Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
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TLDR
This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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Journal ArticleDOI
Formation and characterization of holmium oxide on germanium‐based metal‐oxide‐semiconductor capacitor
Journal ArticleDOI
Quantum-confined blue photoemission in strain-engineered few-atomic-layer 2D germanium
Naveed Hussain,Naveed Hussain,Yao Yisen,Rizwan Ur Rehman Sagar,Tauseef Anwar,Tauseef Anwar,Muhammad Murtaza,Kai Huang,Khurram Shehzad,Hui Wu,Zhiming Wang +10 more
TL;DR: In this paper, a facile vacuum-tube hot-pressing strategy to synthesize strain-engineered few-atomic-layer 2D germanium nanoplates (Ge-NPts) directly on fused silica substrate (SiO2) is developed.
Journal ArticleDOI
Electrical Characterization of Germanium Nanowires Using a Symmetric Hall Bar Configuration: Size and Shape Dependence.
Ahmad Echresh,Himani Arora,Florian Fuchs,Zichao Li,René Hübner,Slawomir Prucnal,Jörg Schuster,Peter Zahn,Manfred Helm,Shengqiang Zhou,Artur Erbe,Lars Rebohle,Yordan M. Georgiev +12 more
TL;DR: In this article, a symmetric Hall bar configuration for highly p-type germanium nanowires (GeNWs), fabricated by a top-down approach using electron beam lithography and inductively coupled plasma reactive ion etching, is presented.
Proceedings ArticleDOI
Optimization of controlled two-step liquid phase crystallization of Ge-on-Si
TL;DR: In this paper, a two-step liquid phase crystallization process for realizing large-grain epitaxial germanium (Ge) on silicon substrates is presented, where the first step is heated to 950°C for 5 minutes, a temperature above the melting point of Ge. Next the films are allowed to cool down to 930°C and maintained at that temperature for 1 to 5 hours respectively in order to check its effect on the crystallization.
Journal ArticleDOI
Dissociative adsorption of a multifunctional compound on a semiconductor surface: a theoretical study of the adsorption of hydroxylamine on Ge(100)
Hyunkyung Park,Do Hwan Kim +1 more
TL;DR: Simulated STM images suggested the change in electron density that would occur upon adsorption of hydroxylamine in various adsorptive configurations, and specifically indicated the N-O dissociative product to have greater electron density around the amine groups, and the hydroxyl groups to mainly contribute electron density to the unoccupied electronic states.
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