Growth and characterization of highly oriented AlN films by DC reactive sputtering
25 Jun 2015-Journal of Physics C: Solid State Physics (AIP Publishing LLCAIP Publishing)-Vol. 1665, Iss: 1, pp 080064
TL;DR: Wurtzite type AlN thin films were grown on Si (100) substrates at substrate temperatures varying from RT to 600 °C using DC reactive magnetron sputtering by keeping the parameters such as Ar/N2, power and target to substrate distance (TSD) constant as mentioned in this paper.
Abstract: Wurtzite type AlN thin films were grown on Si (100) substrates at substrate temperatures (S.T.) varying from RT to 600 °C using DC reactive magnetron sputtering by keeping the parameters such as Ar/N2, power and target to substrate distance (TSD) constant. Evolution of preferred orientation of the deposited films was studied by GIXRD and a-axis orientation was observed at 400 °C. The residual stress measurement of these films was carried out by sin2ψ technique and they varied from tensile to compressive (R.T. to 600 °C). Highest hardness (HIT) was observed for 400 °C as 20 GPa, whereas highest modulus was observed for 600 °C as 264 GPa.
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TL;DR: In this article, the reduction in residual stress, the crystal structure, surface morphology and nano-mechanical properties of magnetron sputtered AlN thin films as a function of substrate temperature (T s, 35-600 ǫ ) were reported.
34 citations
TL;DR: In this paper, the authors report the mechanical properties of Cr-doped AlN thin films synthesized by reactive magnetron co-sputtering technique with different Cr concentrations (0, 2, 4, 6 and 11 at%).
15 citations
15 Dec 2018
TL;DR: In this paper, the uniaxial anisotropic optical constants of wurtzite-type a-axis oriented AlN films deposited on Si (100) using DC reactive magnetron sputtering as a function of growth temperature (Ts, 35 to 600 °C) using the spectroscopic ellipsometry (SE) technique are determined from the regression analysis of SE data, which are corroborated using TEM and AFM techniques.
Abstract: We report the uniaxial anisotropic optical constants of wurtzite-type a-axis oriented AlN films deposited on Si (100) using DC reactive magnetron sputtering as a function of growth temperature (Ts, 35 to 600 °C) using the spectroscopic ellipsometry (SE) technique. The thickness and roughness of these films are determined from the regression analysis of SE data, which are corroborated using TEM and AFM techniques. Highly oriented a-axis AlN film grown at 400 °C, exhibits high n and low k at 210 nm (deep-UV region) with small birefringence (−0.01) and dichroism (0.03) near the band edge. All these AlN films exhibit transparent nature from near-infrared (NIR) to 354 nm, where optical band gap energies vary between 5.7 to 6.1 eV.
7 citations
23 May 2017
TL;DR: Wurtzite type AlN thin films were grown on Si (100) substrate using DC reactive sputtering with varying substrate temperatures (35-600 °C) and phonon vibrational study of these films was performed by Raman Spectroscopy, where E2 (High) mode was observed with a movement of peak position from red shift to blue shift due to change in residual stress.
Abstract: Wurtzite type AlN thin films were grown on Si (100) substrate using DC reactive sputtering with varying substrate temperatures (35-600 °C). The phonon vibrational study of these films was performed by Raman Spectroscopy, where E2 (High) mode was observed with a movement of peak position from red shift to blue shift due to change in residual stress. Cross sectional TEM micrograph of these AlN films showed a columnar structure. Using phase modulated ellipsometry, refractive index and extinction co-efficient of the film were extracted based on new amorphous model and found to be 2.2 and 0.03 at a wavelength of 250 nm, respectively.
2 citations