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Proceedings ArticleDOI

High temperature high voltage packaging of wideband gap semiconductors using gas insulating medium

TL;DR: In this paper, the authors present the results obtained concerning the insulating parts of this packaging, mainly secondary passivation and encapsulation in a 200 -450 °C temperature range.
Abstract: Using wideband gap semiconductors (SiC, GaN) appear as possible solution to the growing demand for the development of high temperature power electronics. These devices are devoted to work in harsh environments mainly for "on board applications" like automobile, aircraft and space exploration. In some cases, high temperature is associated to the environment itself (when the converter is located in the vicinity of a thermal engine for example) but in other, it is only related to the increase of the power density associated to power integration. However, the opportunities given by these wideband gap semiconductors devices may be reduced since their packages are inadequate as regards insulation, interconnection and thermal management under high-temperature operations and environments. The aim of this paper is to present the results obtained concerning the insulating parts of this packaging, mainly secondary passivation and encapsulation in a 200 -450 °C temperature range. Gas insulation is used and this original solution is examined for different gases and conditions.
Citations
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Journal ArticleDOI
TL;DR: The challenges of DC microgrid protection are investigated from various aspects including, dc fault current characteristics, ground systems, fault detection methods, protective devices, and fault location methods.
Abstract: DC microgrids have attracted significant attention over the last decade in both academia and industry. DC microgrids have demonstrated superiority over AC microgrids with respect to reliability, efficiency, control simplicity, integration of renewable energy sources, and connection of dc loads. Despite these numerous advantages, designing and implementing an appropriate protection system for dc microgrids remains a significant challenge. The challenge stems from the rapid rise of dc fault current which must be extinguished in the absence of naturally occurring zero crossings, potentially leading to sustained arcs. In this paper, the challenges of DC microgrid protection are investigated from various aspects including, dc fault current characteristics, ground systems, fault detection methods, protective devices, and fault location methods. In each part, a comprehensive review has been carried out. Finally, future trends in the protection of DC microgrids are briefly discussed.

188 citations


Cites background from "High temperature high voltage packa..."

  • ...It is reported that SiC and GaN semiconductors could work in 600⸰C [73],[74] and 450⸰C [75], respectively....

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  • ...These challenges include designing advanced gate-drive with active dv∕dt and di∕dt control, designing efficient Electromagnetic Interference (EMI) filter, and design better device packaging due to high temperature and fast switching,[75],[77],[83],[94],[95]....

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Journal ArticleDOI
Niloufar Keshmiri1, Deqiang Wang1, Bharat Agrawal1, Ruoyu Hou1, Ali Emadi1 
TL;DR: The detailed benefits of using GaN devices in transportation electrification applications are investigated, the material properties of GaN including the applications ofGaN HEMTs at different switch ratings are presented, and the challenges currently facing the transportation industry are introduced.
Abstract: Gallium Nitride High Electron Mobility Transistors (GaN HEMTs) enable higher efficiency, higher power density, and smaller passive components resulting in lighter, smaller and more efficient electrical systems as opposed to conventional Silicon (Si) based devices. This paper investigates the detailed benefits of using GaN devices in transportation electrification applications. The material properties of GaN including the applications of GaN HEMTs at different switch ratings are presented. The challenges currently facing the transportation industry are introduced and possible solutions are presented. A detailed review of the use of GaN in the Electric Vehicle (EV) powertrain is discussed. The implementation of GaN devices in aircraft, ships, rail vehicles and heavy-duty vehicles is briefly covered. Future trends of GaN devices in terms of cost, voltage level, gate driver design, thermal management and packaging are investigated.

82 citations


Cites background from "High temperature high voltage packa..."

  • ...The semiconductor technology permits the design of more power dense and reliable power electronic systems, while optimizing efficiency [83], [84], [95]....

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  • ...WBG devices can operate in harsh environments such as on board applications; namely aircraft, spacecraft and other vehicles [83], [84]....

