Hall mobility and electron trap density in GaAsN grown by liquid phase epitaxy
TL;DR: In this paper, the Hall mobility of GaAsN layers grown by liquid phase epitaxy (LPE) is studied as a function of the nitrogen content in the material, and it is observed that the parameter decreases with increasing nitrogen in the layer, in agreement with earlier theoretical predictions assuming scattering of electrons in nitrogen-related defects.
Abstract: The Hall mobility of GaAsN layers grown by liquid phase epitaxy (LPE) is studied as a function of the nitrogen content in the material. It is observed that the parameter decreases with increasing nitrogen in the layer, in agreement with earlier theoretical predictions assuming scattering of electrons in nitrogen-related defects. It is also found that the decrease in mobility is accompanied by a corresponding increase in the density of electron traps, believed to originate from different configurations of nitrogen defect centers. The observation clearly suggests that nitrogen-related defects are responsible for lowering the mobility in LPE-grown GaAsN.
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TL;DR: In this article, the liquid phase epitaxial growth of InAsN from indium rich solution is reported and the spectral properties of dilute bulk alloys containing N∼0.5% and which exhibit photoluminescence in the mid-infrared spectral range without any postgrowth annealing are described.
Abstract: We report on the liquid phase epitaxial growth of InAsN from indium rich solution. The spectral properties of dilute bulk alloys containing N∼0.5% and which exhibit photoluminescence in the midinfrared spectral range without any postgrowth annealing are described. The blueshift in the emission spectrum is attributed to a combination of tensile strain and band filling effects.
18 citations
TL;DR: In this article, the authors compared the spatial localization at the band edges due to various isovalent impurities in a host GaAs including its impact on the photoluminescence line widths and carrier mobilities.
Abstract: Electronic properties of III-V semiconductor alloys are examined using first principles with the focus on the spatial localization of electronic states. We compare localization at the band edges due to various isovalent impurities in a host GaAs including its impact on the photoluminescence line widths and carrier mobilities. The extremity of localization at the band edges is correlated with the ability of individual elements to change the band gap and the relative band alignment. Additionally, the formation energies of substitutional defects are calculated and linked to challenges associated with the growth and formability of alloys. A spectrally-resolved inverse participation ratio is used to map localization in prospective GaAs-based materials alloyed with B, N, In, Sb, and Bi for 1.55 $\mu$m wavelength telecommunication lasers. This analysis is complemented by a band unfolding of the electronic structure and discussion of implications of localization on the optical gain and Auger losses. Correspondence with experimental data on broadening of the photoluminescence spectrum and charge carrier mobilities show that the localization characteristics can serve as a guideline for engineering of semiconductor alloys.
17 citations
TL;DR: In this article, dilute InPN layers were grown by liquid phase epitaxy and characterized using high resolution x-ray diffraction, optical absorption, low temperature photoluminescence, and Hall measurement techniques.
Abstract: We have grown dilute InPN layers by liquid phase epitaxy and characterized them using high resolution x-ray diffraction, optical absorption, low temperature photoluminescence, and Hall measurement techniques. Our results indicate that a maximum amount of 0.2% nitrogen has been incorporated in the material with a band gap lowering consistent with expectations. The crystalline quality of the material is found to improve upon nitrogen incorporation. Large increase in luminescence from the material is observed after a high temperature annealing.
11 citations
24 Apr 2019
10 citations
TL;DR: In this paper, an optoelectronic compact circular polarimeter is proposed for electrical measurement of the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot.
Abstract: We propose and numerically simulate an optoelectronic compact circular polarimeter. It allows for electrical measurement of the degree of circular polarization and light intensity at room temperature for a wide range of incidence angles in a single shot. The device, being based on ${\mathrm{Ga}\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$, is easy to integrate into standard electronics and does not require bulky movable parts nor extra detectors. Its operation hinges mainly on two phenomena: the spin-dependent capture of electrons and the hyperfine interaction between bound electrons and nuclei on ${\mathrm{Ga}}^{2+}$ paramagnetic centers in ${\mathrm{Ga}\mathrm{As}}_{1\ensuremath{-}x}{\mathrm{N}}_{x}$. The first phenomenon confers the device with sensitivity to the degree of circular polarization and the latter phenomenon allows one to discriminate the handedness of the incident light.
4 citations
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TL;DR: In this paper, the optical properties of dilute GaAS1-xNx alloys have been reported and the authors assign the photoluminescence to band-edge transitions and not to isolated N-N pair emission.
Abstract: We present the first report on the optical properties of dilute GaAS1-xNx alloys (0
654 citations
TL;DR: In this paper, the main roadblock to the development of these solar cell devices is poor minority-carrier transport in the III-N-V materials, and the present understanding of the material properties of GaInNAs lattice matched to GaAs and GaNPAs matched to Si is reviewed.
Abstract: III–N–V semiconductors are promising materials for use in next-generation multijunction solar cells because these materials can be lattice matched to substrates such as GaAs, Ge and Si, with a range of bandgaps that are complementary to those of other III–V semiconductors. Several potentially high-efficiency multijunction photovoltaic device designs using III–N–V materials are discussed. The main roadblock to the development of these solar cell devices is poor minority-carrier transport in the III–N–V materials. The present understanding of the material properties of GaInNAs lattice matched to GaAs and GaNPAs lattice matched to Si is reviewed.
324 citations
TL;DR: In this paper, it was shown that in the epitaxial regime, a fully relaxed GaN phase cannot form prior to the spontaneous formation of a N-rich layer on the surface.
Abstract: Thermodynamic calculation suggests that the formation of bulk GaN pins N chemical potential mu(N)< or =mu(max)(N), resulting in low equilibrium N solubility [N] in bulk GaAs:N. In epitaxial growth, however, a fully relaxed GaN phase cannot form prior to the spontaneous formation of a N-rich layer on the surface. First-principles total-energy calculations show that in the epitaxial regime one can increase mu(max)(N) considerably from equilibrium mu(max)(N) without triggering the spontaneous formation of such a N-rich layer. This enhances [N] by 8 orders of magnitude to about 4% at T = 650 degrees C in agreement with experiments. The dominant defects at high N concentration are qualitatively different from those at low [N].
197 citations
TL;DR: In this article, the luminescence properties of epitaxial GaP containing atomic N grown by molecular beam epitaxy using NH3 and PH3 as the column V sources were conducted.
Abstract: A study of the luminescence properties of epitaxial GaP containing atomic N grown by molecular beam epitaxy using NH3 and PH3 as the column V sources was conducted. The 77 K photoluminescence spectra of the N‐doped epitaxial GaP showed a continuous redshift, from 5691 A (2.18 eV) to 6600 A (1.88 eV), resulted when the N concentration exceeded ∼5–7×1019 cm−3. This energy shift was found to be consistent with energy gap predictions using the dielectric theory of electronegativity for the GaP1−xNx system. The data also indicate that the emission intensity was maximum for N∼1×1020 cm−3, and then monotonically decreases with increasing N content. This is consistent with the formation of an indirect band‐gap semiconductor.
180 citations
TL;DR: In this article, electron and hole transport in compensated, InGaAsN ({approx} 2% N) was examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements.
Abstract: Electron and hole transport in compensated, InGaAsN ({approx} 2% N) are examined through Hall mobility, photoconductivity, and solar cell photoresponse measurements. Short minority carrier diffusion lengths, photoconductive-response spectra, and doping dependent, thermally activated Hall mobilities reveal a broad distribution of localized states. At this stage of development, lateral carrier transport appears to be limited by large scale (>> mean free path) material inhomogeneities, not a random alloy-induced mobility edge.
158 citations