Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence
TL;DR: In this article, annealing studies were performed to study undoped p-type gallium antimonide materials and a 314 ps positron lifetime component was attributed to Ga vacancy (V-Ga) related defect.
Abstract: Positron lifetime, photoluminescence (PL), and Hall measurements were performed to study undoped p-type gallium antimonide materials. A 314 ps positron lifetime component was attributed to Ga vacancy (V-Ga) related defect. Isochronal annealing studies showed at 300 degreesC annealing, the 314 ps positron lifetime component and the two observed PL signals (777 and 797 meV) disappeared, which gave clear and strong evidence for their correlation. However, the hole concentration (similar to2x10(17) cm(-3)) was observed to be independent of the annealing temperature. Although the residual acceptor is generally related to the V-Ga defect, at least for cases with annealing temperatures above 300 degreesC, V-Ga is not the acceptor responsible for the p-type conduction. (C) 2002 American Institute of Physics.
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TL;DR: In this paper, the authors investigated the effect of Te doping on the acceptor concentration of a single crystal grown by the liquid encapsulated Czochralski (LEC) method.
Abstract: Te-doped GaSb single crystal grown by the liquid encapsulated Czochralski (LEC) method exhibits a lag of compensating progress and a maximum carrier concentration around 8×1017 cm−3. The reason for this phenomenon has been investigated by a quantity concentration evaluation of the Te donor and native acceptor. The results of glow discharge mass spectrometry (GDMS) and Hall measurement suggest that the acceptor concentration increases with the increase of Te doping concentration, resulting in the enhancement of electrical compensation and free electron concentration reduction. The acceptor concentration variation is further demonstrated by photoluminescence spectra and explained by the principle of Fermi level dependent defect formation energy.
3 citations
TL;DR: In this paper, the surfactant effects of antimony enhances the carbon dopant incorporation into substitutional sites in GaAs and a hole mobility greater than 50 cm 2 /Vǫs for doping levels over 9×10 19 ǫ cm −3 was achieved using a solid CBr 4 source.
2 citations
Dissertation•
01 Jan 2006
1 citations
TL;DR: In this paper, the effects of the dopant densities and activation energies on the ionization densities, the chemical potentials corresponding to each dopant levels, the majority carrier density and the Fermi-energy levels in one-acceptor-level system, highly compensated system and twoacceptor level system are described in detail.
Abstract: In this paper, first, the theoretical description of the effects of the dopant densities and the activation energies on the ionization densities, the chemical potentials corresponding to each dopant levels, the majority carrier densities and the Fermi-energy levels in one-acceptor-level system, highly compensated system and two-acceptor-level system are described in detail. Upon fitting the theoretical to the experimental results obtained by the temperature-dependent Hall effect measurements for three samples of un-doped GaSb, the dopant densities and the activation energies for a system with different dopants are investigated. The obtained results revealed that the dopant activation energy has less (no) effect on the Fermi-energy level and the majority carrier density in the highest temperature regimes. The doping density has also less (no) effect on the Fermi-energy level in the lowest temperature regimes. Finally, fitting of the theoretical to the experimental Hall effect measurements results confirmed the presence of three acceptor and one donor levels dominating the majority carrier densities at different temperature regions in all the samples of un-doped GaSb semiconductor.
1 citations
01 Jan 2019
TL;DR: In this article, recent progress in the optical spectroscopic study of several representative III-V group dilute bismides is overviewed, with a focus on the photoluminescence (PL) and photoreflectance (PR) results especially by improved spectroscopy methods.
Abstract: Dilute bismides have attracted great attention due to their promising optoelectronic applications, of which the optical properties are a major theme experimental studies. In this chapter, recent progress in the optical spectroscopic study of several representative III-V group dilute bismides is overviewed, with a focus on the photoluminescence (PL) and photoreflectance (PR) results especially by improved spectroscopic methods. Typical data from dilute bismides by other spectroscopic techniques of, e.g., Raman scattering, absorption and refractive index, are also briefly reviewed.
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919 citations
TL;DR: The 3-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb is a promising material for high speed electronic and long wavelength photonic devices.
Abstract: Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 155 mu m The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices Consequently, there has been tremendous upthrust in research activities of GaSb-based systems As a matter of fact, this compound has proved to be an interesting material for both basic and applied research At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication This article presents an up to date comprehensive account of research carried out hitherto It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility An overview of the lattice, electronic, transport, optical and device related properties is presented Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication (C) 1997 American Institute of Physics
655 citations
Book•
01 Jan 2003
TL;DR: In this article, the authors compare Positron annihilation with other defect-sensitive techniques, such as defect characterisation in III-V and II-VI compounds, and compare them with other techniques.
Abstract: 1 Introduction.- 2 Experimental Techniques.- 3 Basics of Positron Annihilation in Semiconductors.- 4 Defect Characterization in Elemental Semiconductors.- 5 Defect Characterization in III-V Compounds.- 6 Defect Characterization in II-VI Compounds.- 7 Defect Characterization in Other Compounds.- 8 Applications of Positron Annihilation in Defect Engineering.- 9 Comparison of Positron Annihilation with Other Defect-Sensitive Techniques.- A1 Semiconductor Data.- A2 Trapping Model Equations.- References.
479 citations
TL;DR: The physical properties of GaSb are briefly presented and the device implications reviewed in this paper, where a direct gap semiconductor (0.72 eV) capable of being doped either p or n type with good mobilities and it has significant electrooptical potential in the near IR range.
Abstract: The physical properties of GaSb are briefly presented and the device implications reviewed. GaSb is a direct gap semiconductor (0.72 eV) capable of being doped either p or n type with good mobilities and it has significant electro-optical potential in the near IR range. As a substrate, or active layer, GaSb can be employed in conjunction with many semiconductors such as (AlGa)Sb or In(AsSb) and has interesting heterojunction potential for detectors and lasers and quantum well structures.
184 citations
TL;DR: In this article, an intentionally doped gallium antimonide has been grown by molecular beam epitaxy on gallium arsenide and gallium anti-antimonide, and a strong correlation has been found between the quality of the layers and the degree of excess antimony flux; the best material was obtained with the minimum antimony stable growth at a particular substrate temperature.
Abstract: Unintentionally doped gallium antimonide has been grown by molecular‐beam epitaxy on gallium arsenide and gallium antimonide. Substrate temperatures in the range 480 to 620 °C and antimony to gallium flux ratios from 0.65 : 1 to 6.5 : 1 have been investigated. The deposition conditions have been related to growth morphology and to the electrical and optical properties of the epitaxial films. A strong correlation has been found between the quality of the layers and the degree of excess antimony flux; the best material in terms of both optical and electrical properties was obtained with the minimum antimony stable growth at a particular substrate temperature. All the material exhibited residual p‐type behavior. The lowest hole concentration achieved was 7.8×1015 cm−3 with a corresponding room‐temperature mobility of 950 cm2/V s. The narrowest PL (photoluminescence) features observed were peaks associated with bound exciton transitions with half‐widths of 2–3 meV.
145 citations