Germanium Based Field-Effect Transistors: Challenges and Opportunities
Patrick S. Goley,Mantu K. Hudait +1 more
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This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack.Abstract:
The performance of strained silicon (Si) as the channel material for today's metal-oxide-semiconductor field-effect transistors may be reaching a plateau. New channel materials with high carrier mobility are being investigated as alternatives and have the potential to unlock an era of ultra-low-power and high-speed microelectronic devices. Chief among these new materials is germanium (Ge). This work reviews the two major remaining challenges that Ge based devices must overcome if they are to replace Si as the channel material, namely, heterogeneous integration of Ge on Si substrates, and developing a suitable gate stack. Next, Ge is compared to compound III-V materials in terms of p-channel device performance to review how it became the first choice for PMOS devices. Different Ge device architectures, including surface channel and quantum well configurations, are reviewed. Finally, state-of-the-art Ge device results and future prospects are also discussed.read more
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High-K materials and metal gates for CMOS applications
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Synthesis and Characterization of Hexagonal Boron Nitride as a Gate Dielectric
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Enabling Energy Efficiency and Polarity Control in Germanium Nanowire Transistors by Individually Gated Nanojunctions
Jens Trommer,Andre Heinzig,Uwe Mühle,Uwe Mühle,Markus Löffler,Annett Winzer,Paul M. Jordan,Jurgen Beister,Tim Baldauf,Marion Geidel,B. Adolphi,Ehrenfried Zschech,Thomas Mikolajick,Walter M. Weber +13 more
TL;DR: Finite-element drift-diffusion simulations reveal that both leakage current suppression and polarity control can also be achieved at highly scaled geometries, providing solutions for future energy-efficient systems.
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Ultra-doped n-type germanium thin films for sensing in the mid-infrared
Slawomir Prucnal,Fang Liu,Matthias Voelskow,Lasse Vines,Lars Rebohle,Denny Lang,Yonder Berencén,Stefan Andric,Roman Boettger,Manfred Helm,Manfred Helm,Shengqiang Zhou,Wolfgang Skorupa +12 more
TL;DR: Ion implantation followed by rear side flash-lamp annealing (r-FLA) is used for the fabrication of heavily doped n-type Ge with high mobility, which enables to exploit the plasmonic properties of Ge for sensing in the mid-infrared spectral range.
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Bending induced electrical response variations in ultra-thin flexible chips and device modeling
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References
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Effects of Sulfur Passivation on Germanium MOS Capacitors With HfON Gate Dielectric
Ruilong Xie,Chunxiang Zhu +1 more
TL;DR: In this article, the effects of sulfur passivation, using aqueous ammonium sulfide ((NH4)2S), on germanium (Ge) MOS capacitors with sputtered HfON as gate dielectric and TaN as metal-gate electrode.
Journal ArticleDOI
Physical origins of mobility degradation in extremely scaled SiO2/HfO2 gate stacks with La and Al induced dipoles
TL;DR: Metal-gate-induced interfacial layer (IL) scaling using a HfO2 dielectric is demonstrated and the kinetics underlying this process are clarified and it is found that the mobility degradation for La-containing high-κ dielectrics is due to the intrinsic IL scaling effect, whereas the Al-induced dipole brings about additional mobility degradation.
Journal ArticleDOI
Small-Signal Response of Inversion Layers in High-Mobility $\hbox{In}_{0.53}\hbox{Ga}_{0.47}\hbox{As}$ MOSFETs Made With Thin High- $\kappa$ Dielectrics
A. Ali,H. Madan,S. Koveshnikov,Serge Oktyabrsky,Rama Kambhampati,T. Heeg,Darrell G. Schlom,Suman Datta +7 more
TL;DR: In this article, the experimental small-signal response of inversion layers in In0.53 Ga0.47As MOSFETs fabricated with LaAlO3 gate dielectric was evaluated.
Journal ArticleDOI
Bilayer metal oxide gate insulators for scaled Ge-channel metal-oxide-semiconductor devices
TL;DR: In this paper, the electrical properties of germanium-channel metal-oxide-semiconductor capacitors with an amorphous atomic-layer-deposited (ALD)-Al2O3 interlayer (IL) and higher-k ALD-TiO2 gate dielectric were investigated.
Proceedings ArticleDOI
Advancing CMOS beyond the Si roadmap with Ge and III/V devices
M.M. Heyns,Alireza Alian,Guy Brammertz,Matty Caymax,Y.C. Chang,L.K. Chu,B. De Jaeger,Geert Eneman,Federica Gencarelli,Guido Groeseneken,Geert Hellings,Andriy Hikavyy,T. Y. Hoffmann,Michel Houssa,Cedric Huyghebaert,Daniele Leonelli,Dennis Lin,Roger Loo,Wim Magnus,Clement Merckling,Marc Meuris,Jerome Mitard,Laura Nyns,Tommaso Orzali,Rita Rooyackers,Sonja Sioncke,Bart Sorée,Xiao Sun,Anne Vandooren,Anne S. Verhulst,Benjamin Vincent,Niamh Waldron,Gang Wang,Wei-E Wang,Liesbeth Witters +34 more
TL;DR: The use of germanium and III-V compounds as potential replacements for silicon channels has attracted lots of attention for its application in advanced pMOS devices as discussed by the authors, and Indium gallium arsenide compounds, with their intrinsically superior electron mobility and high saturation velocity, are considered as a candidate for nMOS device beyond 14 nm node technology.