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Growth of Crystals
08 Jul 2012-
TL;DR: Growth and Doping of Semiconductor Compounds: Kinetics of Incorporation Processes at Kink Sites YuYu Hervieu, MP Ruzaikin Gas-phase Growth Kinetics and Morphology of Lead and Germanium Telluride Crystals LV Yashina, VI Dernovskii, VP Zlomanov, VI Shtanov Lateral Epitaxy of Gallium Arsenide by Chloride Vapor Transport IV Ivonin, LG Lavrent'eva, LP Porokhovnichenko Growth and Structure of Si Epil
Abstract: Growth and Doping of Semiconductor Compounds: Kinetics of Incorporation Processes at Kink Sites YuYu Hervieu, MP Ruzaikin Gas-Phase Growth Kinetics and Morphology of Lead and Germanium Telluride Crystals LV Yashina, VI Dernovskii, VP Zlomanov, VI Shtanov Lateral Epitaxy of Gallium Arsenide by Chloride Vapor Transport IV Ivonin, LG Lavrent'eva, LP Porokhovnichenko Growth and Structure of Si Epilayers on Porous Si AA Fedorov, MA Revenko, EM Trukhanov, SI Romanov, AA Karanovich, VV Kirienko, MA Lamin, AK Gutakovskii, OP Pchelyakov, LV Sokolov Heteroepitaxy of Heterovalent Compounds: Molecular Beam Deposition of ZnSe on GaAs MV Yakushev, YuG Sidorov, LV Sokolov, VG Kesler, LM Logvinskii, TA Gavrilova Effect of Crystallographic Orientation of the Interface on the Growth of Perfect Epitaxial Layers of Semiconductors EM Trukhanov, AV Kolesnikov, GA Lyubas InGaAsP Solid Solutions: Phase Diagrams, Growth from the Melt on GaAs Substrates, Elastically Strained Epitaxial Layers YuB Bolkhovityanov, AS Yaroshevich, MA Revenko, EM Trukhanov Theory of Island Film Growth from a Eutectic Melt at the Late Stage of Evolution SA Kukushki, DA Grigor'ev Self-Sustained Nuclei-Assisted Explosive Crystallization VP Koverda, VN Skokov Morphological Instability and Inclusion Formation during Crystal Growth from a Flowing Solution SYu Potapenko Mechanisms of Striation Formation in Layer Growth of Crystals from Solutions IL Smolsky, AE Voloshin, EB Rudneva, NP Zaitseva, J De Yoreo Block Formation and Crystallographic Orientation Changes during Growth of Shaped Sapphire Single Crystals PI Antonov, SI Bakholdin, VM Krymov, IL Shul'pina, MP Shcheglov Revised Phase Diagrams of LiF-RF3 (R = La-Lu, Y) Systems PP Fedorov, BP Sobolev, LV Medvedeva, BM Reiterov The Growth of Laser Oxide Crystals: Structural Aspects EV Zharikov, GM Kuz'micheva, SG Novikov Vibrational Control of Czochralski Crystal Growth AZ Myal'dun, AI Prostomolotov, NK Tolochko, NA Verezub, EV Zharikov Ingrown Regular Domain Structure and Impurity Distribution in LiNbO3 Doped with a Rare Earth (Nd,Eu) and Magnesium II Naumova, NF Evlanova, OA Gliko, AA Lukashev, SV Lavrishchev
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TL;DR: The 3-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb is a promising material for high speed electronic and long wavelength photonic devices.
