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Journal ArticleDOI

Hall coefficient of thin films in a mean free path model

01 Nov 1978-Journal of Physics F: Metal Physics (IOP Publishing)-Vol. 8, Iss: 11, pp 2357-2365
TL;DR: In this paper, the Boltzmann transport equation was used to define an effective relaxation time for thin metallic films subjected to a transverse magnetic field, and analytical expressions were derived for the Hall coefficient and conductivity in the case of nearly specular scattering on external surfaces.
Abstract: Defining an effective relaxation time and then using the Boltzmann transport equation, analytical expressions have been derived, in the case of nearly specular scattering on external surfaces (p>or=0.5), for the Hall coefficient and conductivity in thin metallic films subjected to a transverse magnetic field. The results for moderately high magnetic field agree well with previous theoretical works; at low magnetic field the Hall coefficient in thin films is greater than the bulk value RH0 and becomes identical with RH0 in strong magnetic field. The theoretical predictions agree well with experimental data on copper and potassium thin films.
Citations
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Journal ArticleDOI
TL;DR: In this paper, the authors derived analytical expressions for the Hall coefficient and conductivity in thin polycrystalline metallic films subjected to a transverse magnetic field by using the Boltzmann transport equation.
Abstract: In polycrystalline films where three types of scattering processes (background, grainboundaries and external surfaces scatterings) are taking place at the same time an effective relaxation time is defined in the light of a three-dimensional model of grain-boundaries. Analytical expressions for the Hall coefficient and conductivity in thin polycrystalline metallic films subjected to a transverse magnetic field are then derived by using the Boltzmann transport equation. Previously published data can be theoretically interpreted in terms of the proposed model.

20 citations

Journal ArticleDOI
TL;DR: In this article, a three-dimensional grain boundary model is used to calculate the transport properties of fine-grained films where background and grain boundaries scattering processes occur simultaneously, and analytical expressions are easily derived for the Hall coefficient and conductivity in polycrystalline films subjected to a transverse magnetic field.

13 citations

Journal ArticleDOI
TL;DR: The transverse Hall coefficient of thin monocrystalline films was derived from the recently presented bidimensional conduction model by introducing a term in the Boltzmann equation representing the effective mean free path as discussed by the authors.
Abstract: The transverse Hall coefficient of thin monocrystalline filmsRHF is derived from the recently presented bidimensional conduction model by introducing a term in the Boltzmann equation representing the effective mean free path. Numerical evaluations ofRHF show that the size effect inRHF is less marked than that in resistivity and is much more sensitive to grain-boundary scattering than it is to external-surface scattering. Good agreement with the results from the previous experiments of several authors is found.

12 citations

Journal ArticleDOI
TL;DR: In this article, the authors derived theoretical expressions for the grain boundary conductivity, its TCR and the Hall coefficient, and showed that the relative grain boundary Hall coefficient is approximately equal to the product of the relative surface conductivity and the relative TCR in the limit of a small magnetic field.
Abstract: Starting from the three-dimensional model for grain boundary conductivity theoretical expressions for the conductivity, its TCR and the Hall coefficient are derived. In the limit of a small magnetic field the relative grain boundary Hall coefficient is approximately equal to the product of the relative grain boundary conductivity and the relative TCR.

11 citations

References
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Journal ArticleDOI
TL;DR: In this paper, the influence of a transverse magnetic field on the conduction properties of thin metallic films, of thickness comparable with the free path of conduction electrons, is investigated.
Abstract: The influence of a transverse magnetic field on the conduction properties of thin metallic films, of thickness comparable with the free path of the conduction electrons, is investigated. It is shown that, owing to scattering of electrons at the boundaries of the film, the Hall coefficient is increased, and the electrical resistance oscillates with the strength of the applied magnetic field.

264 citations

Journal ArticleDOI
TL;DR: In this article, the electrical conductivity of continuous thin metal films with very smooth surfaces is treated using Fuchs' model with Fuchs parameter p near 1, and it is shown that the surface scattering can be treated to a good approximation by a mean free path method.

119 citations

Journal ArticleDOI
TL;DR: In this paper, a critical analysis of the observed size effects in all cases depart markedly from the predictions of the Fuchs-Sondheimer theory (and also that of the Mayadas-Shatzkes theory which takes into account the grain boundary surface scattering).
Abstract: The thickness dependence at 300 and 80 K of the electrical resistivity and its temperature coefficient, Hall coefficient, mobility, and thermoelectric power of as‐deposited and annealed thin (< 1000 A) evaporated polycrystalline copper films and films deposited at elevated temperatures have been studied. All transport parameters in carefully prepared and well‐characterized films exhibit monotonically increasing size effects with decreasing film thickness. Both annealing and deposition at elevated temperatures cause considerable reduction of the ’’apparent’’ size effects in all the transport parameters of the room‐temperature deposited films. A critical analysis of the observed size effects shows that the data in all cases depart markedly from the predictions of the Fuchs‐Sondheimer theory (and also that of the Mayadas‐Shatzkes theory which takes into account the grain boundary surface scattering). The departure from theory is different for each transport parameter. The annealing studies show that the enhanced size effects are due to the presence of a large concentration of structural defects in the films. The observed behavior may be understood by assuming the large concentration of point and/or line defects to decrease with film thickness and with annealing as well as deposition of films at elevated temperatures. The thermopower data suggest strongly that the large concentration of defects causes distortion of the Fermi surface and thereby a strong energy dependence of the mfp or relaxation time at the Fermi surface.

89 citations

Journal ArticleDOI
TL;DR: In this paper, the dependence of the resistivity and the Hall effect of copper films on the method of film preparation and the film thickness has been studied before and after adsorption of carbon monoxide.

47 citations

Journal ArticleDOI
TL;DR: In this article, the residual electrical conductivity of aluminium films has been measured in a transverse magnetic field and the galvanomagnetic size effects were found to be in good qualitative agreement with the theories of Sondheimer and of MacDonald and Sarginson.
Abstract: The residual electrical conductivity of aluminium films has been measured in a transverse magnetic field. The galvanomagnetic size effects were found to be in good qualitative agreement with the theories of Sondheimer and of MacDonald and Sarginson.

44 citations