High-Speed Silicon Photonics Modulators
19 Nov 2018-Vol. 106, Iss: 12, pp 2158-2182
TL;DR: The focus of this paper lies on the latter capable of supporting both complex-valued modulation and optically broadband operation, with a sense of the limitations of current technology and the potential of novel hybrid material integration.
Abstract: The realization of gigahertz bandwidth modulators out of silicon-based technology in the early 2000s marked a cornerstone of silicon photonics development. While modulation speeds have since progressed well above 50 GHz and satisfy the bandwidth requirements of current and emerging modulation formats, concurrently obtaining low drive voltages and low insertion losses remains a very active area of research. While modulators generally come in two categories, direct absorption and those relying on embedded phase shifters, the focus of this paper lies on the latter capable of supporting both complex-valued modulation and optically broadband operation. The paper provides an overview of the current state of the art, as well as of currently explored improvement paths. First, common phase shifter configurations, aspects related to electrical driving, and associated power consumption are reviewed. Slow-wave, resonant, and plasmonic enhancements are further discussed. The reader is familiarized with the optimization of these devices and provided with a sense of the limitations of current technology and the potential of novel hybrid material integration.
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TL;DR: Current AV sensor challenges are highlighted, and the strengths and weaknesses of the perception sensor currently deployed are analyzed, and current factors hindering the affirmation of silicon photonics OPAs and their future research directions are discussed.
Abstract: This paper aims to review the state of the art of Light Detection and Ranging (LiDAR) sensors for automotive applications, and particularly for automated vehicles, focusing on recent advances in the field of integrated LiDAR, and one of its key components: the Optical Phased Array (OPA). LiDAR is still a sensor that divides the automotive community, with several automotive companies investing in it, and some companies stating that LiDAR is a ‘useless appendix’. However, currently there is not a single sensor technology able to robustly and completely support automated navigation. Therefore, LiDAR, with its capability to map in 3 dimensions (3D) the vehicle surroundings, is a strong candidate to support Automated Vehicles (AVs). This manuscript highlights current AV sensor challenges, and it analyses the strengths and weaknesses of the perception sensor currently deployed. Then, the manuscript discusses the main LiDAR technologies emerging in automotive, and focuses on integrated LiDAR, challenges associated with light beam steering on a chip, the use of Optical Phased Arrays, finally discussing current factors hindering the affirmation of silicon photonics OPAs and their future research directions.
101 citations
TL;DR: A flow for the integration of graphene in photonics circuits relies on chemical vapor deposition of single layer graphene (SLG) matrices comprising up to ∼12000 individual single crystals, grown to match the geometrical configuration of the devices in the photonic circuit.
Abstract: Graphene and related materials can lead to disruptive advances in next-generation photonics and optoelectronics. The challenge is to devise growth, transfer and fabrication protocols providing high...
64 citations
10 Feb 2020
TL;DR: The detailed analysis of a silicon photonic integrated circuit shows that a codesigned implementation based on the decomposition of large matrix-vector multiplication into smaller instances and the use of nonnegative weights could significantly simplify the photonic implementation of the matrix multiplier and allow increased scalability.
Abstract: Deep learning is revolutionizing many aspects of our society, addressing a wide variety of decision-making tasks, from image classification to autonomous vehicle control. Matrix multiplication is an essential and computationally intensive step of deep-learning calculations. The computational complexity of deep neural networks requires dedicated hardware accelerators for additional processing throughput and improved energy efficiency in order to enable scaling to larger networks in the upcoming applications. Silicon photonics is a promising platform for hardware acceleration due to recent advances in CMOS-compatible manufacturing capabilities, which enable efficient exploitation of the inherent parallelism of optics. This article provides a detailed description of recent implementations in the relatively new and promising platform of silicon photonics for deep learning. Opportunities for multiwavelength microring silicon photonic architectures codesigned with field-programmable gate array (FPGA) for pre- and postprocessing are presented. The detailed analysis of a silicon photonic integrated circuit shows that a codesigned implementation based on the decomposition of large matrix-vector multiplication into smaller instances and the use of nonnegative weights could significantly simplify the photonic implementation of the matrix multiplier and allow increased scalability. We conclude this article by presenting an overview and a detailed analysis of design parameters. Insights for ways forward are explored.
