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High-field electrical transport in single-wall carbon nanotubes

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TLDR
The intrinsic high-field transport properties of metallic single-wall carbon nanotubes are measured using low-resistance electrical contacts and it is shown that the current-voltage characteristics can be explained by considering optical or zone-boundary phonon emission as the dominant scattering mechanism at high field.
Abstract
Using low-resistance electrical contacts, we have measured the intrinsic high-field transport properties of metallic single-wall carbon nanotubes. Individual nanotubes appear to be able to carry currents with a density exceeding 10(9) A/cm(2). As the bias voltage is increased, the conductance drops dramatically due to scattering of electrons. We show that the current-voltage characteristics can be explained by considering optical or zone-boundary phonon emission as the dominant scattering mechanism at high field.

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Journal ArticleDOI

Carbon Nanotubes--the Route Toward Applications

TL;DR: Many potential applications have been proposed for carbon nanotubes, including conductive and high-strength composites; energy storage and energy conversion devices; sensors; field emission displays and radiation sources; hydrogen storage media; and nanometer-sized semiconductor devices, probes, and interconnects.
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Raman spectroscopy of graphene and graphite: Disorder, electron phonon coupling, doping and nonadiabatic effects

TL;DR: In this article, the authors focus on the origin of the D and G peaks and the second order of D peak and show that the G and 2 D Raman peaks change in shape, position and relative intensity with number of graphene layers.
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Ballistic carbon nanotube field-effect transistors

TL;DR: It is shown that contacting semiconducting single-walled nanotubes by palladium, a noble metal with high work function and good wetting interactions with nanotube, greatly reduces or eliminates the barriers for transport through the valence band of nanot tubes.
Journal ArticleDOI

Controlling the Electronic Structure of Bilayer Graphene

TL;DR: In this paper, the authors describe the synthesis of bilayer graphene thin films deposited on insulating silicon carbide and report the characterization of their electronic band structure using angle-resolved photoemission.
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Intrinsic and extrinsic performance limits of graphene devices on SiO2.

TL;DR: It is shown that electron-acoustic phonon scattering is indeed independent of n, and contributes only 30 Omega to graphene's room-temperature resistivity, and its magnitude, temperature dependence and carrier-density dependence are consistent with extrinsic scattering by surface phonons at the SiO2 substrate.
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Science of fullerenes and carbon nanotubes

TL;DR: In this paper, the authors present a detailed overview of the properties of Fullerenes and their properties in surface science applications, such as scanning tunnel microscopy, growth and fragmentation studies, and chemical synthesis.
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