Germanium Based Field-Effect Transistors: Challenges and Opportunities
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"Germanium Based Field-Effect Transi..." refers background in this paper
...There are, however, significant additional engineering challenges to achieving this, such as overcoming Ge’s tendency for have a higher interface state density (Dit) near the conduction band edge [21,22] and developing low resistance ohmic contacts to n-type Ge [23,24]....
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...Ge n-channel devices continue to lag behind, but are also making progress due to improved ohmic contacts [24,145]....
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...The insertion of thin potential barriers, such as that provided by thin layers of Al2O3 [146], SiN3 [147], TiO2 [145,148], ZnO [24], Ge3N4 [149], GeOx [150,151], MgO [152,153], and Y2O3 [154] have been shown to reduce the Schottky barrier height as well as facilitate the unpinning of Fermi-level in n-type Ge....
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114 citations
"Germanium Based Field-Effect Transi..." refers background in this paper
...Recently, Zhang et al. [13] demonstrated an EOT of 0.65 nm using a gate stack of TiO2/Al2O3/Ge....
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...Crystallographic-orientation agnostic TiO2-based MIS contacts may be particularly useful in the next generation of Ge FinFETs, where different Ge orientations can be exploited to facilitate mobility enhancement for n- and p-channel devices [148]....
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...The insertion of thin potential barriers, such as that provided by thin layers of Al2O3 [146], SiN3 [147], TiO2 [145,148], ZnO [24], Ge3N4 [149], GeOx [150,151], MgO [152,153], and Y2O3 [154] have been shown to reduce the Schottky barrier height as well as facilitate the unpinning of Fermi-level in n-type Ge....
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...For this work, a fair leakage current of about 1 × 10 −2 A/cm 2 at Vg = −1 V is reported for the combined TiO2/Al2O3/Ge stack....
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...It has been recently reported that the lower CBOs obtained for the crystallographic oriented TiO2/Ge system, irrespective of the Ge crystallographic orientation, presents a potential for employing a TiO2 insulating layer for MIS contact applications....
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112 citations
"Germanium Based Field-Effect Transi..." refers background in this paper
...[59] developed a model to determine the optimal dimensions, or aspect ratio (AR=height/width), of the trenches....
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