Grain boundary diffusion of phosphorus in polycrystalline silicon
TL;DR: In this paper, an Arrhenius plot of grain boundary diffusion coefficients gave rise to an activation energy of 2.65 eV and preexponential factor D'0=4.8*10-3 cm2 s-1.
Abstract: Diffusion of radioactive phosphorus in polycrystalline silicon has been studied in the temperature range 566-980 degrees C. Diffusion profiles were obtained by anodic oxidation sectioning coupled with radio tracer detection. Diffusion coefficients in the grain boundary were obtained following Leclaire's method of analysis. An Arrhenius plot of grain boundary diffusion coefficients gave rise to an activation energy of 2.65 eV and pre-exponential factor D'0=4.8*10-3 cm2 s-1.
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TL;DR: In this paper, the dopant diffusion path in n-and p-types polycrystalline-Si gates of trench-type three-dimensional (3D) metal-oxide-semiconductor field effect transistors (MOSFETs) was investigated using atom probe tomography, based on the annealing time dependence of dopant distribution at 900°C.
Abstract: The dopant (P and B) diffusion path in n- and p-types polycrystalline-Si gates of trench-type three-dimensional (3D) metal-oxide-semiconductor field-effect transistors (MOSFETs) were investigated using atom probe tomography, based on the annealing time dependence of the dopant distribution at 900 °C. Remarkable differences were observed between P and B diffusion behavior. In the initial stage of diffusion, P atoms diffuse into deeper regions from the implanted region along grain boundaries in the n-type polycrystalline-Si gate. With longer annealing times, segregation of P on the grain boundaries was observed; however, few P atoms were observed within the large grains or on the gate/gate oxide interface distant from grain boundaries. These results indicate that P atoms diffuse along grain boundaries much faster than through the bulk or along the gate/gate oxide interface. On the other hand, in the p-type polycrystalline-Si gate, segregation of B was observed only at the initial stage of diffusion. After f...
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TL;DR: In this paper , the degradation of the liquid electrolyte and Si electrode and their interface were investigated using the latest developments in cryo-atom probe tomography, and it was shown that Si anode corrosion from the decomposition of the Li salt before charge-discharge cycles even begin.
Abstract: To advance the understanding of the degradation of the liquid electrolyte and Si electrode, and their interface, we exploit the latest developments in cryo-atom probe tomography. We evidence Si anode corrosion from the decomposition of the Li salt before charge–discharge cycles even begin. Volume shrinkage during delithiation leads to the development of nanograins from recrystallization in regions left amorphous by the lithiation. The newly created grain boundaries facilitate pulverization of nanoscale Si fragments, and one is found floating in the electrolyte. P is segregated to these grain boundaries, which confirms the decomposition of the electrolyte. As structural defects are bound to assist the nucleation of Li-rich phases in subsequent lithiations and accelerate the electrolyte’s decomposition, these insights into the developed nanoscale microstructure interacting with the electrolyte contribute to understanding the self-catalyzed/accelerated degradation Si anodes and can inform new battery designs unaffected by these life-limiting factors.
6 citations
TL;DR: In this article, the surface of highly phosphorus-doped polysilicon films produced by low pressure chemical vapour deposition (LPCVD) was investigated using scanning tunneling microscopy (STM) in air.
4 citations
TL;DR: In this article, the authors applied intense visible light irradiation to polycrystalline Si-thin polysilicon on glass substrates, which exhibited strong absorption features due to their amorphization by the application of a large implantation dose.
Abstract: Intense visible light irradiation was applied to phosphorous-implanted polycrystalline Si thin films on glass substrates, whichexhibited strong absorption features due to their amorphization by the application of a large implantation dose. Despite the shortpulsedurationofthevisiblelight,theuseofahigh-poweredandsubsequentlyintensifiedXearclampallowedforsignificantelectricalactivation even at near-ambient temperatures and above, surpassing the efficacy of conventional thermal activation processes. Usinga simple optical-thermal model, theoretical predictions indicate that the instantaneous temperatures of the phosphorous-implantedSi thin films reach approximately 680
3 citations
TL;DR: In this article, the effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography, and the results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P and B.
Abstract: The effect of P or B predoping on As diffusion in polycrystalline Si was investigated by atom probe tomography. In all samples, a high concentration of As was found at grain boundaries, indicating that such boundaries are the main diffusion path. However, As grain-boundary diffusion was suppressed in the B-doped sample and enhanced in the P-doped sample. In a sample codoped with both P and B, As diffusion was somewhat enhanced, indicating competition between the effects of the two dopants. The results suggest that As grain-boundary diffusion can be controlled by varying the local concentration of P or B.
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TL;DR: In this paper, a more realistic model of the inhomogeneous nature of diffusion in polycrystalline samples was presented, showing that even though the relation between diffusion depth and time may be the same from bulk and grain boundary models, the diffusion coefficients determined from assuming the homogeneous semi-infinite solid may be several orders of magnitude in error.
28 citations