Journal ArticleDOI
Gate breakdown in MESFETs and HEMTs
Robert J. Trew,Umesh K. Mishra +1 more
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Abstract:
A new model for gate breakdown in MESFETs and HEMTs is presented. The model is based upon a combination of thermally assisted tunneling and avalanche breakdown. When thermal effects are considered it is demonstrated that the model predicts increasing drain-source breakdown as the gate electrode is biased towards pinch-off, in agreement with experimental data. The model also predicts the gate current versus bias behavior observed in experimental data. The model is consistent with various reports of breakdown and light emission phenomena reported in the literature. >read more
Citations
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Journal ArticleDOI
High breakdown voltage AlGaN-GaN HEMTs achieved by multiple field plates
TL;DR: In this article, a high-voltage high-electron mobility transistors have been fabricated using multiple field plates over dielectric passivation layers, and the device breakdown voltage was found to increase with the addition of the field plates.
Journal ArticleDOI
SiC and GaN transistors - is there one winner for microwave power applications?
TL;DR: Improvements in the growth of wide bandgap semiconductor materials, such as SiC and the GaN-based alloys, provide the opportunity to now design and fabricate microwave transistors that demonstrate performance previously available only from microwave tubes.
Journal ArticleDOI
A new drain-current injection technique for the measurement of off-state breakdown voltage in FETs
S.R. Bahl,J.A. del Alamo +1 more
TL;DR: In this article, a simple three-terminal technique for measuring the off-state breakdown voltage of FETs is presented, where current is injected into the drain of the on-state device and the gate is then ramped down to shut the device off.
Journal ArticleDOI
Fabrication and Characterization of GaN FETs
TL;DR: The current status of GaN-based FET technology and performance is reviewed in this paper, where fabrication details and the dc and microwave characteristics of the GaN MESFETs that utilize Si-doped channels on semi-insulating buffer layers are presented.
Journal ArticleDOI
Microwave AlGaN/GaN HFETs
TL;DR: In this paper, the operating physics, performance potential, and status of device development of microwave AlGaN/GaN heterostructure field effect transistors are presented. But the authors do not consider the effect of high-current and high-voltage on the performance of these devices.
References
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Journal ArticleDOI
Field and thermionic-field emission in Schottky barriers
F.A. Padovani,R. Stratton +1 more
TL;DR: In this article, the authors derived voltage-current characteristics for field and T-F emission in the forward and reverse regime of Schottky barriers formed on highly doped semiconductors.
Journal ArticleDOI
Effective Carrier Mobility in Surface-Space Charge Layers
TL;DR: In this paper, an effective mobility was obtained from a solution of the Boltzmann equation for two types of potential functions: (a) a linear potential corresponding to a constant space-charge field, and (b) a Poisson's equation including an external bias applied normal to the surface.
Journal ArticleDOI
Power-limiting breakdown effects in GaAs MESFET's
TL;DR: In this paper, a model of the depletion layer configuration of planar and recessed-gate FETs was proposed to solve the problem of reverse breakdown at the drain-side edge of the gate, where the breakdown voltage was inversely proportional to the product of the doping level and active layer thickness.
Journal ArticleDOI
Improved breakdown voltage in GaAs MESFETs utilizing surface layers of GaAs grown at a low temperature by MBE
TL;DR: A metal-semiconductor field effect transistor (MESFET) utilizing surface layers of GaAs grown at a low temperature by MBE (LT GaAs) under the gate electrode has been fabricated in this article.
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