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Galvanomagnetic effects in semiconductors
01 Jan 1963-
About: The article was published on 1963-01-01 and is currently open access. It has received 194 citations till now.
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TL;DR: In this paper, the authors provide numerical and graphical information about many physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material, including properties of the material itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage.
Abstract: This review provides numerical and graphical information about many (but by no means all) of the physical and electronic properties of GaAs that are useful to those engaged in experimental research and development on this material. The emphasis is on properties of GaAs itself, and the host of effects associated with the presence of specific impurities and defects is excluded from coverage. The geometry of the sphalerite lattice and of the first Brillouin zone of reciprocal space are used to pave the way for material concerning elastic moduli, speeds of sound, and phonon dispersion curves. A section on thermal properties includes material on the phase diagram and liquidus curve, thermal expansion coefficient as a function of temperature, specific heat and equivalent Debye temperature behavior, and thermal conduction. The discussion of optical properties focusses on dispersion of the dielectric constant from low frequencies [κ0(300)=12.85] through the reststrahlen range to the intrinsic edge, and on the ass...
2,115 citations
TL;DR: In this paper, the authors reviewed the history of studies of the family of Fermi-Dirac integrals, and the relevance of these integrals to transport properties via the Boltzmann transport equation is noted.
Abstract: The history of studies of the family of Fermi-Dirac integrals is briefly reviewed, and the relevance of these integrals to transport properties via the Boltzmann transport equation is noted. The role of the integral (2| π )F 1 2 (η)≡ F 1 2 (η)≡u in relating reduced Fermi energy η to electron density in a “parabolic” band makes it especially important that this member of the family be capable of expression in approximate forms of reasonable accuracy. High precision series forms, and published tabulations, for the various members of the family are noted, and the remainder of the paper deals with approximations that have been proposed for u(η) and for η(u). The former permits deduction of carrier density from Fermi energy, and the latter permits the inverse. Successful expressions for each purpose are described, with graphs of the error so incurred.
323 citations
TL;DR: In this article, a long-lifetime photoconductivity effect was observed in Te−doped Ga1−xAlxAs (0.25≲x≲0.7).
Abstract: A long‐lifetime (τ∼hours, T≲60 °K) photoconductivity effect is observed in Te‐doped Ga1−xAlxAs (0.25≲x≲0.7). Analysis of Hall‐effect data showing a pronounced decrease in the electron mobility upon photoexcitation shows that a donor level is involved. Similar effects are observed in Se‐ and Sn‐doped Ga1−xAlxAs (x=0.3). The magnitude of the effect which is typically of the order of the room‐temperature electron concentration seems to correlate linearly with the concentration of Te, showing that a constant concentration background impurity is not responsible for this effect. A large lattice relaxation is indicated by the large difference between the thermal (0.12 eV) and optical (1.1 eV) ionization energy of the donor level. The potential barrier to electron capture by the donor level is estimated to be 180 meV (x=0.36) from time decay measurements of the photoexcited electron population at low temperatures. Extrapolation to room temperature gives a characteristic decay time of ∼0.5 nsec for the electron concentrations expected in injection lasers.
228 citations
TL;DR: This article reviews the most recent developments in the area of ab initio calculations of carrier mobilities of semiconductors and discusses the extension of the methodology to study spintronics and topological materials and the possibility of incorporating Berry-phase effects and many-body correlations beyond the standard Boltzmann formalism.
Abstract: One of the fundamental properties of semiconductors is their ability to support highly tunable electric currents in the presence of electric fields or carrier concentration gradients. These properties are described by transport coefficients such as electron and hole mobilities. Over the last decades, our understanding of carrier mobilities has largely been shaped by experimental investigations and empirical models. Recently, advances in electronic structure methods for real materials have made it possible to study these properties with predictive accuracy and without resorting to empirical parameters. These new developments are unlocking exciting new opportunities, from exploring carrier transport in quantum matter to in silico designing new semiconductors with tailored transport properties. In this article, we review the most recent developments in the area of ab initio calculations of carrier mobilities of semiconductors. Our aim is threefold: to make this rapidly-growing research area accessible to a broad community of condensed-matter theorists and materials scientists; to identify key challenges that need to be addressed in order to increase the predictive power of these methods; and to identify new opportunities for increasing the impact of these computational methods on the science and technology of advanced materials. The review is organized in three parts. In the first part, we offer a brief historical overview of approaches to the calculation of carrier mobilities, and we establish the conceptual framework underlying modern ab initio approaches. We summarize the Boltzmann theory of carrier transport and we discuss its scope of applicability, merits, and limitations in the broader context of many-body Green's function approaches. We discuss recent implementations of the Boltzmann formalism within the context of density functional theory and many-body perturbation theory calculations, placing an emphasis on the key computational challenges and suggested solutions. In the second part of the article, we review applications of these methods to materials of current interest, from three-dimensional semiconductors to layered and two-dimensional materials. In particular, we discuss in detail recent investigations of classic materials such as silicon, diamond, gallium arsenide, gallium nitride, gallium oxide, and lead halide perovskites as well as low-dimensional semiconductors such as graphene, silicene, phosphorene, molybdenum disulfide, and indium selenide. We also review recent efforts toward high-throughput calculations of carrier transport. In the last part, we identify important classes of materials for which an ab initio study of carrier mobilities is warranted. We discuss the extension of the methodology to study topological quantum matter and materials for spintronics and we comment on the possibility of incorporating Berry-phase effects and many-body correlations beyond the standard Boltzmann formalism.
186 citations
Cites methods from "Galvanomagnetic effects in semicond..."
...Within this approximation, the isotropic and temperature-dependent Hall factor is given by [72]...
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185 citations