GaInAsN/GaAs laser diodes operating at 1.52 [micro sign]m
TL;DR: In this article, the first report of room-temperature laser emission in the 1.5 /spl mu/m range based on GaAs was given for a ridge waveguide laser diode at a wavelength of 1517 nm.
Abstract: GaInAsN/GaAs double quantum well (DQW) lasers have been grown by solid source molecular beam epitaxy (MBE). Room-temperature pulsed operation is demonstrated for a ridge waveguide laser diode at a wavelength of 1517 nm. This is the first report of room-temperature laser emission in the 1.5 /spl mu/m range based on GaAs.
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TL;DR: In this article, the authors review both the materials challenges and progress in growth of the metastable GaInNAs alloys required to reach the 1.3-1.55 μm communication wavelengths and the challenges and advances in device design for both vertical-cavity surface-emitting lasers and higher power edge-EMitting lasers.
Abstract: Research to realize long-wavelength, GaInNAs quantum well lasers has been intense in the past three years. The results have been very promising considering the relative immaturity and challenges of this new materials system. This paper reviews both the materials challenges and progress in growth of the metastable GaInNAs alloys required to reach the 1.3–1.55 μm communication wavelengths and the challenges and progress in device design for both vertical-cavity surface-emitting lasers and higher power edge-emitting lasers.
208 citations
TL;DR: A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective in this article.
Abstract: A brief review on the present knowledge of the electronic properties of the Ga(In)NAs ternary and quaternary alloys is given mainly from an experimental perspective. The discussion is focused on Ga(In)NAs with low N composition (< 10 %), where a large amount of experimental work has been done. Important fundamental electronic properties of the material system are analyzed with the emphasis on the nature of the giant band gap bowing in the alloy and nitrogen-induced modifications of the electronic structure of the conduction band. The current knowledge of the key material parameters, relevant for the device applications, such as electron effective mass, recombination processes and band alignment in Ga(In)NAs/GaAs heterostructures, is also reviewed.
166 citations
TL;DR: In this paper, the authors used positron-annihilation measurements and nuclear reaction analysis [utilizing the 14Nd,p)15N and 14N(d,He)12C reactions] in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the defects in as-grown Ga(In)NAs materials.
Abstract: Positron-annihilation measurements and nuclear reaction analysis [utilizing the 14N(d,p)15N and 14N(d,He)12C reactions] in conjunction with Rutherford backscattering spectrometry in the channeling geometry were used to study the defects in as-grown Ga(In)NAs materials grown by molecular beam epitaxy using a radio-frequency plasma nitrogen source. Our data unambiguously show the existence of vacancy-type defects, which we attribute to Ga vacancies, and nitrogen interstitials in the as-grown nitride–arsenide epilayers. These point defects, we believe, are responsible for the low luminescence efficiency of as-grown Ga(In)NAs materials and the enhanced diffusion process during annealing.
163 citations
TL;DR: In this article, the effects of spin-orbit-splitting energy on the dominant Auger recombination loss mechanism were investigated for high-mismatched semiconductor alloys such as GaInNAs and GaBiAs.
Abstract: Highly mismatched semiconductor alloys such as GaNxAs1 − x and GaBixAs1 − x have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin-orbit-splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial progress made in the demonstration of actual GaInNAs telecommunication (telecom) lasers. These have characteristics comparable to conventional InP-based devices. This includes a strong Auger contribution to the threshold current. We show, however, that the large spin-orbit-splitting energy in GaBiAs and GaBiNAs could lead to the suppression of the dominant Auger recombination loss mechanism, finally opening the route to efficient temperature-stable telecomm and longer wavelength lasers with significantly reduced power consumption.
156 citations
TL;DR: In this paper, the electronic structure of GaNAs and GaBiAs has been reviewed and their consequences for ideal lasers have been discussed, and substantial progress has been made in the demonstration of actual GaInNAs telecomm lasers.
