High breakdown voltage AlGaN-GaN power-HEMT design and high current density switching behavior
Citations
855 citations
Cites background from "High breakdown voltage AlGaN-GaN po..."
...Most of the reported AlGaN/GaN HFETs are the normally-on type taking advantage of the inherent high sheet carrier density caused by the built-in polarization electric field [1], [ 2 ]....
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629 citations
516 citations
Cites background from "High breakdown voltage AlGaN-GaN po..."
...Whereas most of the AlGaN/GaN HEMTs demonstrated so far had normally on (depletion mode) characteristics with gate threshold voltage under V [6], [7], normally off (enhancement mode) characteristics are strongly required for...
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446 citations
Cites background from "High breakdown voltage AlGaN-GaN po..."
...Breakdown voltages as high as 900 V with low ON-resistance Ron have been demonstrated by using multiple field plates [2] and backside field plate [3]....
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348 citations
References
507 citations
"High breakdown voltage AlGaN-GaN po..." refers background in this paper
...OWER SEMICONDUCTOR switching devices with breakdown voltages of several hundred volts have been studied with a view to reducing the power loss for switching mode power supplies and inverter systems [ 1 ]....
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473 citations
"High breakdown voltage AlGaN-GaN po..." refers background in this paper
...For more dramatic reduction of the on-resistance, AlGaN‐GaN heterostructure devices are attractive, due to high carrier mobility in two-dimensional electron gas (2DEG) channel and large critical electric field [ 4 ]‐[6]....
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464 citations
"High breakdown voltage AlGaN-GaN po..." refers background in this paper
...In addition, superjunction MOSFETs have broken through the Si-limit and achieved the on-resistance of 35 m cm for 600-V class devices [ 3 ]....
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352 citations
"High breakdown voltage AlGaN-GaN po..." refers result in this paper
...Fig. 3(a) shows the relation between the breakdown voltage and the field plate length . Although the crystal quality and surface state were not especially improved in the fabricated device, the simulation results show good agreement with the experimental results, and the relation between the breakdown voltage and shows same tendency with the previous experimental results [ 13 ]....
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344 citations
"High breakdown voltage AlGaN-GaN po..." refers background or result in this paper
...Since the source/drain contact area dominates the fabricated device area, the on-resistance was larger than the previous reported data [7], [ 8 ]....
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...The field plate is placed over the gate electrode and the edge of the field plate must be closer to the drain than the gate electrode edge so that the electric field concentration near the gate edge is efficiently eased and the electric field rather uniformly distributes between gate and drain electrodes [ 8 ]....
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