GaAs-based room-temperature continuous-wave 1.59 {mu}m GaInNAsSb single-quantum-well laser diode grown by molecular-beam epitaxy
TL;DR: The photoluminescence properties of 1.5μm range GaInNAsSb∕GaNAs QWs are quite comparable to the 1.3μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs.
Abstract: Starting from the growth of high-quality 1.3μmGaInNAs∕GaAs quantum well (QW), the QW emission wavelength has been extended up to 1.55μm by a combination of lowering growth rate, using GaNAs barriers and incorporating some amount of Sb. The photoluminescence properties of 1.5μm range GaInNAsSb∕GaNAs QWs are quite comparable to the 1.3μm QWs, revealing positive effect of Sb on improving the optical quality of the QWs. A 1.59μm lasing of a GaInNAsSb∕GaNAs single-QW laser diode is obtained under continuous current injection at room temperature. The threshold current density is 2.6kA∕cm2 with as-cleaved facet mirrors.
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TL;DR: In this paper, the molecular beam epitaxial growth and characteristics of 1.45μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼30meV and high intensity at room temperature.
Abstract: The molecular beam epitaxial growth and characteristics of 1.45μm metamorphic InAs quantum dot tunnel injection lasers on GaAs have been studied. Under optimized growth conditions, the quantum dots exhibit photoluminescence linewidths ∼30meV and high intensity at room temperature. The lasers are characterized by ultralow threshold current (63A∕cm2), large frequency response (f−3dB=8GHz), and near-zero α parameter and chirp.
69 citations
TL;DR: In this article, the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells is discussed and the growth challenges of GaInNAsSb alloys are discussed.
Abstract: In the past few years, GaInNAsSb has been found to be a potentially superior material to both GaInNAs and InGaAsP for communications wavelength laser applications. It has been observed that due to the surfactant role of antimony during epitaxy, higher quality material can be grown over the entire 1.2 – 1.6 µm range on GaAs substrates. In addition, it has been discovered that antimony in GaInNAsSb also works as a constituent that significantly modifies the valence band. These findings motivated a systematic study of GaInNAsSb alloys with widely varying compositions. Our recent progress in growth and materials development of GaInNAsSb alloys and our fabrication of 1.5 – 1.6 µm lasers are discussed in this paper. We review our recent studies of the conduction band offset in (Ga,In) (N,As,Sb)/GaAs quantum wells and discuss the growth challenges of GaInNAsSb alloys. Finally, we report record setting long wavelength edge emitting lasers and the first monolithic VCSELs operating at 1.5 µm based on GaInNAsSb QWs grown on GaAs. Successful development of GaInNAsSb alloys for lasers has led to a much broader range of potential applications for this material including: solar cells, electroabsorption modulators, saturable absorbers and far infrared optoelectronic devices and these are also briefly discussed in this paper.
68 citations
TL;DR: In this article, the authors demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy.
Abstract: We demonstrate the 1.58 mu m emission at room temperature from a metamorphic In0.6Ga0.4As quantum well laser grown on GaAs by molecular beam epitaxy. The large lattice mismatch was accommodated through growth of a linearly graded buffer layer to create a high quality virtual In0.32Ga0.68As substrate. Careful growth optimization ensured good optical and structural qualities. For a 1250x50 mu m(2) broad area laser, a minimum threshold current density of 490 A/cm(2) was achieved under pulsed operation. This result indicates that metamorphic InGaAs quantum wells can be an alternative approach for 1.55 mu m GaAs-based lasers. (C) 2007 American Institute of Physics.
61 citations
TL;DR: In this paper, a novel method of in situ antimony mass spectrometry is introduced which permits flux monitoring in the presence of large arsenic background pressures, showing that the N 2 /Ar plasma approach has benefits for the material quality, as well as providing efficient flux control.
31 citations
TL;DR: In this article, the authors reported molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence.
Abstract: We report molecular beam epitaxial growth and characterization of dilute nitride InAsN:Sb. X-ray diffraction, energy dispersive x-ray spectrometry, and electron probe microanalysis revealed that nitrogen incorporation is significantly enhanced by introduction of Sb flux during growth, together with a dramatic improvement of the photoluminescence. These observations were attributed to the surfactant effect of Sb which suppresses the surface diffusion length of nitrogen and improves the homogeneity of the alloy. Sb incorporation is enhanced with the presence of nitrogen which was associated with the surface kinetic of growth. InAsN:Sb∕InAs p-i-n light emitting diodes operating near 4.0μm were also realized.
29 citations
References
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TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Abstract: We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.
1,384 citations
Book•
08 Sep 1995
TL;DR: In this article, the authors discuss the propagation of light propagation in various media, including waveguide couplers and coupled-mode theory, as well as direct modulation of Semiconductor Lasers.
Abstract: FUNDAMENTALS. Basic Semiconductor Electronics. Basic Quantum Mechanics. Theory of Electronic Band Structures in Semiconductors. Electromagnetics. PROPAGATION OF LIGHT. Light Propagation in Various Media. Optical Waveguide Theory. Waveguide Couplers and Coupled--Mode Theory. GENERATION OF LIGHT. Optical Processes in Semiconductors. Semiconductor Lasers. MODULATION OF LIGHT. Direct Modulation of Semiconductor Lasers. Electrooptic Acoustooptic Modulators. Electroabsorption Modulators. DETECTION OF LIGHT. Photodetectors. Appendices. Index.
1,377 citations
TL;DR: In this paper, metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm2 (for L=2000 μm) and 75 A/m2, respectively.
Abstract: Metalorganic chemical vapor deposition-grown In0.4Ga0.6As0.995N0.005 quantum well (QW) lasers have been realized, at an emission wavelength of 1.295 μm, with threshold and transparency current densities as low as 211 A/cm2 (for L=2000 μm) and 75 A/cm2, respectively. The utilization of a tensile-strained GaAs0.67P0.33 buffer layer and GaAs0.85P0.15 barrier layers allows a highly-compressively-strained In0.4Ga0.6As0.995N0.005 QW to be grown on a high-Al-content lower cladding layer, resulting in devices with high current injection efficiency (ηinj∼97%).
155 citations
TL;DR: In this article, the first report of room-temperature laser emission in the 1.5 /spl mu/m range based on GaAs was given for a ridge waveguide laser diode at a wavelength of 1517 nm.
Abstract: GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 /spl mu/m range based on GaAs.
147 citations
TL;DR: In this article, the effect of adding Sb during growth of InGaAsN/GaAs QWs was studied, and it was shown that Sb suppresses the three-dimensional growth and improves the interface of the QWs.
Abstract: InGaAsNSb/GaAs quantum wells (QWs) were grown by solid-source molecular-beam epitaxy using a N2 radio frequency plasma source. The effect of adding Sb during growth of InGaAsN/GaAs QWs was studied. X-ray diffraction, reflection high-energy electron diffraction and transmission electron microscopy studies indicate that Sb suppresses the three-dimensional growth and improves the interface of the QWs. X-ray diffraction and secondary ion mass spectroscopy analysis show that Sb gets incorporated into the quantum well, which becomes a quinternary compound that was previously unexplored. The introduction of Sb during growth of InGaAsN/GaAs QWs significantly enhances the optical properties of the QWs. 1.53 μm room-temperature photoluminescence was obtained from InGaAsNSb/GaAs QWs, which demonstrates the potential of fabricating 1.55 μm InGaAsNSb/GaAs QW lasers for long-haul applications.
126 citations