Gallium antisite defect and residual acceptors in undoped GaSb
TL;DR: In this paper, the positron lifetime spectroscopy (PAS) and the coincident Doppler broadening (CDB) technique were combined to identify Ca vacancy (V-Ga) related defects by combining the CDB measurements.
About: This article is published in Physics Letters A.The article was published on 2004-11-15. It has received 29 citations till now. The article focuses on the topics: Positron Lifetime Spectroscopy & Vacancy defect.
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TL;DR: In this paper, the authors applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals.
Abstract: We have applied positron annihilation spectroscopy to study native point defects in Te-doped n-type and nominally undoped p-type GaSb single crystals. The results show that the dominant vacancy defect trapping positrons in bulk GaSb is the gallium monovacancy. The temperature dependence of the average positron lifetime in both p- and n-type GaSb indicates that negative ion type defects with no associated open volume compete with the Ga vacancies. Based on comparison with theoretical predictions, these negative ions are identified as Ga antisites. The concentrations of these negatively charged defects exceed the Ga vacancy concentrations nearly by an order of magnitude. We conclude that the Ga antisite is the native defect responsible for p-type conductivity in GaSb single crystals.
36 citations
TL;DR: In this article, a narrow process window for GaSb nanowire growth was identified and the photoluminescence was found to be highly dependent on the V/III ratio, with an optimal ratio of unity.
Abstract: GaSb nanowires were synthesized on c-plane sapphire substrates by gold-mediated vapor–liquid–solid (VLS) growth using a metalorganic chemical vapor deposition process. A narrow process window for GaSb nanowire growth was identified. Chemical analysis revealed variations in the catalyst composition which were explained in terms of the Au-Ga-Sb ternary phase diagram and suggest that the VLS growth mechanism was responsible for the nanowire growth. The nominally undoped GaSb nanowires were determined to be p-type with resistivity on the order of 0.23 Ω cm. The photoluminescence was found to be highly dependent on the V/III ratio, with an optimal ratio of unity.
34 citations
TL;DR: In this article, the authors present electrical measurements on various grading and doping schemes, yielding a low resistive interface suitable for application in mid-infrared vertical-cavity surface-emitting lasers.
Abstract: Graded interface layers are commonly known to reduce the electrical series resistance of distributed Bragg-reflectors in vertical-cavity surface-emitting lasers in various material systems such as AlAs/GaAs or AlInAs/GaInAs. As these materials can be highly n-doped using silicon, a further decrease of the resistivity is easily achieved. However, for n-type GaSb/AlAsSb distributed Bragg reflectors on GaSb-substrates the free electron density due to doping in graded layers is reduced depending on the aluminum content and therefore optimized structures are hard to design. In this paper, we present electrical measurements on various grading and doping schemes, yielding a low-resistive interface suitable for application in mid-infrared vertical-cavity surface-emitting lasers.
17 citations
TL;DR: In this article, the defect compensation between Be atoms and Ga vacancy atoms was used to suppress the Ga vacancy related emission in un-doped and be-doping GaSb epilayer.
13 citations
Cites background from "Gallium antisite defect and residua..."
...However, the photoluminescence (PL) spectra of un-doped GaSb usually was dominated by defects emission [8]....
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TL;DR: In this article, the authors are grateful for financial support from the State of Bavaria, the German Ministry of Education and Research (BMBF), via the national project HIRT (Grant No. FKZ 13XP5003B).
Abstract: The authors are grateful for financial support from the State of Bavaria, the German Ministry of Education and Research (BMBF) via the national project HIRT (Grant No. FKZ 13XP5003B).
12 citations
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TL;DR: A review of the positron theory in solids and on solid surfaces is given in this article, which consists of three main parts describing the interaction processes, the theory and methods for calculating positron states, and selected recent results of positron studies of condensed matter.
Abstract: Various experimental methods based on positron annihilation have evolved into important tools for researching the structure and properties of condensed matter. In particular, positron techniques are useful for the investigation of defects in solids and for the investigation of solid surfaces. Experimental methods need a comprehensive theory for a deep, quantitative understanding of the results. In the case of positron annihilation, the relevant theory includes models needed to describe the positron states as well as the different interaction processes in matter. In this review the present status of the theory of positrons in solids and on solid surfaces is given. The review consists of three main parts describing (a) the interaction processes, (b) the theory and methods for calculating positron states, and (c) selected recent results of positron studies of condensed matter.
828 citations
Book•
01 Jan 1998
TL;DR: In this paper, Davies et al. presented a method for defect identification using Capacitance Spectroscopy, which can be used to detect defects in Semiconductors at the atomic level by Transmission Electron Microscopy.
Abstract: List of Contributors. Preface. G. Davies, Optical Measurements of Point Defects. P.M. Mooney, Defect Identification Using Capacitance Spectroscopy. M. Stavola, Vibrational Spectroscopy of Light Element Impurities in Semiconductors. P. Schwander, W.D. Rau, C. Kisielowski, M. Gribelyuk, and A. Ourmazd, Defect Processes in Semiconductors Studied at the Atomic Level by Transmission Electron Microscopy. N.D. Jager and E.R. Weber, Scanning Tunneling Microscopy of Defects in Semiconductors. Subject Index. Contents of Volumes in This Series.
249 citations
TL;DR: In this article, the momentum profiles from positron annihilation with core electrons in Al have been observed with a recently developed two-detector Doppler-broadening technique, which is in good agreement with the experimental results beyond twice the Fermi momentum and suggest the absence of strong positron-electron correlation effects in this region.
Abstract: The momentum profiles from positron annihilation with core electrons in Al have been observed with a recently developed two-detector Doppler-broadening technique. Independent-particle-model (IPM) calculations are in good agreement with the experimental results beyond twice the Fermi momentum and suggest the absence of strong positron-electron correlation effects in this region. Comparisons of calculations with properly normalized momentum profiles indicate that high-momentum core contributions may provide information on the nature of vacancy-type defects and self-trapping effects.
197 citations
TL;DR: The physical properties of GaSb are briefly presented and the device implications reviewed in this paper, where a direct gap semiconductor (0.72 eV) capable of being doped either p or n type with good mobilities and it has significant electrooptical potential in the near IR range.
Abstract: The physical properties of GaSb are briefly presented and the device implications reviewed. GaSb is a direct gap semiconductor (0.72 eV) capable of being doped either p or n type with good mobilities and it has significant electro-optical potential in the near IR range. As a substrate, or active layer, GaSb can be employed in conjunction with many semiconductors such as (AlGa)Sb or In(AsSb) and has interesting heterojunction potential for detectors and lasers and quantum well structures.
184 citations