61 citations
Cites background or methods from "High-Speed Silicon Photonics Modula..."
...For fast phase tuning, as aforementioned, electrooptic phase shifting leveraging the plasma dispersion effect is the most popular all-silicon technology [96]....
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...The input vectors are imprinted via high-speed intensity modulators [96]....
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TL;DR: In this article, the authors provide a system perspective and review recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits per-transmission link.
Abstract: Abstract The tremendous growth of data traffic has spurred a rapid evolution of optical communications for a higher data transmission capacity. Next-generation fiber-optic communication systems will require dramatically increased complexity that cannot be obtained using discrete components. In this context, silicon photonics is quickly maturing. Capable of manipulating electrons and photons on the same platform, this disruptive technology promises to cram more complexity on a single chip, leading to orders-of-magnitude reduction of integrated photonic systems in size, energy, and cost. This paper provides a system perspective and reviews recent progress in silicon photonics probing all dimensions of light to scale the capacity of fiber-optic networks toward terabits-per-second per optical interface and petabits-per-second per transmission link. Firstly, we overview fundamentals and the evolving trends of silicon photonic fabrication process. Then, we focus on recent progress in silicon coherent optical transceivers. Further scaling the system capacity requires multiplexing techniques in all the dimensions of light: wavelength, polarization, and space, for which we have seen impressive demonstrations of on-chip functionalities such as polarization diversity circuits and wavelength- and space-division multiplexers. Despite these advances, large-scale silicon photonic integrated circuits incorporating a variety of active and passive functionalities still face considerable challenges, many of which will eventually be addressed as the technology continues evolving with the entire ecosystem at a fast pace.
60 citations
Cites background from "High-Speed Silicon Photonics Modula..."
...Challenges, design, and optimization of silicon modulators for general applications and, in particular, for pulse amplitude modulation form a broad and rich topic and have been detailed in recent review papers [107, 108]....
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01 Apr 2021
45 citations
References
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TL;DR: Graphene-based optical modulation mechanism, with combined advantages of compact footprint, low operation voltage and ultrafast modulation speed across a broad range of wavelengths, can enable novel architectures for on-chip optical communications.
Abstract: Graphene, the single-atom-thick form of carbon, holds promise for many applications, notably in electronics where it can complement or be integrated with silicon-based devices. Intense efforts have been devoted to develop a key enabling device, a broadband, fast optical modulator with a small device footprint. Now Liu et al. demonstrate an exciting new possibility for graphene in the area of on-chip optical communication: a graphene-based optical modulator integrated with a silicon chip. This new device relies on the electrical tuning of the Fermi level of the graphene sheet, and achieves modulation of guided light at frequencies over 1 gigahertz, together with a broad operating spectrum. At just 25 square micrometres in area, it is one of the smallest of its type. Integrated optical modulators with high modulation speed, small footprint and large optical bandwidth are poised to be the enabling devices for on-chip optical interconnects1,2. Semiconductor modulators have therefore been heavily researched over the past few years. However, the device footprint of silicon-based modulators is of the order of millimetres, owing to its weak electro-optical properties3. Germanium and compound semiconductors, on the other hand, face the major challenge of integration with existing silicon electronics and photonics platforms4,5,6. Integrating silicon modulators with high-quality-factor optical resonators increases the modulation strength, but these devices suffer from intrinsic narrow bandwidth and require sophisticated optical design; they also have stringent fabrication requirements and limited temperature tolerances7. Finding a complementary metal-oxide-semiconductor (CMOS)-compatible material with adequate modulation speed and strength has therefore become a task of not only scientific interest, but also industrial importance. Here we experimentally demonstrate a broadband, high-speed, waveguide-integrated electroabsorption modulator based on monolayer graphene. By electrically tuning the Fermi level of the graphene sheet, we demonstrate modulation of the guided light at frequencies over 1 GHz, together with a broad operation spectrum that ranges from 1.35 to 1.6 µm under ambient conditions. The high modulation efficiency of graphene results in an active device area of merely 25 µm2, which is among the smallest to date. This graphene-based optical modulation mechanism, with combined advantages of compact footprint, low operation voltage and ultrafast modulation speed across a broad range of wavelengths, can enable novel architectures for on-chip optical communications.