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Journal ArticleDOI
TL;DR: In this article, the authors focus on reverse conduction and transistors behavior during dead times in an inverter leg structure and present an approach by calorimetric method, dedicated to transistors losses evaluation during operation.
Abstract: GaN field effect power transistors based on Si substrate show low on-state resistance and very small Cgs capacitance. Therefore these devices are good candidates for high-frequency switching operation. In this paper, we first focus on reverse conduction and transistors behavior during dead times in an inverter leg structure. Then we present an approach by calorimetric method, dedicated to transistors losses evaluation during operation. Using this method, we evaluate in a single measurement the transistors temperature and losses versus a chosen dead time or versus frequency. At least, we conclude on good practices regarding the drive of these components.

44 citations


Cites background from "High temperature high voltage packa..."

  • ...The GaN semiconductors present high thermal conductivity and heat capacity; thus, devices based on GaN could operate up to 450 ◦C when grown on GaN or diamond wafers [3]....

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Proceedings ArticleDOI
01 Dec 2012
TL;DR: In this article, the authors presented the results obtained concerning the packaging of a full-wave rectifying bridge using SiC Schottky Barrier Diodes, capable of operating above 300°C.
Abstract: Using wideband gap semiconductors (SiC, GaN) appears as possible solution to the growing demand for the development of high temperature, high frequencies power electronics This will help downsizing the current Power Electronics systems and extend their range of operation conditions The aim of this paper is to present the results obtained concerning the packaging of a full-wave rectifying bridge using SiC Schottky Barrier Diodes, capable to operate above 300°C The diodes are rated 1200 V and 50 A The proposed packaging is based on an insulating-gas encapsulation and stacking of the components The rectifying function was tested by feeding a current trough the bridge at room temperature, and while applying high voltage in an insulating gas-filled heated chamber Results show that the type of interconnection proposed can withstand at least 10 A and 200 V in rectifying conditions Gas encapsulation allowed for an operation of the diodes under high voltage conditions up to 350°C even if at this temperature diode leakage current is too high to perform an appropriate rectification

8 citations


Cites methods from "High temperature high voltage packa..."

  • ...Gas insulation has been used for “standard applications” such as switchgear (GIS), but only recently they have been revisited and characterized in the high-temperature range [3]....

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Proceedings ArticleDOI
01 Oct 2013
TL;DR: In this article, surface potential measurements revealed a fast decay for AlN and Al2O3 with the increase of the temperature while on Si3N4 charges remain on surface at 400°C.
Abstract: Aluminium oxide (Al2O3), Aluminium Nitride (AlN) and Silicon Nitride (Si3N4) are ceramics commonly used in power electronics modules, and are the current candidates for high temperature applications. A first study has previously shown different charge displacement behaviors at high temperature (up to 400°C). Surface potential measurements revealed a fast decay for AlN and Al2O3 with the increase of the temperature while on Si3N4 charges remain on surface at 400°C. However, these charges may move through the surface or be injected in the volume of the ceramics. - Surface potential results are correlated with broadband impedance spectroscopy and to current-voltage measurements of the ceramics. AlN and Al2O3 have a resistive-like behavior at high temperature, characterized by a space charge limited conduction current mechanism at high fields. For Si3N4, despite its resistivity decreases with temperature, it shows a dielectric behavior and an ohmic conduction mechanism over the studied temperature and field ranges.

7 citations


Cites methods from "High temperature high voltage packa..."

  • ...For encapsulation two ways are being explored: solid insulation including high temperature polymers and gas insulation with fluorocarbons [3]....

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References
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Journal ArticleDOI
07 Nov 2002
TL;DR: It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range.
Abstract: The fact that wide bandgap semiconductors are capable of electronic functionality at much higher temperatures than silicon has partially fueled their development, particularly in the case of SiC. It appears unlikely that wide bandgap semiconductor devices will find much use in low-power transistor applications until the ambient temperature exceeds approximately 300/spl deg/C, as commercially available silicon and silicon-on-insulator technologies are already satisfying requirements for digital and analog VLSI in this temperature range. However practical operation of silicon power devices at ambient temperatures above 200/spl deg/C appears problematic, as self-heating at higher power levels results in high internal junction temperatures and leakages. Thus, most electronic subsystems that simultaneously require high-temperature and high-power operation will necessarily be realized using wide bandgap devices, once they become widely available. Technological challenges impeding the realization of beneficial wide bandgap high ambient temperature electronics, including material growth, contacts, and packaging, are briefly discussed.

