High-speed light Modulation in avalanche breakdown mode for Si diodes
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...Switching rates of up to a few tens of GHz are presented, which is comparable with the device realized in SOI technology....
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...The rapid device speed is still much higher than that of avalanchebreakdown based Si diode light emitter [21], and is in good agreement with the Si gate-controlled diode light emitter’s maximum modulation frequency in theory, which is in the range of ∼54 to ∼89 GHz [30]–[32]....
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...Accordingly, the modulation speed is around a few tens of GHz [40]....
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...Despite the low optical emission power, a reverse-biased silicon p-n junction operating in avalanche breakdown can reach a modulation speed of 20 GHz [21]....
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...The Si-PMOSFET’s CMOS-compatible silicon based lightemission technology could potentially solve the bottleneck of electronic data transmission with the following characteristics: a) the use of silicon light sources allows monolithic integration with associated circuitry; b) the full compatibility with the standard CMOS and BiCMOS process technology implies low integrated circuit development and manufacturing costs; c) such a bulk-CMOS vertical Si light emitter generally allows switching frequencies in excess of 10 GHz due to the very fast transmission of impact ionized carriers in the p-n junction’s depletion region....
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41 citations
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...breakdown mode, and this speed is much higher than that of forward-biased silicon p-n junctions [18]....
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References
355 citations
"High-speed light Modulation in aval..." refers background in this paper
...OPTICAL interconnects for electronic circuits present an attractive alternative solution for the problem of interchip communication, for which current evolutionary approaches look inadequate [1]....
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326 citations
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"High-speed light Modulation in aval..." refers background in this paper
...Among the many theories, which have been partially able to explain the nature of the breakdown radiation, Bremsstrahlung, postulated by Figielski and Torun, has been regarded as the major cause of the visible range radiation in Si [2]–[7]....
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...Most of these devices operate in the forward-bias region where reliability, speed, and efficiency of the silicon light-emitting devices remain a problem [2]–[7]....
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"High-speed light Modulation in aval..." refers background in this paper
...hundreds of megahertz have been reported [9]....
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...Quantum efficiencies for such light emissions in the range of have been reported in the literature as compared to III-V materials having a quantum efficiency of the order of [9]....
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