Journal ArticleDOI
Gate Current Partitioning Model for Schottky Gate GaN HEMTs
Reads0
Chats0
TLDR
In this article, a gate current partition scheme for Schottky gate GaN-based high-electron-mobility transistors using a charge-based approach is proposed, which passes the symmetry test.Abstract:
A gate current partition scheme for Schottky gate GaN-based high-electron-mobility transistors (HEMTs) using a charge-based approach is proposed. Analytical expressions for gate-to-drain and gate-to-source components of Fowler–Nordheim tunneling (FNT), Poole–Frenkel emission (PFE), thermionic emission (TE), and defect assisted tunneling (DAT) currents are derived. This current partition model is implemented in Verilog-A and validated with experimental results for a wide range of gate and drain bias. The model also passes the symmetry test.read more
References
More filters
Journal ArticleDOI
A charge-oriented model for MOS transistor capacitances
D.E. Ward,Robert W. Dutton +1 more
TL;DR: A new model for computer simulation of capacitance effects in MOS transistors is presented, which guarantees conservation of charge and includes bulk capacitances.
Journal ArticleDOI
Gate Leakage Mechanisms in AlGaN/GaN and AlInN/GaN HEMTs: Comparison and Modeling
Sreenidhi Turuvekere,Naveen Karumuri,A. Azizur Rahman,Arnab Bhattacharya,Amitava DasGupta,Nandita DasGupta +5 more
TL;DR: In this article, the gate leakage mechanisms in AlInN/GaN and AlGaN/GAN high electron mobility transistors (HEMTs) are compared using temperature-dependent gate currentvoltage (IG-VG) characteristics.
Journal ArticleDOI
Surface-Potential-Based Compact Modeling of Gate Current in AlGaN/GaN HEMTs
TL;DR: In this article, the gate current in AlGaN/GaN high-electron mobility transistors is modeled analytically in a surface potential-based compact model, and a trap-assisted tunneling component is added.
Journal ArticleDOI
A Continuous Analytical Model for 2-DEG Charge Density in AlGaN/GaN HEMTs Valid for All Bias Voltages
TL;DR: In this paper, an analytical model for 2Dimensional Electron Gas (2-DEG) charge density in AlGaN/GaN High Electron Mobility Transistors is developed considering electron charge in the barrier layer.
Proceedings ArticleDOI
A general partition scheme for gate leakage current suitable for MOSFET compact models
TL;DR: In this paper, it was shown that the source/drain partition of gate leakage current in a MOSFET is identical to that of inversion charge, and a general recipe for addressing the partition issue was provided.