Gamma Radiation Detection Response of Pt/PZT/SRO Based Capacitor for Dosimetry Application
01 Oct 2020-IEEE Electron Device Letters (Institute of Electrical and Electronics Engineers (IEEE))-Vol. 41, Iss: 10, pp 1564-1567
TL;DR: In this paper, the effect of gamma radiation on the intrinsic electrical behavior of PZT capacitors was explored in form of the currentvoltage and capacitance-voltage properties.
Abstract: Radiation induced changes in the electrical properties of PbZrTiO3 (PZT) thin films have been studied for dosimetry application. The radiation detection was based on radiation induced changes in the electrical properties under the influence of gamma radiation. Epitaxial heterostructure of ferroelectric PbZr0.52 Ti0.48O3 (001)/SrRuO3 (SRO) were grown on single crystal SrTiO3 (001) substrates by pulsed laser deposition and platinum (Pt) electrode was deposited on top of the PZT film. The maximum capacitance of the heteroepitaxial capacitor devices was $\approx ~25$ pF with a corresponding small leakage current. The effect of gamma ( $\gamma $ -ray) irradiation on the intrinsic electrical behavior of the Lead Zirconate Titanate (PZT) capacitor devices were explored in form of the current–voltage (I–V) and capacitance–voltage (C–V) properties. The PZT devices were exposed to a 60Co Gamma source with 2.8 kGy/h dose rate from 0 kGy to 400 kGy doses. Gamma radiation induced broadening was observed in full width half maxima (FWHM) of the x-ray diffraction (00l) peak with the increasing gamma doses. All devices showed a consistence changes in conductance and capacitance with increasing gamma doses. The results demonstrated linear relationship in electrical response of PZT thin-film capacitors as a function of gamma doses. The device showed significant changes in the values of current and capacitance with the increase in dose up to 400 kGy and are therefore suitable for high-dose dosimetry applications.
Citations
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TL;DR: In this article, Bethe and Morrison present a theory of elementary nuclear theory, which they call the "elementary nuclear theory" (ENTT), based on the concept of the atom.
Abstract: Elementary Nuclear Theory By Prof. Hans A. Bethe and Prof. Philip Morrison. Second edition. Pp. xi + 274. (New York: John Wiley and Sons, Inc.; London: Chapman and Hall, Ltd., 1956.) 50s. net.
308 citations
References
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TL;DR: In this paper, the authors investigated the effect of γ-ray irradiation on pentacene thin films in terms of the change in the crystallinity, and electronic structure as well as chemical states of the film.
Abstract: In this work, γ-ray irradiation effects on pentacene thin films are investigated in terms of the change in the crystallinity, and electronic structure as well as chemical states of the film. The pentacene films are γ-irradiated up to 3 kGy and then characterized using synchrotron X-ray diffraction, near edge X-ray absorption fine structure (NEXAFS) and X-ray photoelectron spectroscopy. We found that γ-ray irradiation creates defects, resulting in a decrease of X-ray diffraction intensity both in the plane normal and in-plane directions. From angle dependent NEXAFS; the transition of C 1s to π* orbital for irradiated samples increases; suggesting that the unoccupied π* states enhance due to defects or radical formation in pentacene thin films. Additionally, the in-plane resistivity shows a decreasing trend of resistance after irradiation. This trend of increase in conductivity is also consistent with C 1s to π transition, which manifests the increase in carrier concentration. Hall effect measurements further confirmed the increase in carrier concentration as a function of dose; however, the mobility of the sample decreases as the dose rate increases due to the defects created. By post-irradiation annealing, the thin film phase diffraction intensity can be recovered. Altogether, the anisotropic studies on pentacene films disclosed that the irradiation leads to defect formation along in-plane and plane normal directions. Overall, these results suggest that pentacene is one of the robust organic electronic materials; whose structure remains mostly intact even after irradiation up to a dose of 3 kGy.
9 citations
"Gamma Radiation Detection Response ..." refers background in this paper
...Gamma ray irradiation on films resulted significant changes in structural and electrical properties of the film [8]....
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TL;DR: In this article, the effects of postannealing in oxygen ambient and forming gas atmosphere (FGA) on the microstructure and chemistry of Pt/Ba0.7Sr0.3TiO3 (BST)/Pt capacitors were investigated by means of transmission electron microscopy.
