Germanium Based Field-Effect Transistors: Challenges and Opportunities
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"Germanium Based Field-Effect Transi..." refers background in this paper
...Other materials are also being investigated such as Y2O3 [100], TiO2 [13], and La2O3 [101]....
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...The insertion of thin potential barriers, such as that provided by thin layers of Al2O3 [146], SiN3 [147], TiO2 [145,148], ZnO [24], Ge3N4 [149], GeOx [150,151], MgO [152,153], and Y2O3 [154] have been shown to reduce the Schottky barrier height as well as facilitate the unpinning of Fermi-level in n-type Ge....
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12 citations
"Germanium Based Field-Effect Transi..." refers background in this paper
...Recently, Zhang et al. [13] demonstrated an EOT of 0.65 nm using a gate stack of TiO2/Al2O3/Ge....
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...Crystallographic-orientation agnostic TiO2-based MIS contacts may be particularly useful in the next generation of Ge FinFETs, where different Ge orientations can be exploited to facilitate mobility enhancement for n- and p-channel devices [148]....
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...The insertion of thin potential barriers, such as that provided by thin layers of Al2O3 [146], SiN3 [147], TiO2 [145,148], ZnO [24], Ge3N4 [149], GeOx [150,151], MgO [152,153], and Y2O3 [154] have been shown to reduce the Schottky barrier height as well as facilitate the unpinning of Fermi-level in n-type Ge....
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...For this work, a fair leakage current of about 1 × 10 −2 A/cm 2 at Vg = −1 V is reported for the combined TiO2/Al2O3/Ge stack....
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...It has been recently reported that the lower CBOs obtained for the crystallographic oriented TiO2/Ge system, irrespective of the Ge crystallographic orientation, presents a potential for employing a TiO2 insulating layer for MIS contact applications....
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"Germanium Based Field-Effect Transi..." refers background in this paper
...A wide variety of oxidation methods are being explored, including thermal oxidation [12,71,102,119–130], ozone or atomic oxygen exposure [131–136], high-pressure oxidation [103,104,137], radical oxidation [138], and plasma techniques [9,14,139]....
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