Guiding and confining light in void nanostructure.

TLDR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.

Abstract: We present a novel waveguide geometry for enhancing and confining light in a nanometer-wide low-index material. Light enhancement and confinement is caused by large discontinuity of the electric field at highindex-contrast interfaces. We show that by use of such a structure the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 mm 22 . This intensity is approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides. © 2004 Optical Society of America OCIS codes: 030.4070, 130.0130, 130.2790, 230.7370, 230.7380, 230.7390, 230.7400. Recent results in integrated optics have shown the ability to guide, bend, split, and f ilter light on chips by use of optical devices based on high-index-contrast waveguides. 1–5 In all these devices the guiding mechanism is based on total internal ref lection (TIR) in a highindex material (core) surrounded by a low-indexmaterial (cladding); the TIR mechanism can strongly confine light in the high-index material. In recent years a number of structures have been proposed to guide or enhance light in low-index materials, 6–1 1 relying on external ref lections provided by interference effects. Unlike TIR, the external ref lection cannot be perfectly unity; therefore the modes in these structures are inherently leaky modes. In addition, since interference is involved, these structures are strongly wavelength dependent. Here we show that the optical field can be enhanced and conf ined in the low-index material even when light is guided by TIR. For a high-index-contrast interface, Maxwell’s equations state that, to satisfy the continuity of the normal component of electric f lux density D, the corresponding electric field (E-field) must undergo a large discontinuity with much higher amplitude in the low-index side. We show that this discontinuity can be used to strongly enhance and confine light in a nanometer-wide region of low-index material. The proposed structure presents an eigenmode, and it is compatible with highly integrated photonics technology. The principle of operation of the novel structure can be illustrated by analysis of the slab-based structure shown in Fig. 1(a), where a low-index slot is embedded between two high-index slabs (shaded regions). The novel structure is hereafter referred to as a slot waveguide. The slot waveguide eigenmode can be seen as being formed by the interaction between the fundamental eigenmodes of the individual slab waveguides. Rigorously, the analytical solution for the transverse E-field profile Ex of the fundamental TM eigenmode of the slab-based slot waveguide is