Growth of Different Microstructure of MoS 2 through Controlled Processing Parameters of Chemical Vapor Deposition Method
29 Mar 2019-pp 1-3
TL;DR: In this paper, the growth of different microstructure of MoS 2 via chemical vapor deposition (CVD) method through controlled processing parameters is reported, where the anisotropic bonding in layered materials crystallize to form different structure such as smooth films, nanotubes, and fullerene-like nanoparticles.
Abstract: The anisotropic bonding in layered materials crystallize to form different structure such as smooth films, nanotubes, and fullerene-like nanoparticles. Here, the growth of different microstructure of MoS 2 via chemical vapor deposition (CVD) method through controlled processing parameters is reported. Scanning electron microscopy and Raman spectroscopy ascertained the MoS 2 on insulating substrate (SiO 2 /Si). It was observed that poor sulfur environment and slow vapor flow were unable to induce complete transition from MoO 3 -x to MoS 2 and formed intermediate MoO 2 .The MoS 2 and MoO 2 /MoS 2 heterostructure were synthesized via single step. In addition, by adjustment of heating rate with temperature of centre zone and vapor flow, flower like structure of MoS 2 was achieved.
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TL;DR: Graphene is established as the strongest material ever measured, and atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
Abstract: We measured the elastic properties and intrinsic breaking strength of free-standing monolayer graphene membranes by nanoindentation in an atomic force microscope. The force-displacement behavior is interpreted within a framework of nonlinear elastic stress-strain response, and yields second- and third-order elastic stiffnesses of 340 newtons per meter (N m(-1)) and -690 Nm(-1), respectively. The breaking strength is 42 N m(-1) and represents the intrinsic strength of a defect-free sheet. These quantities correspond to a Young's modulus of E = 1.0 terapascals, third-order elastic stiffness of D = -2.0 terapascals, and intrinsic strength of sigma(int) = 130 gigapascals for bulk graphite. These experiments establish graphene as the strongest material ever measured, and show that atomically perfect nanoscale materials can be mechanically tested to deformations well beyond the linear regime.
18,008 citations
"Growth of Different Microstructure ..." refers background in this paper
...[2][3] Moreover, high flexibility (strain level of ~ 10%) of the MoS2 has been introduced its presence in flexible electronics.[4][5] Mechanically exfoliated MoS2 based transistor exhibited mobility 200 cm(2) V s and high on-off current ratio of 10(8)....
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TL;DR: This work reviews the historical development of Transition metal dichalcogenides, methods for preparing atomically thin layers, their electronic and optical properties, and prospects for future advances in electronics and optoelectronics.
Abstract: Single-layer metal dichalcogenides are two-dimensional semiconductors that present strong potential for electronic and sensing applications complementary to that of graphene.
13,348 citations
"Growth of Different Microstructure ..." refers background in this paper
...8 eV as well as modulating electronic properties as indirect to direct semiconductor with varying layers of the MoS2 make it most promising candidate for nanoelectronic, optoelectronic, and photonic devices applications on conventional substrates.[2][3] Moreover, high flexibility (strain level of ~ 10%) of the MoS2 has been introduced its presence in flexible electronics....
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TL;DR: Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors, and could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
Abstract: Two-dimensional materials are attractive for use in next-generation nanoelectronic devices because, compared to one-dimensional materials, it is relatively easy to fabricate complex structures from them. The most widely studied two-dimensional material is graphene, both because of its rich physics and its high mobility. However, pristine graphene does not have a bandgap, a property that is essential for many applications, including transistors. Engineering a graphene bandgap increases fabrication complexity and either reduces mobilities to the level of strained silicon films or requires high voltages. Although single layers of MoS(2) have a large intrinsic bandgap of 1.8 eV (ref. 16), previously reported mobilities in the 0.5-3 cm(2) V(-1) s(-1) range are too low for practical devices. Here, we use a halfnium oxide gate dielectric to demonstrate a room-temperature single-layer MoS(2) mobility of at least 200 cm(2) V(-1) s(-1), similar to that of graphene nanoribbons, and demonstrate transistors with room-temperature current on/off ratios of 1 × 10(8) and ultralow standby power dissipation. Because monolayer MoS(2) has a direct bandgap, it can be used to construct interband tunnel FETs, which offer lower power consumption than classical transistors. Monolayer MoS(2) could also complement graphene in applications that require thin transparent semiconductors, such as optoelectronics and energy harvesting.
12,477 citations
"Growth of Different Microstructure ..." refers background in this paper
...[4][5] Mechanically exfoliated MoS2 based transistor exhibited mobility 200 cm(2) V s and high on-off current ratio of 10(8).[6] However, mechanical exfoliation limits the high yield of MoS2 fabrication that restricts its utillization for practical device applications....
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TL;DR: By using micromechanical cleavage, a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides are prepared and studied.
Abstract: We report free-standing atomic crystals that are strictly 2D and can be viewed as individual atomic planes pulled out of bulk crystals or as unrolled single-wall nanotubes. By using micromechanical cleavage, we have prepared and studied a variety of 2D crystals including single layers of boron nitride, graphite, several dichalcogenides, and complex oxides. These atomically thin sheets (essentially gigantic 2D molecules unprotected from the immediate environment) are stable under ambient conditions, exhibit high crystal quality, and are continuous on a macroscopic scale.
10,586 citations
"Growth of Different Microstructure ..." refers background in this paper
...Semiconducting MoS2 member of transition-metal dichalcogenides family has been emerged as an exciting 2D (two-dimensional) material in contrast to renowned zere band gap graphene.[1] Tunable bandgap form 1....
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TL;DR: Ultraensitive monolayer MoS2 phototransistors with improved device mobility and ON current are demonstrated, showing important potential for applications in MoS 2-based integrated optoelectronic circuits, light sensing, biomedical imaging, video recording and spectroscopy.
Abstract: A very sensitive photodector based on molybdenum disulphide with potential for integrated optoelectronic circuits, light sensing, biomedical imaging, video recording or spectroscopy is now demonstrated.
4,212 citations
"Growth of Different Microstructure ..." refers background in this paper
...Because, horizontally aligned MoS2 (exposed basal plane) is useful for fabricating transistor and photodiode due to inplane transportation[7] and exposed edge site MoS2 microstructures show more beneficial for sensing and hydrogen evolution reaction (HER) as a result of high chemical reactivity of edge sites....
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