Hall mobility and carrier repopulation of n-type silicon at high electric fields
TL;DR: In this article, conductivity and Hall mobility characteristics of 5 ohm-cm n-type Si at room temperature for electric fields upto 10 kV/cm applied along the 〈111〉 and ͡100〉 directions are presented.
About: This article is published in Physics Letters A.The article was published on 1968-11-18. It has received 6 citations till now. The article focuses on the topics: Electric field & Population.
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TL;DR: In this article, the authors used a displaced Maxwell-Boltzmann distribution function and considering the permitted electron-phonon interactions experimental data have been fitted to the results obtained, and support the importance of intervalley scattering by low-energy LA phonons in agreement with Dumke, with Onton, and with previous results of the authors on non-ohmic mobility.
Abstract: The ohmic mobility of electrons affected only by lattice scattering has been investigated theoretically in Si. Using a displaced Maxwell-Boltzmann distribution function and considering the permitted electron-phonon interactions experimental data have been fitted to the results obtained. The results support the importance of intervalley scattering by low-energy LA phonons in agreement with Dumke, with Onton, and with previous results of the authors on non-ohmic mobility, and in disagreement with Long.
24 citations
TL;DR: In this article, the dc current density at 77 °K lattice temperature vs electric field for 26 −Ω cm n Si was analyzed to determine the amount of repopulation when the field is applied in the 〈100 à and à à ¼ Ã Þ Ã crystallographic directions, and a relatively simple and straight-forward technique for computing the energy relaxation time dependence on the electric field was proposed and applied to n Si.
Abstract: Measurements of the dc current density at 77 °K lattice temperature vs electric field for 26‐Ω cm n Si are presented and analyzed to determine the amount of repopulation when the field is applied in the 〈100〉 and 〈110〉 crystallographic directions. A relatively simple and straight‐forward technique for computing the energy‐relaxation‐time dependence on the electric field is proposed and applied to n Si. The electron temperatures vs electric field for several differently oriented conduction‐band minima are also calculated. An explanation for the previously observed but unexplained decrease in amount of repopulation above 400 V/cm is given. A new technique for computing the theoretical repopulation‐field dependence is also presented and found to give excellent agreement with the experimental results. A theory similar to that used in past literature, but more general, is used in the following experimental determination of the warm‐carrier repopulation in n Si.
12 citations
TL;DR: Theoretical and experimental investigations of the concentration dependence of mobility were carried out at T = 300 and 77 °K in the concentration range from 1012 up to 5 × 1017 cm−3.
Abstract: Theoretical and experimental investigations of the concentration dependence of mobility were carried out at T = 300 and 77 °K in the concentration range from 1012 up to 5 × 1017 cm−3. For non-oxidized, highly pure crystals of n-Si the experimental data are in good accordance with the theory, taking into account the lattice and impurity as well as intervalley scattering. The presence of high oxygen concentration in silicon samples results in a considerable decrease of the absolute mobility values fundamentally at diminished temperatures and small impurity concentrations. The observed decrease of mobility can not be explained by neutral impurity scattering of current carriers.
Theoretische und experimentelle Untersuchungen der Konzentrationsabhangigkeit der Beweglichkeit wurden bei T = 300 und 77 °K im Konzentrationsbereich von 1012 bis zu 5 × 1017 cm−3 durchgefuhrt. Fur nichtoxydierte, hochreine Kristalle von n-Si befinden sich die experimentellen Werte in guter Ubereinstimmung mit der Theorie, wobei sowohl die Gitter- und Storstellenstreuung als auch die Intertalstreuung berucksichtigt wurde. Ein hoher Sauerstoffgehalt der Siliziumproben ergibt ein betrachtliches Absinken der absoluten Beweglichkeitswerte, das grundsatzlich bei verringerten Temperaturen und kleinen Storstellenkonzentrationen stattfindet. Der beobachtete Abfall der Beweglichkeit last sich nicht durch Streuung der Ladungstrager an neutralen Storstellen erklaren.
