GaInNAs: a novel material for long-wavelength semiconductor lasers
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"GaInNAs: a novel material for long-..." refers background or methods in this paper
...Fig. 6. Calculated relationship between the and [ 2 ]....
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...aInNAs was proposed and created in 1995 by the authors [1], [ 2 ]....
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...In order to drastically improve the high-temperature performance of long-wavelength lasers, we proposed the use of GaInNAs in the active layer [1], [ 2 ]....
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...We have proposed the application in optoelectronic devices [1], [ 2 ], [8], because it is possible to make devices with much more superior performance than current ones due to the uncommon physical properties of the mixed group-V nitride alloy semiconductors....
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"GaInNAs: a novel material for long-..." refers background or result in this paper
...This curious behavior agrees with the experimental results [6], [7] and theoretical prediction [ 9 ] which were previously reported by the other research groups....
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...This phenomenon is explained in terms of the discrepancy in electronegativity among constitutional atoms [ 9 ]....
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