Halide perovskites for resistive random-access memories
09 May 2019-Journal of Materials Chemistry C (The Royal Society of Chemistry)-Vol. 7, Iss: 18, pp 5226-5234
TL;DR: In this article, the authors introduce halide perovskites and their operating mechanism within a ReRAM device and review the recent notable achievements along with future challenges for ReRAM devices.
Abstract: Halide perovskite based resistive random-access memory (ReRAM) devices are emerging as a new class of revolutionary data storage devices because their switching material—halide perovskite—has received considerable attention in recent years. Among the electrical characteristics of the material, its current–voltage (I–V) hysteresis, which may occur due to defect formation and migration, means that ReRAM can employ halide perovskites as a resistive switching material. Many studies have been conducted on resistive switching materials; however, the investigation of halide perovskites for ReRAM devices is still in the early research stages; therefore, the application of halide perovskites in ReRAM devices is a topic worth studying. Herein, we introduce halide perovskites and their operating mechanism within a ReRAM device. Moreover, recent notable achievements along with future challenges have been reviewed.
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TL;DR: The progress of flexible neuromorphic electronics is addressed, from basic backgrounds including synaptic characteristics, device structures, and mechanisms of artificial synapses and nerves, to applications for computing, soft robotics, and neuroprosthetics, and future research directions toward wearable artificial neuromorphic systems are suggested.
Abstract: Flexible neuromorphic electronics that emulate biological neuronal systems constitute a promising candidate for next-generation wearable computing, soft robotics, and neuroprosthetics. For realization, with the achievement of simple synaptic behaviors in a single device, the construction of artificial synapses with various functions of sensing and responding and integrated systems to mimic complicated computing, sensing, and responding in biological systems is a prerequisite. Artificial synapses that have learning ability can perceive and react to events in the real world; these abilities expand the neuromorphic applications toward health monitoring and cybernetic devices in the future Internet of Things. To demonstrate the flexible neuromorphic systems successfully, it is essential to develop artificial synapses and nerves replicating the functionalities of the biological counterparts and satisfying the requirements for constructing the elements and the integrated systems such as flexibility, low power consumption, high-density integration, and biocompatibility. Here, the progress of flexible neuromorphic electronics is addressed, from basic backgrounds including synaptic characteristics, device structures, and mechanisms of artificial synapses and nerves, to applications for computing, soft robotics, and neuroprosthetics. Finally, future research directions toward wearable artificial neuromorphic systems are suggested for this emerging area.
226 citations
TL;DR: In this paper, the authors provide an overview of achieving high-performance perovskite solar cells by using scalable fabrication methods via precise nucleation and crystal growth control during the perov-skite film formation process.
Abstract: Over the past decade, intensive research efforts have been directed toward the field of organic–inorganic hybrid perovskites, with dramatic progress made in both the photovoltaic performance and device stability. Therefore, it has become the fastest growing photovoltaic research area. Perovskite materials use low-cost earth-abundant elements and can be solution-processed; furthermore, the technology is compatible with large-scale roll-to-roll manufacturing. Recently, the successful demonstration of the photovoltaic performance of perovskites reaching that of the commercialized monosilicon photovoltaic technology combined with the significantly improved stability has made scaling-up the perovskite PV technology to become a new research area, which is the topic of this review. First, the fundamental background knowledge of classical nucleation and crystal growth from a solution is summarized along with its application in perovskite film evolution. We then discuss the common perovskite PV device architectures and perovskite layer deposition methods, followed by summarizing scalable solution approaches with recent progress and related challenges for the scaling-up process. Upon the introduction of the current in-depth understanding of perovskite nucleation and crystal growth, external strategies (including both physical and chemical approaches) controlling the perovskite film formation are reviewed in diverse scalable manufacturing methods. Overall, aiming at overcoming the challenges of transferring from laboratory research, we provide an overview of achieving high-performance perovskite solar cells by using scalable fabrication methods via precise nucleation and crystal growth control during the perovskite film formation process.
89 citations
TL;DR: In this paper, the state-of-the-art metal halide perovskites (MHPs) based resistive switching (RS) memory devices and artificial synapses are discussed.
Abstract: Rapid progress of digital communications in the Big Data and Internet of things has stimulated the exploration of next-generation data storage devices. Among various candidates, resistive switching (RS) memory devices and artificial synapses are in the spotlight due to their low power consumption, downscaling potential, and fast operation speed. The exceptional electronic and mechanical characteristics of metal halide perovskites (MHPs) have greatly promoted their application in nonvolatile high density, low-cost, and flexible memory devices. Here, we distill the current state-of-the-art and highlight recent advances of MHP based RS memory devices and artificial synapses. The general structure and characteristics of RS memory devices are first introduced. Afterwards we discuss the excellent memory behaviors accompanied by detailed working mechanisms. Finally, the current challenges and future development prospects are also discussed. This review article is expected to pave the way in the rational design of MHP based memory devices and artificial synapses with unprecedented performance improvement.
67 citations
63 citations
TL;DR: In this article, the authors compared the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA)2Cs3Pb4I13, to those based on 3D CsPbI3.
