scispace - formally typeset
Search or ask a question
Journal ArticleDOI

Heavy ion irradiation induced effects in Ni3N/Al bilayers

TL;DR: In this article, the Xe ion beam irradiation studies of Ni3N/Al bilayers at 80 K were performed and the ion-induced modifications were monitored by Rutherford backscattering (RBS), resonant nuclear reaction analysis (RNRA), X-ray diffraction (XRD) and atomic force microscopy (AFM).
Abstract: The article reports on the Xe ion beam irradiation studies of Ni3N/Al bilayers at 80 K. The ion-induced modifications were monitored by Rutherford backscattering (RBS), resonant nuclear reaction analysis (RNRA), X-ray diffraction (XRD) and atomic force microscopy (AFM). We found preferential loss of nitrogen from the surface region of the Ni3N top layers. The surface roughness ΔσS and the interface broadening variance Δσint2 increase linearly with the Xe ion fluence Φ. The experimental mixing rate of Δσ 2 /Φ=1.8 nm 4 is explained by considering an enhancement of ballistic mixing due to chemical reactions at the interface.
Citations
More filters
Journal ArticleDOI
TL;DR: A review of ion beam modifications at various solids, thin films, and multilayered systems covering wider energy ranges including the older basic concepts is given in this paper. But the results reveal that the ion-solid interaction physics provides a unique way for controlling the produced defects of the desired type at a desired location.

242 citations

Journal ArticleDOI
11 Aug 2009-Vacuum
TL;DR: In this article, the irradiation effect in Ni 3 N/Si bilayers induced by 100 MeV Au ions at fluence 1.5 × 10 14 ǫ cm 2 was investigated at room temperature.

12 citations

11 Aug 2009
TL;DR: In this article, the irradiation effect in Ni 3 N/Si bilayers induced by 100 MeV Au ions at fluence 1.5 × 10 14 ions/cm 2 was investigated at room temperature.
Abstract: The irradiation effect in Ni 3 N/Si bilayers induced by 100 MeV Au ions at fluence 1.5 × 10 14 ions/cm 2 was investigated at room temperature. Grazing incidence X-ray diffraction determined the formation of Ni 2 Si and Si 3 N 4 phases at the interface. The roughness of the thin film was measured by atomic force microscopy. X-ray reflectivity was used to measure the thickness of thin films. X-ray photoelectron spectroscopy has provided the elemental binding energy of Ni 3 N thin films. It was observed that after irradiation (Ni 2p 3/2 ) peak shifted towards a lower binding energy. Optical properties of nickel nitride films, which were deposited onto Si (100) by ion beam sputtering at vacuum 1.2 × 10 -4 torr, were examined using Au ions. In-situ I-V measurements on Ni 3 N/Si samples were also undertaken at room temperature which showed that there is an increase in current after irradiation.

12 citations

Journal ArticleDOI
TL;DR: In this article, the authors studied atomic transport and phase formation induced by 22-keV 14N2+ ion implantation in 57Fe(30nm)/Si bilayers at high fluences.
Abstract: In the course of a systematic investigation of heavy ion-irradiated Fe/Si layers, we have studied atomic transport and phase formation induced by 22-keV 14N2+ ion implantation in 57Fe(30 nm)/Si bilayers at high fluences. We report here results obtained by Rutherford backscattering spectroscopy, X-ray diffraction, and conversion electron Mossbauer spectroscopy after implantation and post-implantation annealing treatments. The irradiations caused little sputtering, but significant interface mixing. During implantation, iron nitrides, but no silicides were formed, even at the highest nitrogen fluence of 2×1017 ions/cm2. When heating these samples in vacuo up to 700 °C, the iron-rich phases e-Fe3N and γ′-Fe4N were produced. Starting at 600 °C the silicide phase β-FeSi2 was also identified.

7 citations

Journal ArticleDOI
TL;DR: In this paper, swift heavy ion induced modifications on magnetic, morphological and electronic transport properties of CoFe/n-Si bilayers were investigated, which revealed the interfacial intermixing across the interface upon irradiation to result in the formation of magnetic silicide phases with enhanced crystallite size.