Abstract: Recent advances in nonsilica fiber technology have prompted the development of suitable materials for devices operating beyond 155 mu m The III-V ternaries and quaternaries (AlGaIn)(AsSb) lattice matched to GaSb seem to be the obvious choice and have turned out to be promising candidates for high speed electronic and long wavelength photonic devices Consequently, there has been tremendous upthrust in research activities of GaSb-based systems As a matter of fact, this compound has proved to be an interesting material for both basic and applied research At present, GaSb technology is in its infancy and considerable research has to be carried out before it can be employed for large scale device fabrication This article presents an up to date comprehensive account of research carried out hitherto It explores in detail the material aspects of GaSb starting from crystal growth in bulk and epitaxial form, post growth material processing to device feasibility An overview of the lattice, electronic, transport, optical and device related properties is presented Some of the current areas of research and development have been critically reviewed and their significance for both understanding the basic physics as well as for device applications are addressed These include the role of defects and impurities on the structural, optical and electrical properties of the material, various techniques employed for surface and bulk defect passivation and their effect on the device characteristics, development of novel device structures, etc Several avenues where further work is required in order to upgrade this III-V compound for optoelectronic devices are listed It is concluded that the present day knowledge in this material system is sufficient to understand the basic properties and what should be more vigorously pursued is their implementation for device fabrication (C) 1997 American Institute of Physics
655Â citations
TL;DR: In this article, the influence of impurities on the growth rate of a growing crystal has been investigated and some experiments have been carried out on a set of elementary steps and a parallel sequence of steps.
Abstract: I. Crystal Surfaces in Equilibrium with the Surrounding Medium 117 The Surface Energy of Crystals 117 1. Kinks in Elementary Steps 117 2. Crystal Surface Energy. Herring's Formula 118 3. Corner Points in the Profiles of Crystal Surfaces 119 4. Surface Stability Conditions 120 5. The Equilibrium Shape of an Open Curve 121 II. Crystal Growth from Vapor 122 6. Particles Adsorbed on a Surface 123 7. The Motion of an Isolated Step 123 8. Parallel Sequences of Elementary Steps 124 9. The Normal Rate of Spiral Growth 124 10. The Motion of Macroscopic Steps 126 11. Some Experimental Results 128 12. Evaporation 129 III. Crystal Growth from the Solution and from the Melt 129 13. Introduction 129 14. The Motion of a Parallel Sequence of Elementary Steps 130 15. The Normal Growth Rate 131 16. Some Experimental Results 131 17. Growth from the Melt 132 18. The Diffusion Field and Rate of Advance of a Macroscopic Step 133 IV. The Interaction of Growing Crystals with Impurities 134 19. The Influence of Impurities on the Growth Rate 134 a) Strongly Adsorbed Impurities Captured by a Growing Crystal 135 b). Impurity Poisoning of Sinks 135 20. Nonequilibrium Capture of Impurities in Crystal Growth 137 21. Dislocation Production in Impurity Capture 139 V. Etching 139 VI. Collective Effects in the Movement of Steps 140 22. Shock Waves of Step Density 141 23. A Kinetic Equation for Steps 143 References 145
382Â citations
TL;DR: In this article, a review of the development of the rapid growth technique for production of single crystals with the linear sizes up to 90 cm to obtain plates for laser radiation conversion in world-largest lasers is presented.
334Â citations
TL;DR: An integral model for the Osprey tm spray deposition process has been developed using established theoretical principles in this paper, which describes the interconnected processes of droplet-gas interactions in flight and subsequent droplet consolidation on the substrate.
276Â citations
01 Jan 1983
TL;DR: The major solid state principles involved in mineralization in biological systems are discussed in this paper, where three major biological control factors of mineralization are described; structural, spatial, and chemical control.
Abstract: The major solid state principles involved in mineralization in biological systems are discussed. Three major biological control factors of mineralization are described; structural, spatial, and chemical control. Factors determining nucleation on organic surfaces, mineral growth, mineral structure, and morphology are reported. Oriented growth of minerals on organic matrices can occur by three processes; (i) lattice matching (epitaxis) between the organic matrix and depositing crystal faces, (ii) surface structural relationships between the organic matrix and depositing crystal faces, (iii) ordered aggregation of preformed mineral particles. Several a priori reasons indicate that epitaxis is unlikely to be a major process of oriented growth in biomineralization. The presence and importance of biogenic amorphous minerals is also described.
251Â citations