Journal ArticleDOI
High-performance Ge-on-Si photodetector with optimized DBR location
Jishi Cui,Zhiping Zhou +1 more
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TLDR
The Ge-on-Si photodetector's performance enhancement by optimizing the detector length, therefore, the location of the distributed Bragg reflector (DBR) will result in shorter devices, with increased bandwidth, reduced dark current, and consistent responsivity.Abstract:
We investigated the Ge-on-Si photodetector’s performance enhancement by optimizing the detector length, therefore, the location of the distributed Bragg reflector (DBR). Since the unabsorbed signal light in the photodetector oscillates between the germanium and silicon layers, but the DBR is on the silicon layer, the optimized location of the DBR will result in shorter devices, with increased bandwidth, reduced dark current, and consistent responsivity. The 5 μm long photodetector with an optimized DBR location shows responsivity of 0.72 A/W, at least 31.7 GHz 3 dB bandwidth; the dark current is only 7 nA at 1550 nm.read more
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Journal ArticleDOI
On-chip silicon photonic signaling and processing: a review
Jian Wang,Yun Long +1 more
TL;DR: The advances in on-chip silicon photonic signaling and processing with favorable performance pave the way to integrate complete optical communication systems on a monolithic chip and integrate silicon photonics and silicon nanoelectronics on a chip.
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Optically pumped 1.3 μm room-temperature InAs quantum-dot micro-disk lasers directly grown on (001) silicon.
TL;DR: The first 1.3 μm room-temperature continuous-wave InAs quantum-dot micro-disk lasers epitaxially grown on industrial-compatible Si (001) substrates without offcut are reported, representing a major advancement toward the commercial success of fully integrated silicon photonics.
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Two-Dimensional Materials for Integrated Photonics: Recent Advances and Future Challenges
Jianghong Wu,Jianghong Wu,Hui Ma,Peng Yin,Yanqi Ge,Yupeng Zhang,Lan Li,Han Zhang,Hongtao Lin +8 more
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Silicon-germanium receivers for short-wave-infrared optoelectronics and communications
Daniel Benedikovic,Léopold Virot,Guy Aubin,Jean-Michel Hartmann,Farah Amar,Xavier Le Roux,Carlos Alonso-Ramos,Eric Cassan,Delphine Marris-Morini,Jean-Marc Fedeli,Frederic Boeuf,Bertrand Szelag,Laurent Vivien +12 more
TL;DR: A detailed overview on the latest development in nanophotonic receivers based on silicon and germanium is provided, including material processing, integration and diversity of device designs and arrangements, which emphasizes surging applications in optoelectronics and communications.
Journal ArticleDOI
High-speed and high-power germanium photodetector with a lateral silicon nitride waveguide
TL;DR: In this article, the authors proposed a double lateral Si3N4 waveguide for germanium-on-silicon photodetectors (Geon-Si PDs), which can serve as a novel waveguide-integrated coupling configuration.