Germanium Based Field-Effect Transistors: Challenges and Opportunities
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"Germanium Based Field-Effect Transi..." refers background in this paper
...Utilizing Ge, with its lower lattice mismatch to Si (InSb is ~19% versus ~4% for Ge), as the channel material in a QWFET configuration appears to be the most attractive option for high-mobility low-power PMOS logic....
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..., InSb [157,158], InGaSb [159–167], and GaSb [160,165,168–173]) are potential p-channel candidates due their high hole mobilities....
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...Figure 14 compares saturation current (Idsat, also called Ion) vs. off-state leakage current (Ioff) characteristics of 65 nm Ge pMOSFET [10], 40 nm InSb QWFET [157], and 100 nm Ge MOS-QWFET [15] at supply voltage of −0.5 V....
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...off-state leakage current (Ioff) characteristics of 65 nm Ge pMOSFET [10], 40 nm InSb QWFET [157], and 100 nm Ge MOS-QWFET [15] at supply voltage of −0....
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...In InSb, a μh of 1230 cm 2 /Vs was reported (at Ns = 1.1 × 10 12 cm −2 with 2% strain) [157]....
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185 citations
"Germanium Based Field-Effect Transi..." refers methods in this paper
...[55] showed that when Sb is used as the...
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184 citations
174 citations
"Germanium Based Field-Effect Transi..." refers background in this paper
...The insertion of thin potential barriers, such as that provided by thin layers of Al2O3 [146], SiN3 [147], TiO2 [145,148], ZnO [24], Ge3N4 [149], GeOx [150,151], MgO [152,153], and Y2O3 [154] have been shown to reduce the Schottky barrier height as well as facilitate the unpinning of Fermi-level in n-type Ge....
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169 citations