Germanium Based Field-Effect Transistors: Challenges and Opportunities
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"Germanium Based Field-Effect Transi..." refers background in this paper
...since they are beyond the scope this this article): remote optical phonon scattering (RPS) [88,89], remote Coulomb scattering (RCS) [90,91], and remote surface roughness scattering [92,93]....
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...The reasons for this are not entirely clear, however three mechanisms have been put forward (listed without details here since they are beyond the scope this this article): remote optical phonon scattering (RPS) [88,89], remote Coulomb scattering (RCS) [90,91], and remote surface roughness scattering [92,93]....
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690 citations
"Germanium Based Field-Effect Transi..." refers background in this paper
...deposition (MDB) [80,81], and atomic layer deposition (ALD) (two variations: thermal [82], and plasma [83])....
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"Germanium Based Field-Effect Transi..." refers background in this paper
...Furthermore, a list of well-established device metrics used for benchmarking logic transistors is essential [199]....
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"Germanium Based Field-Effect Transi..." refers background in this paper
...Due to the exceptionally high μh of Ge, and the progress made in Ge based p-channel MOSFETs (pMOSFETs) [6–14] and p-channel quantum well FETs (pQWFETs) [2,15–19] over the last decade, there appears to be a consensus in the device research community and in industry that Ge offers the best option for PMOS devices [1,2,20]....
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...Ge offers both better intrinsic hole mobility and better scalability compared to Si, reprinted with permission from [20]....
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