Germanium Based Field-Effect Transistors: Challenges and Opportunities
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"Germanium Based Field-Effect Transi..." refers background in this paper
...Recently, researchers have shown some success in improving interface quality by capping the GeO2/Ge interface with diffusion resistant high-k material [13,14,138]....
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...A wide variety of oxidation methods are being explored, including thermal oxidation [12,71,102,119–130], ozone or atomic oxygen exposure [131–136], high-pressure oxidation [103,104,137], radical oxidation [138], and plasma techniques [9,14,139]....
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79 citations
"Germanium Based Field-Effect Transi..." refers background in this paper
...[64] obtained a single-crystalline fully-relaxed layer (4 nm) of Ge on a (LaxY1–x)2O3/Si(111) template....
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78 citations
"Germanium Based Field-Effect Transi..." refers background or methods in this paper
...The ART approach has been shown to produce narrow regions of excellent quality Ge, and has already been used in a commercial product [61]....
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...For some device applications long 20 μm wide patches of high quality Ge may be sufficient [61]....
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