3,105 citations
"High-Speed Silicon Photonics Modula..." refers background in this paper
...After an initial focus on graphene-based direct absorption modulators [52], [53], graphene-based phase shifters have also been demonstrated [54]....
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TL;DR: In this article, a numerical Kramers-Kronig analysis is used to predict the refractive index perturbations produced in crystalline silicon by applied electric fields or by charge carriers.
Abstract: A numerical Kramers-Kronig analysis is used to predict the refractive-index perturbations produced in crystalline silicon by applied electric fields or by charge carriers. Results are obtained over the 1.0-2.0 \mu m optical wavelength range. The analysis makes use of experimental electroabsorption spectra and impurity-doping spectra taken from the literature. For electrorefraction at the indirect gap, we find \Delta n = 1.3 \times 10^{5} at \lambda = 1.07 \mu m when E = 10^{5} V/cm, while the Kerr effect gives \Delta n = 10^{-6} at that field strength. The charge-carrier effects are larger, and a depletion or injection of 1018carriers/cm3produces an index change of \pm1.5 \times 10^{-3} at \lambda = 1.3 \mu m.
2,502 citations
"High-Speed Silicon Photonics Modula..." refers background in this paper
...carrier mobilities with increasing concentrations [7]), the waveguide losses rise faster than the phase shifter efficiency unless other changes are applied to the phase shifter configuration [21]....
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...In both, modification of the free-carrier concentrations inside the waveguide results in a modification of the material’s refractive index via the free-carrier plasma effect [7]....
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...Nonetheless, modulators remain a key area of investigation in SiP, since they still have a few weak points, improvement of which would go a long way in further increasing the attractiveness of the technology: Relatively high interface coupling losses associated to hybrid light source integration [5], [6] are compounded by the free-carrier absorption losses [7] occurring in carrier depletion/accumulation modulators, straining optical power budgets as short reach communications standards move to signaling rates of 50 Gbaud, four-level pulse amplitude modulation (PAM-4) and beyond [8]....
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...Based on the free-carrier refraction and absorption data reported at a 1550-nm wavelength in [7], this minimum loss can be calculated to range from 0....
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...From the Drude model, free-carrier-induced refraction and absorption can be modeled as [7]...
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TL;DR: Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures, and here a high-speed electro-optical modulator in compact silicon structures is experimentally demonstrated.
Abstract: Metal interconnections are expected to become the limiting factor for the performance of electronic systems as transistors continue to shrink in size. Replacing them by optical interconnections, at different levels ranging from rack-to-rack down to chip-to-chip and intra-chip interconnections, could provide the low power dissipation, low latencies and high bandwidths that are needed. The implementation of optical interconnections relies on the development of micro-optical devices that are integrated with the microelectronics on chips. Recent demonstrations of silicon low-loss waveguides, light emitters, amplifiers and lasers approach this goal, but a small silicon electro-optic modulator with a size small enough for chip-scale integration has not yet been demonstrated. Here we experimentally demonstrate a high-speed electro-optical modulator in compact silicon structures. The modulator is based on a resonant light-confining structure that enhances the sensitivity of light to small changes in refractive index of the silicon and also enables high-speed operation. The modulator is 12 micrometres in diameter, three orders of magnitude smaller than previously demonstrated. Electro-optic modulators are one of the most critical components in optoelectronic integration, and decreasing their size may enable novel chip architectures.
