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Journal Articleโ€ขDOIโ€ข

GaInNAs: a novel material for long-wavelength semiconductor lasers

01 Jun 1997-IEEE Journal of Selected Topics in Quantum Electronics (IEEE)-Vol. 3, Iss: 3, pp 719-730
TL;DR: In this paper, the authors used a gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source to grow a light-emitting material with a bandgap energy suitable for longwavelength laser diodes.
Abstract: GaInNAs was proposed and created in 1995 by the authors. It can be grown pseudomorphically on a GaAs substrate and is a light-emitting material having a bandgap energy suitable for long-wavelength laser diodes (1.3-1.55 /spl mu/m and longer wavelengths). By combining GaInNAs with GaAs or other wide-gap materials that can be grown on a GaAs substrate, a type-I band lineup is achieved and, thus, very deep quantum wells can be fabricated, especially in the conduction band. Since the electron overflow from the wells to the barrier layers at high temperatures can he suppressed, the novel material of GaInNAs is very attractive to overcome the poor temperature characteristics of conventional long-wavelength laser diodes used for optical fiber communication systems. GaInNAs with excellent crystallinity was grown by gas-source molecular beam epitaxy in which a nitrogen radical was used as the nitrogen source. GaInNAs was applied in both edge-emitting and vertical-cavity surface-emitting lasers (VCSELs) in the long-wavelength range. In edge-emitting laser diodes, operation under room temperature continuous-wave (CW) conditions with record high temperature performance (T/sub 0/=126 K) was achieved. The optical and physical parameters, such as quantum efficiency and gain constant, are also systematically investigated to confirm the applicability of GaInNAs to laser diodes for optical fiber communications. In a VCSEL, successful lasing action was obtained under room-temperature (RT) CW conditions by photopumping with a low threshold pump intensity and a lasing wavelength of 1.22 /spl mu/m.
Citations
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Journal Articleโ€ขDOIโ€ข
TL;DR: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed in this article, along with the influence of process-induced or grown-in defects and impurities on the device physics.
Abstract: The role of extended and point defects, and key impurities such as C, O, and H, on the electrical and optical properties of GaN is reviewed. Recent progress in the development of high reliability contacts, thermal processing, dry and wet etching techniques, implantation doping and isolation, and gate insulator technology is detailed. Finally, the performance of GaN-based electronic and photonic devices such as field effect transistors, UV detectors, laser diodes, and light-emitting diodes is covered, along with the influence of process-induced or grown-in defects and impurities on the device physics.

1,693ย citations

Journal Articleโ€ขDOIโ€ข
TL;DR: In this paper, the design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga, sub 0.93}As, sub 1.0 ev bandgap, lattice matched to GaAs was described, and hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm.
Abstract: The design, growth by metal-organic chemical vapor deposition, and processing of an In{sub 0.07}Ga{sub 0.93}As{sub 0.98}N{sub 0.02} solar Al, with 1.0 ev bandgap, lattice matched to GaAs is described. The hole diffusion length in annealed, n-type InGaAsN is 0.6-0.8 pm, and solar cell internal quantum efficiencies > 70% arc obwined. Optical studies indicate that defects or impurities, from InGAsN doping and nitrogen incorporation, limit solar cell performance.

533ย citations

Journal Articleโ€ขDOIโ€ข
TL;DR: In this article, the authors outline the operating principles of SEMS and summarize the capabilities of devices that have been demonstrated so far, focusing on the generation of near-transform-limited sub-picosecond pulses in passively mode-locked SEMS.
Abstract: Surface-emitting semiconductor lasers can make use of external cavities and optical pumping techniques to achieve a combination of high continuous-wave output power and near-diffraction-limited beam quality that is not matched by any other type of semiconductor source. The ready access to the laser mode that the external cavity provides has been exploited for applications such as intra-cavity frequency doubling and passive mode-locking. The purpose of this Topical Review is to outline the operating principles of these versatile lasers and summarize the capabilities of devices that have been demonstrated so far. Particular attention is paid to the generation of near-transform-limited sub-picosecond pulses in passively mode-locked surface-emitting lasers, which are potentially of interest as compact sources of ultrashort pulses at high average power that can be operated readily at repetition rates of many gigahertz.

190ย citations

Journal Articleโ€ขDOIโ€ข
TL;DR: The vertical-external-cavity surface-emitting (VESEM) laser as mentioned in this paper is a diode-pumped solid-state laser with a semiconductor quantum well gain medium.

182ย citations

Journal Articleโ€ขDOIโ€ข
TL;DR: In this paper, the vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well active layers are demonstrated for the first time, with an active wavelength near 1.18 /spl mu/m, threshold current density of 3.1 kA/cm/sup 2, slope efficiency of /spl sim/0.04 W/A, and output power above 5 mW for 45-/spl ยต/m diameter devices.
Abstract: Vertical-cavity surface-emitting laser diodes with GaInNAs-GaAs quantum-well (QW) active layers are demonstrated for the first time. GaInNAs permits the realization of a long-wavelength vertical-cavity laser grown directly on a GaAs substrate. Room-temperature (RT) pulsed operation is achieved, with an active wavelength near 1.18 /spl mu/m, threshold current density of 3.1 kA/cm/sup 2/, slope efficiency of /spl sim/0.04 W/A, and output power above 5 mW for 45-/spl mu/m-diameter devices. Laser oscillation is observed for temperatures at high as 95/spl deg/C.

179ย citations

References
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Journal Articleโ€ขDOIโ€ข
Masahiko Kondow, Kazuhisa Uomi1, Atsuko Niwa1, Takeshi Kitatani1, S. Watahiki1, Yoshiaki Yazawa1ย โ€ข
TL;DR: In this paper, a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics in long-wavelength-range laser diodes is proposed.
Abstract: We propose a novel material, GaInNAs, that can be formed on GaAs to drastically improve the temperature characteristics (T0) in long-wavelength-range laser diodes. The feasibility of our proposal is demonstrated experimentally.

