Growth and electrical transport properties of InGaN/GaN heterostructures grown by PAMBE
TL;DR: In this paper, a single-phase InGaN epitaxial films were grown on GaN template by plasma-assisted molecular beam epitaxy and the composition of indium incorporation was found to be 23%.
About: This article is published in Materials Research Bulletin.The article was published on 2015-01-01. It has received 8 citations till now. The article focuses on the topics: Schottky barrier & Heterojunction.
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TL;DR: In this article, the optical properties and film quality for a series of high-In composition InGaN films grown on ZnO substrate by metal-organic chemical vapor deposition (MOCVD) are characterized by using high resolution X-ray diffraction (HRXRD), Rutherford backscattering (RBS), XPS, photoluminescence (PL), and Raman scattering spectroscopy (RSS).
Abstract: The optical properties and film quality for a series of high-In composition InGaN films grown on ZnO substrate by metal-organic chemical vapor deposition (MOCVD) are characterized by using high resolution X-ray diffraction (HRXRD), Rutherford backscattering (RBS), X-ray photoelectron spectroscopy (XPS), photoluminescence (PL), and Raman scattering spectroscopy (RSS). The In composition is evaluated by analyzing the RBS and PL emission spectra. The XPS measurements revealed the diffusion of Zn atoms from the substrate into InGaN films. All the analyses of experimental measurements have shown that the growth temperature played an important role in indium composition as well as of film quality. An optimum growth temperature is a necessary condition for obtaining high-quality films.
9 citations
TL;DR: In this paper, the thickness and composition of In in the InGaN layers were determined by high-resolution X-ray diffraction technique, and the composition was found to be 15-17% depending on the In flow rate.
8 citations
06 Aug 2020
TL;DR: In this article, temperature-dependent photoluminescence measurements are reported for n+ and n-type InGaN nanolayers grown by plasma-assisted molecular beam epitaxy (PAMBE) on AlN/n-Si template.
Abstract: Temperature-dependent photoluminescence measurements are reported for n+- and n-type InGaN nanolayers grown by plasma-assisted molecular beam epitaxy (PAMBE) on AlN/n-Si (111) template. A temperatu...
6 citations
TL;DR: In this article, the effect of channel thickness on the structure and transport properties of InGaN/InGaN heterostructures was investigated. But the authors focused on the In0.05Ga0.95N channel, which achieved a high electron mobility of 1712 cm2/V.
6 citations
TL;DR: In this paper, the growth mode of InGaN and GaN was determined as nanoislands with helical-like morphology by atomic force microscopy, and the Hall measurement showcased improvement in the mobility and bulk concentration for the GaN/InGaN (5-nm)/GaN structures.
Abstract: InGaN interlayer was grown between GaN layers on sapphire substrate using metal organic chemical vapour deposition. The crystalline quality of the sample was investigated using high-resolution X-ray diffraction. The indium composition and InGaN thickness were determined to be 10–15% and 5–10 nm, respectively. Transmission electron microscopy image revealed the interfacial characteristics of the InGaN and GaN layers. Raman spectroscopy revealed prominent GaN peak positions with InGaN shoulder peaks. The growth mode of InGaN and GaN was determined as nanoislands with helical-like morphology by atomic force microscopy. Hall measurement showcased improvement in the mobility and bulk concentration for the GaN/InGaN (5 nm)/GaN structures.
5 citations
References
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TL;DR: In this article, a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltages measurements on spatially inhomogeneous Schottky contacts is presented.
Abstract: We present a new analytical potential fluctuations model for the interpretation of current/voltage and capacitance/voltage measurements on spatially inhomogeneous Schottky contacts. A new evaluation schema of current and capacitance barriers permits a quantitative analysis of spatially distributed Schottky barriers. In addition, our analysis shows also that the ideality coefficient n of abrupt Schottky contacts reflects the deformation of the barrier distribution under applied bias; a general temperature dependence for the ideality n is predicted. Our model offers a solution for the so‐called T0 problem. Not only our own measurements on PtSi/Si diodes, but also previously published ideality data for Schottky diodes on Si, GaAs, and InP agree with our theory.
1,439 citations
TL;DR: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques as discussed by the authors.
Abstract: The optical properties of wurtzite-structured InN grown on sapphire substrates by molecular-beam epitaxy have been characterized by optical absorption, photoluminescence, and photomodulated reflectance techniques. These three characterization techniques show an energy gap for InN between 0.7 and 0.8 eV, much lower than the commonly accepted value of 1.9 eV. The photoluminescence peak energy is found to be sensitive to the free-electron concentration of the sample. The peak energy exhibits very weak hydrostatic pressure dependence, and a small, anomalous blueshift with increasing temperature.
1,378 citations
TL;DR: In this article, the acceptor electrode can form ohmic contact for hole injection into these crystals and that space-charge-limited currents can be drawn through them, which strongly indicates that the acceptors electrode can strongly indicate that the hole mobility in p−terphenyl is about 3×10−2 cm2/v sec, is independent of the field at least up to about 4×104 v/cm, and the hole trap concentration is at least 1013 cm−3.
Abstract: Electrical conductivity measurements were performed with thin (50 μ) single crystals of p‐terphenyl, p‐quaterphenyl, and anthracene supplied with aqueous electrodes, one of which was an iodine‐iodide solution (acceptor electrode), and the other an iodide solution. The results strongly indicate that the acceptor electrode can form ohmic contact for hole injection into these crystals and that space‐charge‐limited currents can be drawn through them. The crystals were found to contain hole‐trapping states the location‐in‐energy of which can be approximated by a decreasing exponential distribution above the valence band. The measurements showed that the hole mobility in p‐terphenyl is about 3×10−2 cm2/v sec, is independent of the field at least up to about 4×104 v/cm, and that the hole‐trap concentration is at least 1013 cm−3. The acceptor electrode used does not form ohmic contact to crystals of naphthalene and diphenyl; an explanation for this is proposed. Some theoretical aspects of ohmic contact formation ...
852 citations