9 citations
01 Jan 2002
TL;DR: In this article, the main physical concepts and experimental techniques used to study the electronic transport coefficients in the presence of an applied magnetic and/or electric field are discussed, and the effects of a magnetic field on electronic band levels may be evident in transport experiments under particular conditions.
Abstract: Publisher Summary The electrical performance of the semiconductor device and of the electrical circuit in which it is inserted depends on several factors: on how the carriers move—more or less freely—inside the semiconductor lattice. Electronic transport coefficients, such as the Hall coefficient, the mobility, the resistivity, impurity defects, and density not only allow the exploration of the fundamental physical properties of the investigated material but constitute the starting point for the design and fabrication of new and more reliable electronic devices. This chapter attempts to give an outlook on the main physical concepts and experimental techniques used to study the electronic transport coefficients in the presence of an applied magnetic and/or electric field. The effects of a magnetic field on electronic band levels may be evident in transport experiments under particular conditions. Landau's theory has shown that in the presence of a magnetic field the transverse components of the wave vector are quantized.
3 citations
TL;DR: In this paper, the high-field Hall mobility of n-type silicon has been studied by assuming the Maxwellian distribution function of the carriers in the valleys, and different values of inter-valley coupling constants have been used.
Abstract: The high-field Hall mobility of n-type silicon has been studied by assuming Maxwellian distribution function of the carriers in the valleys. Different values of inter-valley coupling constants have been used. It has been found that a good fit to the experimental results for the direction may be obtained by a proper choice of the inter-valley coupling constants. But even then there remain some discrepancies in the detailed characteristics.
2 citations
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TL;DR: In this article, measurements of the hot electron conductivity anisotropy (Shibuya-Sasaki effect) in silicon have been made at lattice temperatures of 77°K and 300°K for specimens with impurity concentrations from 1.8 × 10 14 cm −3 to 8.5 × l0 15 cm−3.
18 citations
TL;DR: The electric conductivity of n-type silicon was measured as a function of the field intensity in different crystallographic directions at temperatures between 78 and 275 °K as mentioned in this paper and the coefficients of Schmidt-Tiedemann's anisotropy theory were determined.
Abstract: The electric conductivity ofn-type silicon was measured as a function of the field intensity in different crystallographic directions at temperatures between 78 and 275 °K. From the data at medium fields (range of warm carriers) the coefficientsβ0 andγ0 ofSchmidt-Tiedemann's anisotropy theory were determined. Especially at low temperatures these coefficients are different for lightly and heavily doped crystals. The differences can be explained by the influence of ionized impurity scattering in addition to lattice scattering. The repopulation of the energy valleys of the conduction band as a function of the field intensity was calculated from the ratioγ0/β0 and — in the range of hot carriers — from the conductivities measured in and directions. A maximum increase of population of a cool valley was found to be between 0.5 and 1.2 of the zero-field population, depending on the particular sample, the field intensity being about 0.5 kV/cm and the lattice temperature 89 °K.
17 citations
TL;DR: In this article, the longitudinal magnetoresistance and Hall mobility of 5-Ω·cm n-type germanium have been measured for electric fields applied in the (111) direction up to 4 kV/cm.
Abstract: The longitudinal magnetoresistance and Hall mobility of 5‐Ω·cm n‐type germanium have been measured for electric fields applied in the (111) direction up to 4 kV/cm. It has been found that (i) longitudinal magnetoresistance at a particular electric field decreases with an increase in the magnetic field, (ii) for small magnetic fields the longitudinal magnetoresistance decreases with an increase in the electric field, and (iii) the Hall mobility and the ratio of Hall mobility to the conductivity mobility decrease with an increase in the electric field.The experimental value for fields above 1 kV/cm are found to agree with the theoretical values calculated with the assumptions that (i) the scattering is due to the acoustic, optical, and intervalley phonons, (ii) the average energy of the electrons is much larger than that of the optical phonons, (iii) the intervalley phonons affect only the carrier repopulation in the different valleys, and (iv) the value of the optical‐phonon deformation potential constant ...
6 citations