1,384ย citations


"GaInNAs: a novel material for long-..." refers background or methods in this paper

  • ...Fig. 6. Calculated relationship between the and [ 2 ]....

    [...]

  • ...aInNAs was proposed and created in 1995 by the authors [1], [ 2 ]....

    [...]

  • ...In order to drastically improve the high-temperature performance of long-wavelength lasers, we proposed the use of GaInNAs in the active layer [1], [ 2 ]....

    [...]

  • ...We have proposed the application in optoelectronic devices [1], [ 2 ], [8], because it is possible to make devices with much more superior performance than current ones due to the uncommon physical properties of the mixed group-V nitride alloy semiconductors....

    [...]

Bookโ€ข
01 Jun 1973
TL;DR: This article has tried to show how this realm between physics and chemistry can be treated accurately and realistically within the framework of theory.
Abstract: This classic work on the basic chemistry and solid state physics of semiconducting materials is now updated and improved with new chapters on crystalline and amorphous semiconductors. Written by two of the world's pioneering materials scientists in the development of semiconductors, this work offers in a single-volume an authoritative treatment for the learning and understanding of what makes perhaps the world's most important engineered materials actually work. Readers will find: the essential principles of chemical bonding, electron energy bands and their relationship to conductive and semi-conductive material behavior; coverage on elastics and piezoelectric constants, lattice vibrations, charge densities, optical spectra, thermo-chemistry and other key elements of semiconductor behavior and function; and, new chapters on crystalline semiconductor interfaces, amorphous semiconductors and crystalline/amorphous interfaces.

1,070ย citations

Journal Articleโ€ขDOIโ€ข
J. C. Phillips1โ€ข
11 Sep 1970-Science
TL;DR: The most interesting developments in semiconductor physics that have occurred in the last few years and that are anticipated in the next few years appear to lie in the realm between physics and chemistry as mentioned in this paper.
Abstract: Many of the most interesting developments in semiconductor physics that have occurred in the last few years and that are anticipated in the next few years appear to lie in the realm between physics and chemistry. In this article I have tried to show how this realm can be treated accurately and realistically within the framework of theory.

883ย citations

Journal Articleโ€ขDOIโ€ข
TL;DR: In this article, the band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the dielectric method of Van Vechten and the Harrison model, respectively.
Abstract: The band gap energy and band lineup of 15 binary, 42 ternary and 39 quaternary III-V alloy semiconductors composed of (B, Al, Ga, In)(N, P, As, Sb) are calculated by mean of the dielectric method of Van Vechten and the Harrison model, respectively. The alloys including N are predicted to have negative band gap energy in most of the compositional range due to the large electro-negativity of nitrogen atom. Possible material combinations for a lattice-matched doubleheterostructure for blue-light-emitting devices are discussed. The chart presented here will be useful in designing blue-to-ultraviolet light emitters with and without strain in the devices

328ย citations


"GaInNAs: a novel material for long-..." refers background or result in this paper

  • ...This curious behavior agrees with the experimental results [6], [7] and theoretical prediction [ 9 ] which were previously reported by the other research groups....

    [...]

  • ...This phenomenon is explained in terms of the discrepancy in electronegativity among constitutional atoms [ 9 ]....

    [...]

Journal Articleโ€ขDOIโ€ข
TL;DR: In this paper, the authors investigated the temperature characteristics of threshold current, quantum efficiency, and modulation speed of uncooled semiconductor lasers and found that the intrinsic material parameters are similar in magnitude and in temperature dependence if they are normalized to each well.
Abstract: Design considerations for fabricating highly efficient uncooled semiconductor lasers are discussed. The parameters investigated include the temperature characteristics of threshold current, quantum efficiency, and modulation speed. To prevent carrier overflow under high-temperature operation, the electron confinement energy is increased by using the Al/sub x/Ga/sub y/In/sub 1-x-y/As/InP material system instead of the conventional Ga/sub x/In/sub 1-x/As/sub y/P/sub 1-y//InP material system. To reduce the transparency current and the carrier-density-dependent loss due to the intervalence-band absorption, strained-layer quantum wells are chosen as the active layer. Experimentally, 1.3-/spl mu/m compressive-strained five-quantum-well lasers and tensile-strained three-quantum-well lasers were fabricated using a 3-/spl mu/m wide ridge-waveguide laser structure. For both types of lasers, the intrinsic material parameters are found to be similar in magnitude and in temperature dependence if they are normalized to each well. Specifically, the compressive-strained five-quantum-well lasers show excellent extrinsic temperature characteristics, such as small drop of 0.3 dB in differential quantum efficiency when the heat sink temperature changes from 25 to 100/spl deg/C, and a large small-signal modulation bandwidth of 8.6 GHz at 85/spl deg/C. The maximum 3 dB modulation bandwidth was measured to be 19.6 GHz for compressive-strained lasers and 17 GHz for tensile-strained-lasers by an optical modulation technique. The strong carrier confinement also results in a small k-factor (0.25 ns) which indicates the potential for high-speed modulation up to 35 GHz. In spite of the aluminum-containing active layer, no catastrophic optical damage was observed at room temperature up to 218 mW for compressive-strained five-quantum-well lasers and 103 mW for tensile-strained three-quantum-well lasers. For operating the compressive-strained five-quantum-well lasers at 85/spl deg/C with more than 5 mW output power, a mean-time-to-failure (MTTF) of 9.4 years is projected from a preliminary life test. These lasers are highly attractive for uncooled, potentially low-cost applications in the subscriber loop. >

310ย citations