Gate Control of Spin-Orbit Interaction in an Inverted I n 0.53 G a 0.47 As/I n 0.52 A l 0.48 As Heterostructure
TL;DR: In this article, the spin-orbit interaction in an inverted I${\mathrm{n}}_{0.53}$G${a}}{0.48}$As quantum well can be controlled by applying a gate voltage.
Abstract: We have confirmed that a spin-orbit interaction in an inverted I${\mathrm{n}}_{0.53}$G${\mathrm{a}}_{0.47}$As/I${\mathrm{n}}_{0.52}$A${\mathrm{l}}_{0.48}$As quantum well can be controlled by applying a gate voltage. This result shows that the spin-orbit interaction of a two-dimensional electron gas depends on the surface electric field. The dominant mechanism for the change in the spin-orbit interaction parameter can be attributed to the Rashba term. This inverted I${\mathrm{n}}_{0.53}$G${\mathrm{a}}_{0.47}$As/I${\mathrm{n}}_{0.52}$A${\mathrm{l}}_{0.48}$As heterostructure is one of the promising materials for the spin-polarized field effect transistor which is proposed by Datta and Das [Appl. Phys. Lett. 56, 665 (1990)].
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