1 citations

References
More filters
Book
J.P. Biersack, James F. Ziegler1
01 Aug 1985
TL;DR: A review of existing widely-cited tables of ion stopping and ranges can be found in this paper, where a brief exposition of what can be determined by modern calculations is given.
Abstract: The stopping and range of ions in matter is physically very complex, and there are few simple approximations which are accurate. However, if modern calculations are performed, the ion distributions can be calculated with good accuracy, typically better than 10%. This review will be in several sections: a) A brief exposition of what can be determined by modern calculations. b) A review of existing widely-cited tables of ion stopping and ranges. c) A review of the calculation of accurate ion stopping powers.

10,060 citations

Journal ArticleDOI
TL;DR: The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for different Er-doped thin film photonic materials.
Abstract: Erbium doped materials are of great interest in thin film integrated optoelectronic technology, due to their Er3+ intra-4f emission at 1.54 μm, a standard telecommunication wavelength. Er-doped dielectric thin films can be used to fabricate planar optical amplifiers or lasers that can be integrated with other devices on the same chip. Semiconductors, such as silicon, can also be doped with erbium. In this case the Er may be excited through optically or electrically generated charge carriers. Er-doped Si light-emitting diodes may find applications in Si-based optoelectronic circuits. In this article, the synthesis, characterization, and application of several different Er-doped thin film photonic materials is described. It focuses on oxide glasses (pure SiO2, phosphosilicate, borosilicate, and soda-lime glasses), ceramic thin films (Al2O3, Y2O3, LiNbO3), and amorphous and crystalline silicon, all doped with Er by ion implantation. MeV ion implantation is a technique that is ideally suited to dope these materials with Er as the ion range corresponds to the typical micron dimensions of these optical materials. The role of implantation defects, the effect of annealing, concentration dependent effects, and optical activation are discussed and compared for the various materials.

1,089 citations

Journal ArticleDOI
TL;DR: In this paper, nonlinear least squares techniques have been applied to Rutherford backscattering spectrometry (RBS), allowing routine multivariable fits of simulated spectra to experimental data.
Abstract: Nonlinear least squares techniques have been applied to Rutherford backscattering spectrometry (RBS), allowing routine multivariable fits of simulated spectra to experimental data. Once a qualitatively correct simulation is made, this algorithm varies parameters of the simulation to obtain quantitative results. Optimization is done according to a maximum likelihood chi-squared definition, so that the best fit values of parameters and their uncertainties can be determined. Convergence of the algorithm is rapid for practical problems, allowing a typical four-variable fit to be accomplished in 30 seconds on a VAX 11/750. This algorithm allows confident treatment of spectra which might otherwise be considered too complex. An implementation of the algorithm is incorporated as part of an RBS analysis and simulation package, making it readily available for routine RBS analysis.

937 citations

Journal ArticleDOI
TL;DR: In this paper, the gamma ray yield function of (p, αγ) and resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen.
Abstract: Gamma ray yield functions of (p, αγ) and (p, γ) resonance reactions on semi-thick 19F, 23Na, 24,26Mg and 27Al targets were measured and used to calibrate the accelerating voltage and energy resolution of the new 500 kV heavy ion implanter at Gottingen. The energy spread of the proton beam was found to vary linearly with the accelerating voltage from ΔE(200 keV) = 55 eV fwhm to ΔE(500 keV) = 105 eV; it is made up by a 0.012% high voltage ripple and the Doppler broadening of the resonances due to the thermal motion of the target nuclei. A long term stability of the proton energy of Applications of the accelerator for the remeasurement of some resonance energies and widths and for depth profiling of light implanted ions in metals by the resonance broadening method will be briefly discussed.

293 citations

Journal ArticleDOI
TL;DR: In this paper, the authors review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed.
Abstract: General trends in integrated circuit technology toward smaller device dimensions, lower thermal budgets, and simplified processing steps present severe physical and engineering challenges to ion implantation. These challenges, together with the need for physically based models at exceedingly small dimensions, are leading to a new level of understanding of fundamental defect science in Si. In this article, we review the current status and future trends in ion implantation of Si at low and high energies with particular emphasis on areas where recent advances have been made and where further understanding is needed. Particularly interesting are the emerging approaches to defect and dopant distribution modeling, transient enhanced diffusion, high energy implantation and defect accumulation, and metal impurity gettering. Developments in the use of ion beams for analysis indicate much progress has been made in one-dimensional analysis, but that severe challenges for two-dimensional characterization remain. The ...

266 citations