GaAs, AlAs, and AlxGa1−xAs: Material parameters for use in research and device applications
TL;DR: In this article, a review of the properties of the Al x Ga1−x As/GaAs heterostructure system is presented, which can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4), lattice dynamic properties, (5) lattices thermal properties,(6) electronic-band structure, (7) external perturbation effects on the bandgap energy, (8) effective mass, (9) deformation potential, (10) static and
Abstract: The Al x Ga1−x As/GaAs heterostructure system is potentially useful material for high‐speed digital, high‐frequency microwave, and electro‐optic device applications Even though the basic Al x Ga1−x As/GaAs heterostructure concepts are understood at this time, some practical device parameters in this system have been hampered by a lack of definite knowledge of many material parameters Recently, Blakemore has presented numerical and graphical information about many of the physical and electronic properties of GaAs [J S Blakemore, J Appl Phys 5 3, R123 (1982)] The purpose of this review is (i) to obtain and clarify all the various material parameters of Al x Ga1−x As alloy from a systematic point of view, and (ii) to present key properties of the material parameters for a variety of research works and device applications A complete set of material parameters are considered in this review for GaAs, AlAs, and Al x Ga1−x As alloys The model used is based on an interpolation scheme and, therefore, necessitates known values of the parameters for the related binaries (GaAs and AlAs) The material parameters and properties considered in the present review can be classified into sixteen groups: (1) lattice constant and crystal density, (2) melting point, (3) thermal expansion coefficient, (4) lattice dynamic properties, (5) lattice thermal properties, (6) electronic‐band structure, (7) external perturbation effects on the band‐gap energy, (8) effective mass, (9) deformation potential, (10) static and high‐frequency dielectric constants, (11) magnetic susceptibility, (12) piezoelectric constant, (13) Frohlich coupling parameter, (14) electron transport properties, (15) optical properties, and (16) photoelastic properties Of particular interest is the deviation of material parameters from linearity with respect to the AlAs mole fraction x Some material parameters, such as lattice constant, crystal density, thermal expansion coefficient, dielectric constant, and elastic constant, obey Vegard’s rule well Other parameters, eg, electronic‐band energy, lattice vibration (phonon) energy, Debye temperature, and impurity ionization energy, exhibit quadratic dependence upon the AlAs mole fraction However, some kinds of the material parameters, eg, lattice thermal conductivity, exhibit very strong nonlinearity with respect to x, which arises from the effects of alloy disorder It is found that the present model provides generally acceptable parameters in good agreement with the existing experimental data A detailed discussion is also given of the acceptability of such interpolated parameters from an aspect of solid‐state physics Key properties of the material parameters for use in research work and a variety of Al x Ga1−x As/GaAs device applications are also discussed in detail
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TL;DR: In this article, the authors describe the properties of Si-inversion layers in GaAs-AlGaAs Heterostructures and the Quantum Hall Effect in strong magnetic fields.
Abstract: I. Introduction (Preface, Nanostructures in Si Inversion Layers, Nanostructures in GaAs-AlGaAs Heterostructures, Basic Properties).
II. Diffusive and Quasi-Ballistic Transport (Classical Size Effects, Weak Localization, Conductance Fluctuations, Aharonov-Bohm Effect, Electron-Electron Interactions, Quantum Size Effects, Periodic Potential).
III. Ballistic Transport (Conduction as a Transmission Problem, Quantum Point Contacts, Coherent Electron Focusing, Collimation, Junction Scattering, Tunneling).
IV. Adiabatic Transport (Edge Channels and the Quantum Hall Effect, Selective Population and Detection of Edge Channels, Fractional Quantum Hall Effect, Aharonov-Bohm Effect in Strong Magnetic Fields, Magnetically Induced Band Structure).
937 citations
TL;DR: In this paper, the bandgap of InN was revised from 1.9 eV to a much narrower value of 0.64 eV, which is the smallest bandgap known to date.
Abstract: Wide-band-gap GaN and Ga-rich InGaN alloys, with energy gaps covering the blue and near-ultraviolet parts of the electromagnetic spectrum, are one group of the dominant materials for solid state lighting and lasing technologies and consequently, have been studied very well. Much less effort has been devoted to InN and In-rich InGaN alloys. A major breakthrough in 2002, stemming from much improved quality of InN films grown using molecular beam epitaxy, resulted in the bandgap of InN being revised from 1.9 eV to a much narrower value of 0.64 eV. This finding triggered a worldwide research thrust into the area of narrow-band-gap group-III nitrides. The low value of the InN bandgap provides a basis for a consistent description of the electronic structure of InGaN and InAlN alloys with all compositions. It extends the fundamental bandgap of the group III-nitride alloy system over a wider spectral region, ranging from the near infrared at ∼1.9 μm (0.64 eV for InN) to the ultraviolet at ∼0.36 μm (3.4 eV for GaN...
871 citations
TL;DR: In this article, the authors present a self-contained account of the three transport regimes in semiconductor nanostructures, namely ballistic transport, diffusive transport and ballistic transport.
Abstract: Publisher Summary Quantum transport is conveniently studied in a two-dimensional electron gas (2DEG) because of the combination of a large Fermi wavelength and large mean free path. Semiconductor nanostructures are unique in offering the possibility of studying quantum transport in an artificial potential landscape. This is the regime of ballistic transport in which scattering with impurities are neglected. The chapter presents a self-contained account of these three novel transport regimes in semiconductor nanostructures. The study of quantum transport in semiconductor nanostructures is motivated by more than scientific interest. The fabrication of nanostructures relies on sophisticated crystal growth and lithographic techniques that exist because of the industrial effort toward the miniaturization of transistors. Conventional transistors operate in the regime of classical diffusive transport, which breaks down on short length scales. The discovery of novel transport regimes in semiconductor nanostructures provides options for the development of innovative future devices.