Abstract: Resistive random-access memory (ReRAM) devices based on halide perovskites have recently emerged as a new class of data storage devices, where the switching materials used in these devices have attracted extensive attention in recent years. Thus far, three-dimensional (3D) halide perovskites have been the most investigated materials for resistive switching memory devices. However, 3D-based memory devices display ON/OFF ratios comparable to those of oxide or chalcogenide ReRAM devices. In addition, perovskite materials are susceptible to exposure to air. Herein, we compare the resistive switching characteristics of ReRAM devices based on a quasi-two-dimensional (2D) halide perovskite, (PEA)2Cs3Pb4I13, to those based on 3D CsPbI3. Astonishingly, the ON/OFF ratio of the (PEA)2Cs3Pb4I13-based memory devices (109) is three orders of magnitude higher than that of the CsPbI3 device, which is attributed to a decrease in the high-resistance state (HRS) current of the former. This device also retained a high ON/OFF current ratio for 2 weeks under ambient conditions, whereas the CsPbI3 device degraded rapidly and showed unreliable memory properties after 5 days. These results strongly suggest that quasi-2D halide perovskites have potential in resistive switching memory based on their desirable ON/OFF ratio and long-term stability. A type of computer memory that stores data by changing the resistance of insulating crystals can be made more durable with organic chemical additives. Resistive memory devices constructed from inorganic crystals known as halide perovskites are inexpensive and have minimal power requirements. However, they can degrade quickly in humid conditions. Hyojung Kim from Seoul National University in South Korea and colleagues now report that these stability issues can be improved by sandwiching thin layers of aromatic hydrocarbons between halide perovskite crystals. The water-repelling nature of the organic molecules helps double the lifespan of the new hybrid compared to an unmodified halide perovskite device. In addition, the organic layers augment the differences between ‘ON’ and ‘OFF’ resistive memory states, making device operation more reliable. ReRAM devices based on halide perovskites have recently emerged as a new class of data storage device, where the switching materials used in these devices have attracted huge attention in recent years. In this study, we compare the resistive switching characteristics of ReRAM devices based on a quasi-2D halide perovskite, (PEA)2Cs3Pb4I13, to those based on 3D CsPbI3. Astonishingly, the ON/OFF ratio of the (PEA)2Cs3Pb4I13-based memory devices was much higher than that of the CsPbI3 device. Also this device retained a high ON/OFF current ratio for two weeks under ambient conditions, whereas the CsPbI3 device degraded rapidly and showed unreliable memory properties after five days. We strongly believe that quasi-2D halide perovskites have potential in resistive switching memory based on their high ON/OFF ratio and long-term stability.
52 citations
References
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TL;DR: Two organolead halide perovskite nanocrystals were found to efficiently sensitize TiO(2) for visible-light conversion in photoelectrochemical cells, which exhibit strong band-gap absorptions as semiconductors.
Abstract: Two organolead halide perovskite nanocrystals, CH3NH3PbBr3 and CH3NH3PbI3, were found to efficiently sensitize TiO2 for visible-light conversion in photoelectrochemical cells. When self-assembled on mesoporous TiO2 films, the nanocrystalline perovskites exhibit strong band-gap absorptions as semiconductors. The CH3NH3PbI3-based photocell with spectral sensitivity of up to 800 nm yielded a solar energy conversion efficiency of 3.8%. The CH3NH3PbBr3-based cell showed a high photovoltage of 0.96 V with an external quantum conversion efficiency of 65%.
16,634 citations
TL;DR: In this article, a review describes the rapid progress that has been made in hybrid organic-inorganic perovskite solar cells and their applications in the photovoltaic sector.
Abstract: Within the space of a few years, hybrid organic–inorganic perovskite solar cells have emerged as one of the most exciting material platforms in the photovoltaic sector. This review describes the rapid progress that has been made in this area.
5,463 citations
TL;DR: A coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms into metal-insulator-metal systems, and a brief look into molecular switching systems is taken.
Abstract: Many metal–insulator–metal systems show electrically induced resistive switching effects and have therefore been proposed as the basis for future non-volatile memories. They combine the advantages of Flash and DRAM (dynamic random access memories) while avoiding their drawbacks, and they might be highly scalable. Here we propose a coarse-grained classification into primarily thermal, electrical or ion-migration-induced switching mechanisms. The ion-migration effects are coupled to redox processes which cause the change in resistance. They are subdivided into cation-migration cells, based on the electrochemical growth and dissolution of metallic filaments, and anion-migration cells, typically realized with transition metal oxides as the insulator, in which electronically conducting paths of sub-oxides are formed and removed by local redox processes. From this insight, we take a brief look into molecular switching systems. Finally, we discuss chip architecture and scaling issues.
4,547 citations
4,540 citations
TL;DR: It is found that the chemical and physical properties of these materials strongly depend on the preparation method, and the properties of the title hybrid materials with those of the "all-inorganic" CsSnI3 and CsPbI3 prepared using identical synthetic methods.
Abstract: A broad organic–inorganic series of hybrid metal iodide perovskites with the general formulation AMI3, where A is the methylammonium (CH3NH3+) or formamidinium (HC(NH2)2+) cation and M is Sn (1 and 2) or Pb (3 and 4) are reported. The compounds have been prepared through a variety of synthetic approaches, and the nature of the resulting materials is discussed in terms of their thermal stability and optical and electronic properties. We find that the chemical and physical properties of these materials strongly depend on the preparation method. Single crystal X-ray diffraction analysis of 1–4 classifies the compounds in the perovskite structural family. Structural phase transitions were observed and investigated by temperature-dependent single crystal X-ray diffraction in the 100–400 K range. The charge transport properties of the materials are discussed in conjunction with diffuse reflectance studies in the mid-IR region that display characteristic absorption features. Temperature-dependent studies show a ...
4,372 citations