Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
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TLDR
This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
Citations
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Proceedings ArticleDOI
Infrared (IR) photoresistors based on recrystallized amorphous germanium films on silicon using liquid phase epitaxy
TL;DR: In this article, a heterogeneously integrated germanium (Ge) NIR photo-resistor fabricated on CMOS-compatible silicon substrates is presented, where the resistor is fabricated on an epitaxial Germanium films grown on silicon using a novel liquid phase crystallization (LPC) process.
Patent
Germanium smoothing and chemical mechanical planarization processes
Tatsuyoshi Kawamoto,Mahadevaiyer Krishnan,Yohei Oishi,Dinesh K. Penigalapati,Rachel S. Steiner,James A. Tornello,Tatsuya Yamanaka +6 more
TL;DR: In this article, a chemical mechanical planarization method for planarizing germanium material using at least one slurry composition to form coplanar surfaces of the germania material and the dielectric layer is described.
Journal ArticleDOI
Impact of Slot Plane Antenna Annealing on Carrier Transport Mechanism and Reliability on ZrO 2 /Al 2 O 3 /Ge Gate Stack
TL;DR: In this paper, the p-Ge/Al2O3/ZrO2/TiN gate stacks were subjected to different slot plane antenna oxidation (SPAO) conditions: 1) prior to any high-k atomic layer deposition (ALD); 2) in between Al2O 3 and ZrO 2ALD layers; and 3) after the ALD of high-{k}$ layers.
Journal ArticleDOI
N-type doping of germanium epilayer on silicon by ex-situ phosphorus diffusion based on POCl3 phosphosilicate glass
Chan-Hyuck Park,Han Pan,Yasuhiko Ishikawa,Yasuhiko Ishikawa,Kazumi Wada,Kazumi Wada,Donghwan Ahn +6 more
TL;DR: In this article, an ex-situ phosphorus diffusion doping for germanium integrated photonic devices on silicon chip is reported, where phosphorus oxychloride (POCl3)-based phosphosilicate glass is chosen for n-type diffusion.
Journal ArticleDOI
Single-crystal-like germanium thin films on large-area, compliant, light-weight, flexible, single-crystal-like substrates
TL;DR: In this article , Germanium (Ge) films were heteroepitaxially grown on flexible, large-area, single-crystal-like metallic substrates using electron beam evaporation.
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