Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
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TLDR
This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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Formation of Thin NiGe Films by Magnetron Sputtering and Flash Lamp Annealing.
Viktor Begeza,Erik Mehner,Hartmut Stöcker,Yufang Xie,Alejandro Laso Garcia,René Hübner,Denise Erb,Shengqiang Zhou,Lars Rebohle +8 more
TL;DR: In this work, thin films of nickel germanides (Ni–Ge) were formed by magnetron sputtering followed by flash lamp annealing (FLA) to investigate the formation of NiGe on three types of substrates: on amorphous (a-Ge) as well as polycrystalline Ge (poly-Ge).
Journal ArticleDOI
Important roles of native-oxides on the electronic band offsets at Ge-oxide/Ge(0 0 1) heterojunction in ambient environment
TL;DR: In this paper, a clean Ge(0, 0, 1) surface was exposed to ambient environment for up to 600 days and the effect of native oxide on metal/semiconductor-oxide interface was investigated.
Journal ArticleDOI
Adsorption Structures of Acetic Acid on Ge(100) at High Coverage
Eunkyung Hwang,Do Hwan Kim +1 more
TL;DR: In this article, the adsorption of acetic acid on Ge(100) in the submonolayer and saturation coverages was investigated using scanning tunneling microscopy (STM) and density functional theory (DFT) calculations.
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Influences of cooling rate on formation of amorphous germanene
TL;DR: In this article, the authors studied the influence of cooling rate on the formation of 2D germanene via molecular dynamics simulation using atomistic models composed of 104 atomic Ge atoms with the Stillinger - Weber potential.
Journal ArticleDOI
Growth kinetic and composition of the interfacial layer for RF sputtering Al2O3 layer on germanium
Siti Kudnie Sahari,Muhammad Kashif,Norsuzailina Mohamed Sutan,Zaidi Embong,Nik Amni Fathi Nik Zaini Fathi,Azrul Azlan Hamzah,Rohana Sapawi,Burhanuddin Yeop Majlis,Ibrahim Ahmad +8 more
TL;DR: In this paper, the authors investigated the starting surface of Ge to IL growth between Al2O3/Ge that will lead to the improvement in Ge metal insulator field effect transistors (MISFETs) application.
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