2,336 citations
TL;DR: It is shown that by use of a novel waveguide geometry the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 microm(-2), approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides.
Abstract: We present a novel waveguide geometry for enhancing and confining light in a nanometer-wide low-index material. Light enhancement and confinement is caused by large discontinuity of the electric field at highindex-contrast interfaces. We show that by use of such a structure the field can be confined in a 50-nm-wide low-index region with a normalized intensity of 20 mm 22 . This intensity is approximately 20 times higher than what can be achieved in SiO2 with conventional rectangular waveguides. © 2004 Optical Society of America OCIS codes: 030.4070, 130.0130, 130.2790, 230.7370, 230.7380, 230.7390, 230.7400. Recent results in integrated optics have shown the ability to guide, bend, split, and f ilter light on chips by use of optical devices based on high-index-contrast waveguides. 1–5 In all these devices the guiding mechanism is based on total internal ref lection (TIR) in a highindex material (core) surrounded by a low-indexmaterial (cladding); the TIR mechanism can strongly confine light in the high-index material. In recent years a number of structures have been proposed to guide or enhance light in low-index materials, 6–1 1 relying on external ref lections provided by interference effects. Unlike TIR, the external ref lection cannot be perfectly unity; therefore the modes in these structures are inherently leaky modes. In addition, since interference is involved, these structures are strongly wavelength dependent. Here we show that the optical field can be enhanced and conf ined in the low-index material even when light is guided by TIR. For a high-index-contrast interface, Maxwell’s equations state that, to satisfy the continuity of the normal component of electric f lux density D, the corresponding electric field (E-field) must undergo a large discontinuity with much higher amplitude in the low-index side. We show that this discontinuity can be used to strongly enhance and confine light in a nanometer-wide region of low-index material. The proposed structure presents an eigenmode, and it is compatible with highly integrated photonics technology. The principle of operation of the novel structure can be illustrated by analysis of the slab-based structure shown in Fig. 1(a), where a low-index slot is embedded between two high-index slabs (shaded regions). The novel structure is hereafter referred to as a slot waveguide. The slot waveguide eigenmode can be seen as being formed by the interaction between the fundamental eigenmodes of the individual slab waveguides. Rigorously, the analytical solution for the transverse E-field profile Ex of the fundamental TM eigenmode of the slab-based slot waveguide is
1,716 citations
TL;DR: An approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation is described and an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz is demonstrated.
Abstract: Silicon has long been the optimal material for electronics, but it is only relatively recently that it has been considered as a material option for photonics1. One of the key limitations for using silicon as a photonic material has been the relatively low speed of silicon optical modulators compared to those fabricated from III–V semiconductor compounds2,3,4,5,6 and/or electro-optic materials such as lithium niobate7,8,9. To date, the fastest silicon-waveguide-based optical modulator that has been demonstrated experimentally has a modulation frequency of only ∼20 MHz (refs 10, 11), although it has been predicted theoretically that a ∼1-GHz modulation frequency might be achievable in some device structures12,13. Here we describe an approach based on a metal–oxide–semiconductor (MOS) capacitor structure embedded in a silicon waveguide that can produce high-speed optical phase modulation: we demonstrate an all-silicon optical modulator with a modulation bandwidth exceeding 1 GHz. As this technology is compatible with conventional complementary MOS (CMOS) processing, monolithic integration of the silicon modulator with advanced electronics on a single silicon substrate becomes possible.
1,612 citations
"High-Speed Silicon Photonics Modula..." refers background in this paper
...Since the first demonstration of a silicon photonics (SiP) modulator with gigahertz (GHz) modulation frequencies in 2004 [1], substantial efforts have been made to improve modulation efficiency, bandwidth, and insertion losses....
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