Fundamentals of Power Semiconductor Devices
05 Sep 2008-
TL;DR: In this article, the fundamental physics of power semiconductor devices are discussed and an analytical model for explaining the operation of all power Semiconductor devices is presented, focusing on silicon devices.
Abstract: Fundamentals of Power Semiconductor Devices provides an in-depth treatment of the physics of operation of power semiconductor devices that are commonly used by the power electronics industry. Analytical models for explaining the operation of all power semiconductor devices are shown. The treatment focuses on silicon devicesandincludes the unique attributes and design requirements for emerging silicon carbide devices.
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TL;DR: The state of the art in condition monitoring for power electronics can be found in this paper, where the authors present a review of the current state-of-the-art in power electronics condition monitoring.
Abstract: Condition monitoring (CM) has already been proven to be a cost effective means of enhancing reliability and improving customer service in power equipment, such as transformers and rotating electrical machinery. CM for power semiconductor devices in power electronic converters is at a more embryonic stage; however, as progress is made in understanding semiconductor device failure modes, appropriate sensor technologies, and signal processing techniques, this situation will rapidly improve. This technical review is carried out with the aim of describing the current state of the art in CM research for power electronics. Reliability models for power electronics, including dominant failure mechanisms of devices are described first. This is followed by a description of recently proposed CM techniques. The benefits and limitations of these techniques are then discussed. It is intended that this review will provide the basis for future developments in power electronics CM.
820 citations
Cites background from "Fundamentals of Power Semiconductor..."
...42 when T ≥ 200 K [106], COX is the oxide capacitance (in farad per centimeter square), and W and L are the channel width and length, respectively (in centimeter)....
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Sandia National Laboratories1, University of California, Davis2, Massachusetts Institute of Technology3, Cornell University4, United States Army Research Laboratory5, Ohio State University6, University of California, Santa Barbara7, Boston University8, North Carolina State University9, Purdue University10, Georgia Institute of Technology11, Michigan State University12, Air Force Research Laboratory13, National Institute of Information and Communications Technology14, University of South Carolina15, United States Naval Research Laboratory16, Arizona State University17, University of Illinois at Urbana–Champaign18, Vanderbilt University19
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Abstract: J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons
785 citations
Cites background from "Fundamentals of Power Semiconductor..."
...Since the breakdown voltage of a semiconductor depletion region scales as C 2 E ,[224] and Ec scales as the 2nd power of EG,([225]) VBR of a semiconductor switch scales as the 4th power of EG....
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TL;DR: In this article, the features and present status of SiC power devices are briefly described, and several important aspects of the material science and device physics of the SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed.
Abstract: Power semiconductor devices are key components in power conversion systems. Silicon carbide (SiC) has received increasing attention as a wide-bandgap semiconductor suitable for high-voltage and low-loss power devices. Through recent progress in the crystal growth and process technology of SiC, the production of medium-voltage (600?1700 V) SiC Schottky barrier diodes (SBDs) and power metal?oxide?semiconductor field-effect transistors (MOSFETs) has started. However, basic understanding of the material properties, defect electronics, and the reliability of SiC devices is still poor. In this review paper, the features and present status of SiC power devices are briefly described. Then, several important aspects of the material science and device physics of SiC, such as impurity doping, extended and point defects, and the impact of such defects on device performance and reliability, are reviewed. Fundamental issues regarding SiC SBDs and power MOSFETs are also discussed.
750 citations
Book•
23 Sep 2014
TL;DR: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications is provided in this paper. But the authors focus on the SiC Schottky barrier diodes (SBDs) and do not provide an in-depth reference for scientists and engineers working in this field.
Abstract: A comprehensive introduction and up-to-date reference to SiC power semiconductor devices covering topics from material properties to applications Based on a number of breakthroughs in SiC material science and fabrication technology in the 1980s and 1990s, the first SiC Schottky barrier diodes (SBDs) were released as commercial products in 2001. The SiC SBD market has grown significantly since that time, and SBDs are now used in a variety of power systems, particularly switch-mode power supplies and motor controls. SiC power MOSFETs entered commercial production in 2011, providing rugged, high-efficiency switches for high-frequency power systems. In this wide-ranging book, the authors draw on their considerable experience to present both an introduction to SiC materials, devices, and applications and an in-depth reference for scientists and engineers working in this fast-moving field . Fundamentals of Silicon Carbide Technology covers basic properties of SiC materials, processing technology, theory and analysis of practical devices, and an overview of the most important systems applications. Specifically included are:
658 citations
TL;DR: In this article, the authors discuss the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices and present challenges and innovative solutions to creating enhancement-mode power switches.
Abstract: Recent success with the fabrication of high-performance GaN-on-Si high-voltage HFETs has made this technology a contender for power electronic applications. This paper discusses the properties of GaN that make it an attractive alternative to established silicon and emerging SiC power devices. Progress in development of vertical power devices from bulk GaN is reviewed followed by analysis of the prospects for GaN-on-Si HFET structures. Challenges and innovative solutions to creating enhancement-mode power switches are reviewed.
466 citations
References
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01 Jan 1987
TL;DR: In this article, the authors introduce the concept of field effect transistors in the context of rectifier concepts and introduce a new Rectifier concept called Field Effect Transistor (FET) this article.
Abstract: Carrier Transport Physics Breakdown Voltage Power Junction Field-Effect Transistors Power Field-Controlled Diodes Power Metal-Oxide-Semiconductor Field Effect Transistors Power MOS-Bipolar Devices New Rectifier Concepts Synopsis References Index
783 citations
TL;DR: In this paper, the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes are described.
Abstract: The authors describe the fabrication and characteristics of the first high-voltage (400-V) silicon-carbide (6H-SiC) Schottky barrier diodes. Measurements of the forward I-V characteristics of these diodes demonstrate a low forward voltage drop of approximately 1.1 V at an on-state current density of 100 A/cm/sup 2/ for a temperature range of 25 to 200 degrees C. The reverse I-V characteristics of these devices exhibit a sharp breakdown, with breakdown voltages exceeding 400 V at 25 degrees C. In addition, these diodes are shown to have superior reverse recovery characteristics when compared with high-speed silicon P-i-N rectifiers. >
168 citations
TL;DR: In this paper, hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique.
Abstract: Hole impact ionization coefficients have been accurately measured as a function of temperature in both 4H and 6H-SiC using the pulsed electron beam induced current (P-EBIC) technique. For Chynoweth's equation ( α=a e − b / E ), our measurements gave an a p value of (2.6±0.12)×10 6 /cm and a b p value of (1.5±0.01)×10 7 V/cm for 6H-SiC at room temperature while the values of a p and b p for 4H-SiC were found to be (3.25±0.3)×10 6 /cm and (1.71±0.04)×10 7 V/cm, respectively, at room temperature. The coefficient a p was found to decrease with increasing temperature for both polytypes while the coefficient b p remained constant. Based upon this data, the breakdown voltage of the 4H and 6H-SiC devices is predicted to increase with temperature which is an important desirable characteristic for power devices.
136 citations
01 Apr 1988
TL;DR: A review of the evolution of a power transistor technology based on MOS gate control is provided in this article, which offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits.
Abstract: A review of the innovations that have led to the evolution of a power transistor technology based on MOS gate control is provided. This technology offers the advantage of very high input impedance, which allows the control of the devices using low-cost integrated circuits. The physics of operation of the two types of devices in this category, power MOSFETs and power MOS-bipolar devices, are described. Trends in process technology and device ratings are analyzed. Based on the superior performance of these devices, it is projected that they will completely displace the power bipolar transistor in the future. >
75 citations