scispace - formally typeset
Search or ask a question
Journal ArticleDOI

Glow Discharge Produce Amorphous Sic:H Thin Films

01 Jan 1986-MRS Proceedings (Springer Science and Business Media LLC)-Vol. 70, Iss: 1, pp 325-330
TL;DR: Amorphous hydrogenated silicon carbide alloy films (a-SiC:H) were produced by the decomposition of methane and silane in a glow discharge deposition system as discussed by the authors.
Abstract: Amorphous hydrogenated silicon carbide alloy films (a-SiC:H) were produced by the decomposition of methane and silane in a glow discharge deposition system. A deposition rate of 13 A/sec was achieved for good quality films. Amorphous SiC:H films of p + type and n + type of a band gap of 1.86 eV and 1.8 eV and the activation energy of 0.4 eV and 0.23 eV, respectively were obtained. Results show that p + type and n + type a-SiC:H films can be good window layers and good diffusion barriers for indium in polyimide/metal/n-i-p(p-i-n)/ITO amorphous silicon solar cells.
Citations
More filters
Journal ArticleDOI
TL;DR: Carbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-n and n-i-p amorphous silicon solar cells.
Abstract: Carbon grading in the buffer layer at the p/i interface increases the open circuit voltage of both p-i-n and n-i-p amorphous silicon solar cells. We propose that carbon grading enlarges the electric field and reduces the electron tunneling at the p/i interface.

5 citations

References
More filters
Journal ArticleDOI
TL;DR: A series of experimental investigations on optical and optoelectronic properties of methane and ethylene-based a−SiC:H films has been made as mentioned in this paper, and the chemical bonding structure of two kinds of a− SiC: H films has also been explored from infrared (IR) absorption structural analysis.
Abstract: A series of experimental investigations on optical and optoelectronic properties of methane‐ and ethylene‐based a‐SiC:H films has been made. The chemical bonding structure of two kinds of a‐ SiC:H films has also been explored from infrared (IR) absorption structural analysis. An experimental verification for the wide gap window material in the amorphous silicon solar cell is shown on methane‐ and ethylene‐based a‐SiC:H. The methane‐based a‐SiC:H film shows one or two orders of magnitude larger photoconductivity recovery effect of doping than the ethylene‐ based one. IR absorption analysis shows that the methane‐based a‐SiC:H film is recognized as a rather ideal amorphous SiC alloy as compared with the ethylene‐based one. It has been found through these investigations that the methane‐based a‐SiC:H film is superior to the ethylene‐ based one as a window material. Utilizing the methane‐based a‐SiC:H, an 8% efficiency barrier has been broken through with an a‐SiC:H/a‐Si:H heterojunction structure.

445 citations

Journal ArticleDOI
TL;DR: Amorphous specimens of silicon carbide, silicon nitride and germanium carbide have been prepared by decomposition of suitable gaseous mixtures in a r.f.c. glow discharge.
Abstract: Amorphous specimens of silicon carbide, silicon nitride and germanium carbide have been prepared by decomposition of suitable gaseous mixtures in a r.f. glow discharge. Substrates were held at a temperature T d between 400 and 800 K during deposition. In all three of the above materials the results of optical absorption and of d.c. conductivity measurements show a systematic variation with T d and with the volume ratio of the gases used. Electron microprobe results on silicon carbide specimens indicate that a wide range of film compositions can be prepared. The optical gap has a pronounced maximum at the composition Si00–32C0–68 where it is 2·8 eV for a sample deposited at T d = 500 K, but shifts to lower energies with increasing T d. The conductivity above about 400 K has a single activation energy approximately equal to half the optical gap and extended state conduction predominates if the silicon content exceeds 32%. If the latter is reduced, hopping transport takes over and it is suggested th...

411 citations

Journal ArticleDOI
TL;DR: In this paper, a clear valency electron controllability with substitutional impurity doping in the hydrogenated amorphous silicon carbide has been found, and a new type of a•SiC:H/a•Si:H heterojunction solar cell was developed.
Abstract: A clear valency electron controllability with substitutional impurity doping in the hydrogenated amorphous silicon carbide has been found. The amorphous silicon carbide is produced by the plasma decomposition of [SiH4(1−X)+CH4(X)] with the dopant gas of a B2H6 or PH3 system. Electrical and optical properties of doped amorphous SiC films are briefly demonstrated. Utilizing this a‐SiC:H as a wide‐band‐gap window material, we have developed a new type of a‐SiC:H/a‐Si:H heterojunction solar cell. A typical cell performance is Voc = 0.887 V, Jsc = 12.33 mA/cm2, fill factor = 0.653, and the conversion efficiency of 7.14% under AM‐1 illumination.

227 citations

Journal ArticleDOI
TL;DR: In this paper, a series of experimental investigations on the characterization of methane based and ethylene based a-SiC: H as a window mateial has been made, and it has been found through these investigations that the chemical bonding structure is an important factor for a window material.
Abstract: A series of experimental investigations on the characterization of methane based and ethylene based a-SiC: H as a window mateial has been made. Chemical bonding structure of two kinds of a-SiC: H films has also been explored from infra-red absorption structural analysis. An experimental verification for the wide gap window material in the amorphous silicon solar cell is shown on methane based and ethylene based a-SiC: H. The methane based a-SiC: H/a-Si : H heterojunction solar cell shows a larger short-circuit current density than the ethylene based one. IR absorption analysis shows that methane based a-SiC: H film is a rather ideal amorphous SiC alloy as compared with the ethylene based one. It has been found through these investigations that the chemical bonding structure is an important factor for a window material.

12 citations

Journal ArticleDOI
TL;DR: In this article, the effect of dopant impurities such as diborane and phosphine on equilibrium concentration profiles of various gaseous, tonic, and condensed species was also investigated.
Abstract: The thermodynamic calculations of chemical equilibrium compositions of various species were performed for silane-hydrogen system at different temperatures [500–6000K], pressures [0.01–10 Torr], and mixing ratios [various silane fractions]. The effect of dopant impurities such as diborane and phosphine on equilibrium concentration profiles of various gaseous, tonic, and condensed species was also investigated. These data will be very useful in understanding the deposition chemistry of silane chemical systems and will be a valuable aid in optimization studies.

1 citations