Heterojunction valence-band-discontinuity dependence on face orientation
About: This article is published in Physical Review B.The article was published on 1987-04-15. It has received 21 citations till now. The article focuses on the topics: Discontinuity (geotechnical engineering) & Heterojunction.
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TL;DR: In this paper, the occurrence of quantum dipoles at layered materials semiconductor heterointerfaces was investigated by photoemission spectroscopy (PES), and the valence band offset was determined by careful evaluation of the PES data as a function of the film thickness.
Abstract: The occurrence of quantum dipoles at layered materials semiconductor heterointerfaces was investigated by photoemission spectroscopy (PES). Due to the unique properties of layered compounds the prepared interfaces are essentially free of the structural problems known from the usually investigated heterosystems composed of III–V, IV or II–VI materials allowing the detailed investigation of electronic phenomena at the interfaces. We investigated heterostructures composed of epitaxial layers of SnS2 and SnSe2 on different single crystalline layered chalcogenide substrates (WSe2, MoS2, MoTe2, and GaSe). The epilayers were grown by van der Waals epitaxy (vdWe) on the (0001) plane of the substrate crystals. For every system the valence band offset was determined by careful evaluation of the PES data as a function of the film thickness. Using published values for the band gaps and the experimentally determined work functions and surface potentials the band lineup for each system was determined. The band offsets ...
198 citations
TL;DR: In this paper, the effect of strain on the band lineups alignments in strained heterostructures is discussed deeply, and the attention is focused on the most important results obtained by several groups in the characterization of semiconductor heterometructures using the following structural SR techniques.
103 citations
TL;DR: The analysis provides a new estimate of the band gap of zinc Blende CdSe as well as the band offsets in zinc blende and wurtzite C dSe, CdS, and ZnSe, and it is analyzed within an effective mass model.
Abstract: The interband and intraband spectra of colloidal II-VI CdS and CdSe quantum dot cores and CdS∕ZnSe, CdS∕CdSe, CdSe∕CdS, and CdSe∕ZnSe core/shell systems are reported. Infrared absorption peaks between 0.5 and 0.2eV are observed. The slope of the intraband energy versus the first interband absorption feature is characteristic of the relative band alignments of the materials constituting the core and the shell and it is analyzed within an effective mass model. The analysis provides a new estimate of the band gap of zinc blende CdSe as well as the band offsets in zinc blende and wurtzite CdSe, CdS, and ZnSe.
89 citations
TL;DR: In this article, a perspective of the theoretical effort made to understand semiconductor interface formation within the induced density of interface states model is presented, and the formation of the junction as a function of the surface coverage is analyzed and shown to be completed with the deposition of one or two layers.
30 citations
TL;DR: In this article, the authors used high-resolution synchrotron radiation photoemission spectroscopy measurements to determine the valence band offset of ZnTe/GaAs heterojunctions.
Abstract: ZnTe films have been grown on GaAs substrate by metalorganic vapor phase epitaxy. High-resolution synchrotron radiation photoemission spectroscopy measurements are used to determine the valence band offset of ZnTe/GaAs heterojunctions. Based on the binding energies of Zn 3d and Ga 3d core levels and valence band maximum values, the valence band offset has been determined to be 0.19 eV for ZnTe/GaAs heterojunction. The heterojunction shows type I band configuration with a conduction band offset of 0.65 eV. The accurate determination of the band alignment of ZnTe/GaAs heterojunction facilitates the design of optical and electronic devices based on ZnTe/GaAs structure.
14 citations