Group IV direct band gap photonics: Methods, Challenges and Opportunities
R. Geiger,T. Zabel,Hans Sigg +2 more
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TLDR
The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: the idea is to integrate fully compatible group IV material with equally favorable optical properties as the chemically incompatible group III-V-based systems.Abstract:
The concept of direct band gap group IV materials offers a paradigm change for Si-photonics concerning the monolithic implementation of light emitters: The idea is to integrate fully compatible group IV materials with equally favorable optical properties as the chemically incompatible group III-V-based systems The concept involves either mechanically applied strain on Ge or alloying of Ge with Sn and permits to drastically improve the insufficient radiative efficiency of Ge The favorable optical properties result from a modified band structure transformed from an indirect to a direct one The first demonstration of such a direct band gap laser, accomplished in GeSn, exemplifies the capability of this new concept These systems may permit a qualitative as well as a quantitative expansion of Si-photonics into traditional but also new areas of applications, provided they can be operated energy efficiently, under ambient conditions and integrated with current Si technologies This review aims to discuss the challenges along this path in terms of fabrication, characterization and fundamental understanding, and will elaborate on evoking opportunities of this new class of group IV-based laser materialsread more
Citations
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Journal ArticleDOI
Germanium based photonic components toward a full silicon/germanium photonic platform
Vincent Reboud,Alban Gassenq,J.M. Hartmann,Julie Widiez,Léopold Virot,J. Aubin,Kevin Guilloy,Samuel Tardif,Jean-Marc Fedeli,Nicolas Pauc,Alexei Chelnokov,Vincent Calvo +11 more
TL;DR: In this paper, the authors show that optical germanium-on-insulator (GeOI) substrates fabricated by the Smart Cut™ technology is a key feature for future Si-complementary metal oxide Semiconductor (CMOS) compatible laser demonstration.
Journal ArticleDOI
Towards monolithic integration of germanium light sources on silicon chips
TL;DR: Germanium (Ge) is a group-IV indirect band gap semiconductor, and therefore bulk Ge cannot emit light efficiently as mentioned in this paper, and significant engineering efforts are being made to convert Ge into an efficient gain material monolithically integrated on a Si chip.
Journal ArticleDOI
Epitaxial Ge0.81Sn0.19 Nanowires for Nanoscale Mid-Infrared Emitters.
Michael S. Seifner,Alain Dijkstra,Johannes Bernardi,Andreas Steiger-Thirsfeld,Masiar Sistani,Alois Lugstein,Jos E. M. Haverkort,Sven Barth,Sven Barth +8 more
TL;DR: Temperature and laser power dependent photoluminescence analyses verify the formation of a direct band gap material with emission in the mid-infrared region and values expected for unstrained Ge0.81Sn0.19 (e.g. band gap of 0.3 eV at room temperature).
Journal ArticleDOI
Accurate strain measurements in highly strained Ge microbridges
Alban Gassenq,Samuel Tardif,Kevin Guilloy,G. Osvaldo Dias,Nicolas Pauc,Ivan Duchemin,Denis Rouchon,Jean-Michel Hartmann,Julie Widiez,Jose M. Escalante,Yann-Michel Niquet,R. Geiger,T. Zabel,Hans Sigg,Jérôme Faist,Alexei Chelnokov,François Rieutord,Vincent Reboud,Vincent Calvo +18 more
TL;DR: In this article, the Raman-strain relation at higher strain using synchrotron-based microdiffraction was established. But, the strain values are commonly deduced from Raman spectroscopy using empirical linear models only established up to 1.2%.
Journal ArticleDOI
Ferroelectric Enhanced Performance of a GeSn/Ge Dual-Nanowire Photodetector.
Yuekun Yang,Xudong Wang,Chen Wang,Yuxin Song,Miao Zhang,Zhongying Xue,Shumin Wang,Zhongyunshen Zhu,Guanyu Liu,Panlin Li,Linxi Dong,Yongfeng Mei,Paul K. Chu,Weida Hu,Jianlu Wang,Zengfeng Di +15 more
TL;DR: This work demonstrates a flexible GeSn/Ge dual-nanowire (NW) structure, in which the strain relaxation is achieved by the elastic deformation without introducing defects and the feature dimension is naturally at nanoscale, which suggests the flexible Ge Sn/ Ge dual-NW may open an avenue for Si-compatible optoelectronic circuits operating in the short-wavelength infrared range.
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