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Journal ArticleDOI

Harmonic generation due to hot electrons in surface inversion layers

01 Feb 1980-Solid-state Electronics (Pergamon)-Vol. 23, Iss: 2, pp 127-128
TL;DR: In this article, the authors studied the effect of hot electron nonlinearity in Si-inversion layers at 77 K in the presence of a large high frequency signal on a drifted Maxwellian model and showed that the third harmonic content increases with increase in field amplitude but decreases to negligible values for frequencies of about 1000 GHz.
Abstract: Harmonic generation due to hot electron nonlinearity in Si-inversion layers at 77 K in the presence of a large high frequency signal is studied on a drifted Maxwellian model. The third harmonic content increases with increase in field amplitude but decreases to negligible values for frequencies of about 1000 GHz.
Citations
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Journal ArticleDOI
TL;DR: In this article, a simple 2D model of the hot carrier motion inside the MOSFET channel is proposed, which is used to evaluate the surface recombination velocity of VLSI MOS-FETs at strong narrow pulses.
Abstract: Hot carriers at the SiSiO 2 interface of MOSFETs play an important role in the modelling and characterisation of MOSFET devices especially if the MOSFET is derived by a strong narrow pulse. Hot carrier generation is always associated with an increased interface-state density. This results in a greater surface recombination velocity. The carrier mobility which is sensitive to channel fields will also be decreased. These effects become increasingly important as the trend towards progressively smaller MOSFET geometries is increased. A simple 2-D model of the hot carrier motion inside the MOSFET channel is proposed. This model is used to evaluate the surface recombination velocity dependence on the MOSFET geometry and biasing voltages. The model is, therefore, used to modify the current equations for VLSI MOSFET at strong narrow pulses. The carrier lifetime τ is used as a fitting parameter. The simulation results are in good agreement with the experimental measurements for devices with gate length ranging from 1.4 to 3 μm with applied gate pulse of 200 ns duration. For devices with gate length 5 μm and greater, the traditional MOSFET current equations give the same results as that derived for strong narrow pulsed MOSFETs.

11 citations

Journal ArticleDOI
TL;DR: In this article, a high-speed beam blanker and pattern generator was developed for writing high-resolution nanometer features in semiconductors, which is required to fabricate next-generation quantum scale devices, such as nanometer gate mini-FETs, lateral quantum-well arrays, or metal grid radiators, which have feature sizes from 100 nm (1000 A) to 15 nm (150 A).
Abstract: Electron-beam lithography that has the capability of writing high-resolution nanometer features in semiconductors will be required to fabricate next-generation quantum scale devices, such as nanometer gate mini-FET’s, lateral quantum-well arrays, or metal grid radiators,which have feature sizes from 100 nm (1000 A) to 15 nm (150 A). A Philips EM 420T scanning transmission, electron microscope (STEM) has been modified to write nanometersize features in gallium arsenide. For this STEM we have developed a high-speed beam blanker and pattern generator (PG) that is resist speed limited. The maximum writing field size is 100 by 100 micrometers; within this field size, the smallest addressable step is approximately 1.8 nm (18 A). A HP-9845 is used to supply data for the PG and for computer-aided design of the devices to be written. Pattern transfer from the resist to GaAs is completed by using the liftoff method. As a result of this capability, we have patterned more than one million dots in a prototype 80 by 80 micrometer solid state radiator. The dots have diameters down to 15 nm (150 A), which requires an e-beam writing time of less than 30 minutes.

2 citations

Journal ArticleDOI
TL;DR: In this article, an analytical modeling of surface recombination in ion-impalnted MOSFET device has been carried out considering a Guassian distribution impurity profile in the channel.
Abstract: An analytical modeling of surface recombination in ion-impalnted MOSFET device has been carried out considering a Guassian distribution impurity profile in the channel. The modeling is based on one-dimensional solution of the current density equation. The study indicates that surface recombination depends strongly on the diffusion coefficient of the carriers, as well as on the surface recombination velocity. A proper tailoring of the channel implant profile is necessary for minimizing the surface recombination.
References
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Journal ArticleDOI
Frank Stern1
TL;DR: In this article, self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$ -type silicon.
Abstract: Self-consistent results for energy levels, populations, and charge distributions are given for $n$-type inversion layers on $p$-type silicon. Quantum effects are taken into account in the effective-mass approximation, and the envelope wave function is assumed to vanish at the surface. Approximate analytic results are given for some special cases. Numerical results are given for representative surface orientations, bulk acceptor concentrations, inversion-layer electron concentrations, and temperatures.

987 citations

Journal ArticleDOI
TL;DR: In this paper, a displaced Maxwellian approximation for the electron distribution function was used to calculate the hot electron microwave conductivity of the wide bandgap semiconductors GaN, SiC and Diamond.
Abstract: Hot electron microwave conductivity of the wide bandgap semiconductors GaN, SiC and Diamond has been calculated using displaced Maxwellian approximation for the electron distribution function. The effects of both the energy and momentum relaxation times due to scattering by acoustical, optical intervalley phonons and by ionized impurities are included in the derivations. Numerical results for the microwave conductivity and the change in dielectric constant as a function of frequency and bias electric field are presented. It is found that significant change in the conductivity and dielectric constant contribution for a fixed bias field occurs at very high frequencies on the order of 10 12 Hz, which is well beyond the range of current microwave device interest.

137 citations

Journal ArticleDOI
TL;DR: In this article, the energy loss of the carriers to the lattice and the drift velocity or mobility are treated as two dimensional equations for both high and very low temperatures considering scattering by optical and acoustical phonons.
Abstract: Calculations of the carrier mobility of electrons and holes vs the electrical field strength E are presented. The calculations have been performed based on a Maxwellian distribution and taking into account a repopulation of carriers among different valleys in the case of n‐channel silicon inversion layers. The energy loss of the carriers to the lattice and the drift velocity or mobility are treated as two dimensional. Formulas for the energy loss are presented for both high and very low temperatures considering scattering by optical and acoustical phonons. The calculations are compared with experimental values given by Fang and Fowler and by Sato et al. Good agreement is found for the high‐temperature case using coupling constants as given by Sah et al. Quite large differences between theory and experiment appear at very low temperatures. The origin of these differences is discussed in a final section.

54 citations

Journal ArticleDOI
TL;DR: In this article, an experimental study was made of microwave frequency multiplication observed in germanium at power levels of several kW using a fundamental frequency of 9.4 Gc/sec, a third harmonic yield of about 1% was found.
Abstract: An experimental study is made of microwave frequency multiplication observed in germanium at power levels of several kW. Using a fundamental frequency of 9.4 Gc/sec, a third harmonic yield of about 1% was found. The data agree with calculations based on the observed deviations from Ohm's law. The anisotropy and the high frequency limit of the multiplication are calculated.

22 citations