Abstract: Highly mismatched semiconductor alloys such as GaNAs and GaBiAs have several novel electronic properties, including a rapid reduction in energy gap with increasing x and also, for GaBiAs, a strong increase in spin orbit- splitting energy with increasing Bi composition. We review here the electronic structure of such alloys and their consequences for ideal lasers. We then describe the substantial progress made in the demonstration of actual GaInNAs telecomm lasers. These have characteristics comparable to conventional InP-based devices. This includes a strong Auger contribution to the threshold current. We show, however, that the large spin-orbit-splitting energy in GaBiAs and GaBiNAs could lead to the suppression of the dominant Auger recombination loss mechanism, finally opening the route to efficient temperature-stable telecomm and longer wavelength lasers with significantly reduced power consumption.
147 citations
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TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Abstract: We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.
1,384 citations
TL;DR: In this paper, a 1.3/spl mu/m continuous wave lasing operation was demonstrated in a GaInNAs quantum-well laser at room temperature, which was achieved by increasing the nitrogen content (up to 1%) in the quantum layer.
Abstract: A 1.3-/spl mu/m continuous wave lasing operation is demonstrated, for the first time, in a GaInNAs quantum-well laser at room temperature. This lasing performance is achieved by increasing the nitrogen content (up to 1%) in GaInNAs quantum layer. It is thus confirmed that this type of laser is suitable for use as a light source for optical fiber communications.
214 citations
TL;DR: In this article, the authors applied optimized low-temperature metal organic vapour phase epitaxy (MOVPE) using the group V sources 1,1-dimethylhydrazine (UDMHy) in combination with tertiarybutylarsine (TBAs) to achieve record low threshold current densities of 0.18 and 0.16 W/A per facet, respectively, for 800 µm long broad area lasers emitting at 1.28 and 1.38 µm, respectively.
Abstract: (GaIn)(NAs)/GaAs single quantum well (SQW) broad area lasers with emission wavelengths at 1.28 and 1.38 µm at room temperature on GaAs substrates have been realised by applying optimised low-temperature metal organic vapour phase epitaxy (MOVPE) using the group V sources 1,1-dimethylhydrazine (UDMHy) in combination with tertiarybutylarsine (TBAs). Record-low threshold current densities of 0.8 and 2.2 kA/cm2, together with high differential efficiencies of 0.18 and 0.16 W/A per facet, are obtained for 800 µm long broad area lasers emitting at 1.28 and 1.38 µm, respectively.
168 citations
TL;DR: In this paper, the authors reported room temperature, continuous-wave operation at 13 /spl mu/m for InGaAsN triple quantum well lasers, with a slope efficiency of 059 W/A (output per two facets).
Abstract: Room temperature, continuous-wave operation at 13 /spl mu/m is reported for InGaAsN triple quantum well lasers The layers were grown by MBE using an RF-coupled plasma source for nitrogen Large broad area lasers exhibit very low threshold current density down to 680 A/cm/sup 2/ and a slope efficiency of 059 W/A (output per two facets) Maximum output powers of 24 and 4 W are reached at 10/spl deg/C under CW and pulsed operation, respectively These values are a significant improvement over those previously published for lasers in the InGaAsN material system
90 citations
TL;DR: In this paper, a double quantum-well ridge stripe laser with different In contents (37% and 39%) grown by metal-organic chemical vapor deposition is demonstrated, with In content of 37% emitting at 1.294 /spl mu/m, and a low threshold current density of 1.1.0 kA/cm/sup 2/ at 20/spl deg/C and a high characteristic temperature of 148 K in the temperature range of
Abstract: 1.3-/spl mu/m-range highly strained GaInNAs-GaAs double quantum-well ridge stripe lasers with different In contents (37% and 39%) grown by metal-organic chemical vapor deposition are demonstrated. The GaInNAs laser with In content of 37% emitting at 1.294 /spl mu/m exhibited both a low threshold current density of 1.0 kA/cm/sup 2/ at 20/spl deg/C and a high characteristic temperature of 148 K in the temperature range of 20/spl deg/C-80/spl deg/C.
63 citations