Abstract: The effects of postannealing in oxygen ambient and forming gas atmosphere (FGA) on the microstructure and chemistry of Pt/Ba0.7Sr0.3TiO3 (BST)/Pt capacitors prepared by chemical solution deposition have been investigated by means of transmission electron microscopy. The as-deposited film layers of the Pt/BST/Pt capacitors show a columnar structure. The postannealing in O-2 leads to a smoothness of the top film-electrode interface. The additional FGA treatment applied to the postannealing capacitors introduces disordered or amorphous regions at both top and bottom interfaces. In these regions, deviation in composition from the stoichiometry occurs with a higher Ti/(Ba + Sr) ratio. These amorphous regions are believed to be responsible for the increase of the leakage current obtained in the FGA-treated capacitors. The thickness of this amorphous interfacial layer can be reduced significantly by a recovery annealing process in air at low temperatures.
8 citations
"Gamma Radiation Detection Response ..." refers background in this paper
...The possibility for pinning of Fermi level close to conduction band at higher gamma doses which lowers the barrier height due to oxygen vacancies at the surface of the film [37]....
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TL;DR: The effects of different low doses of gamma irradiation on polyaniline-zinc oxide composite thin films were studied and the structural and optical properties showed variation will be helpful in correlating the properties with low-dose radiation dosimetry.
Abstract: The effects of different low doses of gamma irradiation on polyaniline-zinc oxide composite thin films were studied. The structural and optical properties of the sample were investigated using X-ray diffraction, ultraviolet visible spectroscopy, Fourier transform infrared spectroscopy and photoluminescence spectroscopy. The variation in the structural and optical properties shown in this analysis will be helpful in correlating the properties with low-dose radiation dosimetry.
7 citations
"Gamma Radiation Detection Response ..." refers background in this paper
...dose gamma radiation effects have also been studied on ZnO composite thin films for dosimetry application [9]....
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TL;DR: In all samples, the permittivity, and piezoelectric constant d33 decreased with the increase of irradiation dose, and from the results of XRDs for analyzing the formation of the PMn-PT single crystals in single phase, the neutron irradiation will affect the crystallinity of PMN- PT single crystals.
Abstract: The effect of neutron irradiation on the electrical and piezoelectric properties of a PMN-PT [(Pb(Mg(1/3)Nb(2/3))O3-PbTiO3)] single crystal such as permittivity, electrical impedance and piezoelectric constant d33 has been investigated at 1 kHz. The changes of d33 and permittivity depending on the dose of neutron irradiation for all samples of PMN-PT single crystal were found. In all samples, the permittivity, and piezoelectric constant d33 decreased with the increase of irradiation dose. Changes of XRD patterns depending on the dose of neutron irradiation for all samples were found. From the results of XRDs for analyzing the formation of the PMN-PT single crystals in single phase, the neutron irradiation will affect the crystallinity of PMN-PT single crystals.
5 citations
"Gamma Radiation Detection Response ..." refers background in this paper
...The reduced crystallinity [28] with an increase of defect density [29], leads to smaller value of capacitance as a function of gamma doses of the PZT epitaxial film....
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TL;DR: In this article, the effects of three different gamma (γ) irradiations (50, 100 and 200 Gy) are reported on thin films of chromium oxide (Cr2O3).
Abstract: The effects of three different gamma (γ) irradiations (50, 100 and 200 Gy) are reported on thin films of chromium oxide (Cr2O3). The chemical thermal spray method was applied where the samples were deposited on a glass substrate at 300 °C temperature. XRD data indicated the crystallite size of the Cr2O3 thin film was 50.76 nm as-deposited, while after irradiation it was observed to be 57.03 nm, 68.21 nm and 77.21 nm for the (012) peak. AFM analyses indicated that the grain size and roughness increased with irradiation. The optical properties were measured in the wavelength range of 250–950 nm utilising a spectrophotometer before and after gamma irradiation. There was an observed reduction in the optical band gap and with an increased irradiation dose, the electrical I–V characteristics indicated a downward trend in resistance. The defects generated by γ-irradiation play a key part in the film's electrical and optical properties. This paper discusses the procedure for the induced irradiation, its physical effect, and possible applications such as dosimetry.
3 citations
"Gamma Radiation Detection Response ..." refers background in this paper
...Cr2O3 thin film revealed an increase in current as a function of increasing gamma doses [10]....
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