Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
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This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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Gourd-shaped hole array germanium (Ge)-on-insulator photodiodes with improved responsivity and specific detectivity at 1,550 nm.
TL;DR: Gourd-shaped hole array photodetectors for Si-based photonic integrated circuits were designed and demonstrated on a germanium-on-insulator (GOI) substrate.
Journal ArticleDOI
High spatial frequency laser induced periodic surface structure formation in germanium by mid-IR femtosecond pulses
Drake R. Austin,Kyle Kafka,Yu Hang Lai,Zhou Wang,Kaikai Zhang,Hui Li,Cosmin I. Blaga,Allen Y. Yi,Louis F. DiMauro,Enam Chowdhury +9 more
TL;DR: In this article, the formation of high spatial frequency laser induced periodic surface structures (HSFL) in germanium by femtosecond mid-IR pulses with wavelengths between 2.0 and 3.6 was studied with varying angle of incidence and polarization.
Journal ArticleDOI
Optimized Al-doped TiO2 gate insulator for a metal-oxide-semiconductor capacitor on a Ge substrate
Dong Gun Kim,Cheol Hyun An,Sang Hyeon Kim,Dae Seon Kwon,Junil Lim,Woojin Jeon,Cheol Seong Hwang +6 more
TL;DR: In this article, a high-k gate insulator for the Ge-based metal-oxide-semiconductor field effective transistor (MOSFET) application was examined for the single-layer TiO2 film showed a too high leakage current to be used as a useful GI.
Caracterización de la variabilidad dependiente del tiempo de MOSFETs ultraescalados para su modelado compacto
TL;DR: In this paper, a metodologia of extraccion of parametros basada en the modelo fisico PDO (Probabilistic Defect Occupancy Model) is presented.
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