Journal ArticleDOI
High-Efficiency Envelope-Tracking W-CDMA Base-Station Amplifier Using GaN HFETs
Donald F. Kimball,Jinho Jeong,Chin Hsia,Paul Draxler,Sandro Lanfranco,W. Nagy,K. Linthicum,Lawrence E. Larson,Peter M. Asbeck +8 more
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In this paper, a high-efficiency wideband code-division multiple access (W-CDMA) base station amplifier is presented using high-performance GaN heterostructure field effect transistors to achieve high gain and efficiency with good linearity.Abstract:Â
A high-efficiency wideband code-division multiple-access (W-CDMA) base-station amplifier is presented using high-performance GaN heterostructure field-effect transistors to achieve high gain and efficiency with good linearity For high efficiency, class J/E operation was employed, which can attain up to 80% efficiency over a wide range of input powers and power supply voltages For nonconstant envelope input, the average efficiency is further increased by employing the envelope-tracking architecture using a wide-bandwidth high-efficiency envelope amplifier The linearity of overall system is enhanced by digital pre-distortion The measured average power-added efficiency of the amplifier is as high as 507% for a W-CDMA modulated signal with peak-to-average power ratio of 767 dB at an average output power of 372 W and gain of 100 dB We believe that this corresponds to the best efficiency performance among reported base-station power amplifiers for W-CDMA The measured error vector magnitude is as low as 174% with adjacent channel leakage ratio of -510 dBc at an offset frequency of 5 MHzread more
Citations
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Journal ArticleDOI
A Simplified Broadband Design Methodology for Linearized High-Efficiency Continuous Class-F Power Amplifiers
TL;DR: In this paper, the authors describe the design approach employed for achieving approximated continuous Class-F power amplifier (PA) modes over wide bandwidths, where the importance of the nonlinear device capacitance for wave-shaping the continuous class-F voltage and current waveforms is highlighted, thus reducing the device sensitivity to second and third harmonic impedance terminations.
Journal ArticleDOI
A High-Efficiency 100-W GaN Three-Way Doherty Amplifier for Base-Station Applications
TL;DR: In this paper, a three-way Doherty 100-W GaN power amplifier at 2.14 GHz was presented, where mixed-signal techniques were utilized for uncompromised control of the amplifier stages to optimize efficiency, as well as linearity.
Journal ArticleDOI
Physically Inspired Neural Network Model for RF Power Amplifier Behavioral Modeling and Digital Predistortion
Farouk Mkadem,Slim Boumaiza +1 more
TL;DR: A novel two hidden layers artificial neural network (2HLANN) model is proposed to predict the dynamic nonlinear behavior of wideband RF power amplifiers (PAs) and its accuracy in predicting its output spectrum, dynamic AM/AM and AM/PM characteristics, and in minimizing the normalized mean square error is validated.
Journal ArticleDOI
Digital Predistortion for Envelope-Tracking Power Amplifiers Using Decomposed Piecewise Volterra Series
TL;DR: In this paper, a piecewise Volterra model based on a vector threshold decomposition technique was introduced to compensate the distortion induced by power amplifiers by employing conventional digital predistortion techniques.
Journal ArticleDOI
A 90-W Peak Power GaN Outphasing Amplifier With Optimum Input Signal Conditioning
J.H. Qureshi,M.J. Pelk,M. Marchetti,W.C.E. Neo,J.R. Gajadharsing,M.P. van der Heijden,L.C.N. de Vreede +6 more
TL;DR: In this paper, an improved GaN outphasing amplifier with 50.5% average efficiency for wideband code division multiple access (W-CDMA) signals is presented.
References
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Book
RF Power Amplifiers for Wireless Communications
TL;DR: In this paper, the authors present a power amplifier design for GHz frequency bands at GHz GHz frequency band with overdrive and overdrive-only overdrive modes, as well as a switch-mode Amplifier for RF applications.
Proceedings ArticleDOI
RF power amplifiers for wireless communications
TL;DR: In this paper, the performance and other attributes of cellphone RF power amplifiers using Si and GaAs based technologies are reviewed and compared, and a wide variety of semiconductor devices are used in wireless power amplifier.
Journal ArticleDOI
An Improved Power-Added Efficiency 19-dBm Hybrid Envelope Elimination and Restoration Power Amplifier for 802.11g WLAN Applications
Feipeng Wang,Donald F. Kimball,J.D. Popp,A.H. Yang,Donald Y.C. Lie,Peter M. Asbeck,Lawrence E. Larson +6 more
TL;DR: In this paper, a hybrid wideband EER power amplifier for the WLAN 802.11g system is proposed, which shows an overall efficiency of 36% and power-added efficiency of 28% for a WLAN IEEE 802.15.4 signal at 19dBm (80 mW) output power at 2.4 GHz.
Journal ArticleDOI
Design of wide-bandwidth envelope-tracking power amplifiers for OFDM applications
Abstract: An efficiency-enhanced power-amplifier system design is presented based on wide-bandwidth envelope tracking (WBET) with application to orthogonal frequency-division multiplexing wireless local area network systems. Envelope elimination and restoration (EER) and WBET are compared in terms of the time mismatch sensitivity between the base-band amplitude path and the RF path, and it is demonstrated that WBET is much less sensitive than EER to these effects. An adaptive time-alignment algorithm for the WBET system is developed and demonstrated. The analysis and algorithm are verified by experimental results. The measurement shows that the peak drain efficiency of the complete system was 30% at a 2.4-GHz orthogonal frequency-division multiplexing output power of 20 dBm.
Journal ArticleDOI
Intermodulation distortion in Kahn-technique transmitters
TL;DR: The relationship between parameters such as the bandwidth of the envelope modulator and the differential delay between envelope and phase signals and IMD levels is determined and the results can be used to determine the requirements for the components of a Kahn-technique transmitter.