863 citations
TL;DR: In this article, the authors showed that near the band edge of a one-dimensional photonic band gap structure the photon group velocity approaches zero, which implies an exceedingly long optical path length in the structure.
Abstract: Near the band edge of a one‐dimensional photonic band gap structure the photon group velocity approaches zero. This effect implies an exceedingly long optical path length in the structure. If an active medium is present, the optical path length increase near the photonic band edge can lead to a better than fourfold enhancement of gain. This new effect has important applications to vertical‐cavity surface‐emitting lasers.
605 citations
IBM1
TL;DR: In this article, Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, AlP, InAs, GaP) and some of their alloys were performed at two lattice temperatures (77 and 300 K).
Abstract: Monte Carlo simulations of electron transport in seven semiconductors of the diamond and zinc-blende structure (Ge, Si, GaAs, InP, AlAs, InAs, GaP) and some of their alloys (Al/sub x/Ga/sub 1-x/As, In/sub x/Ga/sub 1-x/As, Ga/sub x/In/sub 1-x/P) and hole transport in Si were performed at two lattice temperatures (77 and 300 K). The model uses band structures obtained from local empirical pseudopotential calculations and particle-lattice scattering rates computed from the Fermi golden rule to account for band-structure effects. Intervalley deformation potentials significantly lower than those which have been previously reported are needed to reproduce available experimental data. This is attributed to the more complicated band structures, particularly around the L- and X-symmetry points in most materials. Satisfactory agreement is obtained between Monte Carlo results and some experiments. >
572 citations
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01 Jan 1985
TL;DR: In this paper, the physical properties of crystals systematically in tensor notation are presented, presenting tensor properties in terms of their common mathematical basis and the thermodynamic relations between them.
Abstract: First published in 1957, this classic study has been reissued in a paperback version that includes an additional chapter bringing the material up to date. The author formulates the physical properties of crystals systematically in tensor notation, presenting tensor properties in terms of their common mathematical basis and the thermodynamic relations between them. The mathematical groundwork is laid in a discussion of tensors of the first and second ranks. Tensors of higher ranks and matrix methods are then introduced as natural developments of the theory. A similar pattern is followed in discussing thermodynamic and optical aspects.
8,520 citations
2,831 citations
TL;DR: In this article, a single effectiveoscillator fit was used to analyze refractive-index dispersion data below the interband absorption edge in more than 100 widely different solids and liquids.
Abstract: Refractive-index dispersion data below the interband absorption edge in more than 100 widely different solids and liquids are analyzed using a single-effective-oscillator fit of the form ${n}^{2}\ensuremath{-}1=\frac{{E}_{d}{E}_{0}}{({E}_{0}^{2}\ensuremath{-}{\ensuremath{\hbar}}^{2}{\ensuremath{\omega}}^{2})}$, where $\ensuremath{\hbar}\ensuremath{\omega}$ is the photon energy, ${E}_{0}$ is the single oscillator energy, and ${E}_{d}$ is the dispersion energy. The parameter ${E}_{d}$, which is a measure of the strength of interband optical transitions, is found to obey the simple empirical relationship ${E}_{d}=\ensuremath{\beta}{N}_{c}{Z}_{a}{N}_{e}$, where ${N}_{c}$ is the coordination number of the cation nearest neighbor to the anion, ${Z}_{a}$ is the formal chemical valency of the anion, ${N}_{e}$ is the effective number of valence electrons per anion (usually ${N}_{e}=8$), and $\ensuremath{\beta}$ is essentially two-valued, taking on the "ionic" value ${\ensuremath{\beta}}_{i}=0.26\ifmmode\pm\else\textpm\fi{}0.04$ eV for halides and most oxides, and the "covalent" value ${\ensuremath{\beta}}_{c}=0.37\ifmmode\pm\else\textpm\fi{}0.05$ eV for the tetrahedrally bonded ${A}^{N}{B}^{8\ensuremath{-}N}$ zinc-blende- and diamond-type structures, as well as for scheelite-structure oxides and some iodates and carbonates. Wurtzite-structure crystals form a transitional group between ionic and covalent crystal classes. Experimentally, it is also found that ${E}_{d}$ does not depend significantly on either the bandgap or the volume density of valence electrons. The experimental results are related to the fundamental ${\ensuremath{\epsilon}}_{2}$ spectrum via appropriately defined moment integrals. It is found, using relationships between moment integrals, that for a particularly simple choice of a model ${\ensuremath{\epsilon}}_{2}$ spectrum, viz., constant optical-frequency conductivity with high- and low-frequency cutoffs, the bandgap parameter ${E}_{a}$ in the high-frequency sum rule introduced by Hopfield provides the connection between the single-oscillator parameters (${E}_{0},{E}_{d}$) and the Phillips static-dielectric-constant parameters (${E}_{g},\ensuremath{\hbar}{\ensuremath{\omega}}_{p}$), i.e., ${(\ensuremath{\hbar}{\ensuremath{\omega}}_{p})}^{2}={E}_{a}{E}_{d} \mathrm{and} {E}_{g}^{2}={E}_{a}{E}_{0}$. Finally, it is suggested that the observed dependence of ${E}_{d}$ on coordination number and valency implies that an understanding of refractive-index behavior may lie in a localized molecular theory of optical transitions.
2,346 citations
1,814 citations