Journal ArticleDOI
Hierarchical 2-D DD and HD noise simulations of Si and SiGe devices II. Results
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TLDR
In this paper, Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup+/ and P/sup plus/ PP/Sup +/ structures and a realistic two-dimensional SiGe NPN HBT were investigated.Abstract:
For pt. I see ibid., vol. 49, pp. 1250-1257 (2002). Terminal current noise is investigated with Langevin-type drift-diffusion (DD) and hydrodynamic (HD) noise models for one-dimensional (1-D) N/sup +/ NN/sup +/ and P/sup +/ PP/sup +/ structures and a realistic two-dimensional (2-D) SiGe NPN HBT. The new noise models, which are suitable for technology computer aided design (TCAD), are validated by comparison with Monte Carlo (MC) device simulations for the 1-D structures including noise due to particle scattering and generation of secondary particles by impact ionization (II). It is shown that the accuracy of the usual approach based on the DD model in conjunction with the Einstein relation degrades under nonequilibrium conditions. 2-D MC noise simulations are found to be feasible only if the current correlation functions decay on a subpicosecond scale, what is not always the case.read more
Citations
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Noise in SiGe HBT RF Technology: Physics, Modeling, and Circuit Implications
TL;DR: The physics, modeling, and circuit implications of RF broad-band noise, low-frequency noise, and oscillator phase noise in SiGe heterojunction bipolar transistor (HBT) RF technology are presented and the implications of SiGe profile design, transistor sizing, biasing, and technology scaling are examined.
Journal ArticleDOI
A fully coupled scheme for a Boltzmann-Poisson equation solver based on a spherical harmonics expansion
TL;DR: In this article, the numerical properties of a deterministic Boltzmann equation solver based on a spherical harmonics expansion of the distribution function are analyzed and improved, where stable equations are obtained based on the H-transformation.
Journal ArticleDOI
High-frequency noise in nanoscale metal oxide semiconductor field effect transistors
TL;DR: In this paper, the noise characteristics of short-channel devices are shown to have a better resemblance to ballistic devices than to long-channel metal oxide semiconductor field effect transistors (MOSFETs).
Journal ArticleDOI
Physics-based simulation techniques for small- and large-signal device noise analysis in RF applications
TL;DR: In this article, a review on physics-based noise simulation techniques for RF semiconductor devices, starting with the small-signal case but with greater stress on noise in large signal (quasi-periodic operation), is presented.
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A Deterministic Approach to RF Noise in Silicon Devices Based on the Langevin–Boltzmann Equation
TL;DR: In this paper, a new deterministic approach to electron noise based on a spherical harmonics expansion (SHE) of the Langevin-Boltzmann equation in the frequency domain is presented for silicon devices.
References
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TL;DR: This chapter discusses the concept of a Random Variable, the meaning of Probability, and the axioms of probability in terms of Markov Chains and Queueing Theory.
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Probability, random variables, and stochastic processes
TL;DR: In this paper, the meaning of probability and random variables are discussed, as well as the axioms of probability, and the concept of a random variable and repeated trials are discussed.
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TL;DR: The general nature of Monte Carlo methods can be found in this paper, where a short resume of statistical terms is given, including random, pseudorandom, and quasirandom numbers.
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Analysis and simulation of semiconductor devices
TL;DR: The history of numerical device modeling can be traced back to the early 1970s as mentioned in this paper, when the basic Semiconductor Equations were defined and the goal of modeling was to identify the most fundamental properties of numerical devices.