Journal ArticleDOI
$\hbox{ZrO}_{2}$ -Based Memory Cell With a Self-Rectifying Effect for Crossbar WORM Memory Application
Qingyun Zuo,Shibing Long,S. Y. Yang,Qi Liu,Lubing Shao,Qin Wang,Sen Zhang,Yingtao Li,Yan Wang,Ming Liu +9 more
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TLDR
A memory cell based on n+-Si/ZrO2/Pt structure with self-rectifying properties is demonstrated for write-once-read-many-times (WORM) memory application and has potential application in high-density passive crossbar WORM memory.Abstract:
A memory cell based on n+-Si/ZrO2/Pt structure with self-rectifying properties is demonstrated for write-once-read-many-times (WORM) memory application. The fresh devices can be set to a low resistance state (LRS) as an antifuse and keep in LRS permanently with a rectification ratio exceeding 104. The memory devices show a large on/off ratio of about 106 and narrow resistance distributions before and after programming. The different transport mechanisms of forward and reverse currents are studied, which are responsible for this reliable self-rectifying characteristic. The demonstrated memory cell with self-rectifying properties has potential application in high-density passive crossbar WORM memory.read more
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Journal ArticleDOI
A Functional Hybrid Memristor Crossbar-Array/CMOS System for Data Storage and Neuromorphic Applications
Kuk-Hwan Kim,Siddharth Gaba,Dana C. Wheeler,Jose Cruz-Albrecht,Tahir Hussain,Narayan Srinivasa,Wei Lu +6 more
TL;DR: A high-density, fully operational hybrid crossbar/CMOS system composed of a transistor- and diode-less memristor crossbar array vertically integrated on top of a CMOS chip by taking advantage of the intrinsic nonlinear characteristics of the Memristor element.
Journal ArticleDOI
Access devices for 3D crosspoint memorya)
Geoffrey W. Burr,R. S. Shenoy,Kumar Virwani,Pritish Narayanan,Alvaro Padilla,B. N. Kurdi,Hyunsang Hwang +6 more
TL;DR: Progress made toward implementing access device functionality for crosspoint memory arrays is reviewed, focusing on the need to stack such crosspoint arrays vertically above the surface of a silicon wafer for increased effective areal density.
Journal ArticleDOI
Three-dimensional crossbar arrays of self-rectifying Si/SiO 2 /Si memristors
Can Li,Lili Han,Lili Han,Lili Han,Hao Jiang,Moon-Hyung Jang,Peng Lin,Qing Wu,Mark Barnell,Jianhua Yang,Huolin L. Xin,Qiangfei Xia +11 more
TL;DR: A fully foundry-compatible, all-silicon-based and self-rectifying memristor that negates the need for external selectors in large arrays, and exhibits repeatable unipolar resistance switching behaviour and excellent retention at 300 °C is demonstrated.
Journal ArticleDOI
Nanoscale RRAM-based synaptic electronics: toward a neuromorphic computing device.
Sangsu Park,Jinwoo Noh,Myung Lae Choo,Ahmad Muqeem Sheri,Man Chang,Young-Bae Kim,Chang Jung Kim,Moongu Jeon,Byung-Geun Lee,Byoung Hun Lee,Hyunsang Hwang +10 more
TL;DR: The fabrication, modeling and implementation of nanoscale RRAM with multi-level storage capability for an electronic synapse device is reported and the learning capabilities and predictable performance by a neuromorphic circuit composed of a nanoscales 1 kbit RRAM cross-point array of synapses and complementary metal-oxide-semiconductor neuron circuits are experimentally demonstrated.
Journal ArticleDOI
Physical Mechanism and Performance Factors of Metal Oxide Based Resistive Switching Memory: A Review
TL;DR: In this article, the authors have summarized the mechanism and performance of metal oxide based resistive switching memory, which considers the migration of metallic cations and oxygen vacancies, as well as discuss two main mechanisms including the electrochemical metallization effect and valence change memory effect (VCM).
References
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Journal ArticleDOI
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Peter Mark,Wolfgang Helfrich +1 more
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Journal ArticleDOI
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Proceedings ArticleDOI
Multi-layer cross-point binary oxide resistive memory (OxRRAM) for post-NAND storage application
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Journal ArticleDOI
Is There an Immortal Memory
TL;DR: The search for a fast, inexpensive memory technology that retains data even when the power is off has identified several interesting avenues that are being actively pursued, but the real-world challenges are severe, and proponents of nonvolatile memory need to take a hard look at the practical realities before declaring success.
Journal ArticleDOI
Trap-limited hole mobility in semiconducting poly(3-hexylthiophene)
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