863 citations

Journal ArticleDOI
TL;DR: In this article, Gold and platinum wire bonding was evaluated for top-side electrical contact in silicon carbide semiconductors with high die shear strength at temperatures in excess of 300degC, and the results showed that Au wire was reliable after 2000 h at 300 degC with Ti/Ti:W/Au pads over passivation on SiC.
Abstract: Silicon carbide is a wide-bandgap semiconductor capable of operation at temperatures in excess of 300degC. However, high-temperature packaging to interface with the other elements of the electrical system is required. Die attach, wire bonding, and passivation materials and techniques have been demonstrated for use at 300degC. Transient liquid phase bonding has been developed with Au:Sn/Au, yielding high die shear strength after 2000 h at 400degC. Large diameter (250 mum) gold and platinum wire bonding was evaluated for top side electrical contact. Au wire was reliable after 2000 h at 300degC with Ti/Ti:W/Au pads over passivation on the SiC. However, Au wire on Ti/Pt/Au and Pt wire on both Ti/Tl:W/Au and Ti/Pt/Au exhibited passivation fracture with aging. Polyimide has been demonstrated for 2000 h at 300degC in air as a high-voltage passivation layer.

113 citations

Journal ArticleDOI
TL;DR: In this article, the authors compared the discharge properties of N2 and CO2-based gas mixtures including a perfluorocarbon (PFC) gas such as CF4, C3F8 and c-C4F8 under non-uniform field.
Abstract: This paper describes discharge properties of N2 and CO2-based gas mixtures including a perfluorocarbon (PFC) gas such as CF4, C3F8 and c-C4F8 under non-uniform field The mixture ratio between a base gas of N2 or CO2 and the additive PFC gas was fixed as 9:1; namely, 90%N2/10%PFC or 90%CO2/10%PFC gas mixture The PFC gases have even smaller global warming potential (GWP) than SF6 gas and have good insulation properties as SF6 gas Thus, PFC gas mixture is expected to be a SF6 substitute without highly pressurizing the gas over the conventional pressure of 05 to 06 MPa In this study, in order to compare the partial discharge (PD) inception voltage VPD and breakdown voltage VB properties between N2 and CO2-based gas mixtures, as well as between the additive gas of PFC and SF6 gas, we investigated these properties of the gas mixtures with a needle to plane electrode under ac high voltage application The gas pressure was changed from 01 to 06 MPa As a result, it was found that VPD and VB characteristics of N2 and CO2-based gas mixtures differed considerably, especially the gas pressure dependence of VB (so-called the N shape characteristics) VB characteristics of N2-based gas mixture including c-C4F8 proved to be excellent within the test conditions over the wide gas pressure region, showing the maximum breakdown voltage In terms of VPD properties, CO2-based gas mixture had an advantage over N2-based gas mixture due to higher VPD Furthermore, we discussed the synergy effects of VPD and VB for N2 and CO2-based gas mixtures using the index Rn which was defined to quantify the degree of the effect Rn for CO2-based gas mixture was higher than that of N2-based gas mixture

62 citations

Journal ArticleDOI
TL;DR: In this article, a 3D high temperature integrated power electronics module for applications involving high density, and high temperature (e.g., those over 200degC) is described.
Abstract: Technology for a 3-D high temperature integrated power electronics module for applications involving high density, and high temperature (e.g., those over 200degC) is described. The high temperature embedded chip module (ECM) technology is proposed to realize a lower stress distribution in a mechanically balanced structure with double-sided metallization layers and material coefficient of thermal expansion match in the structure. This technology for packaging the active component is also proposed for universal use with a flip-over structure and pressure connections. The fabrication process of this high temperature ECM is presented. The forward and reverse characteristics of the high temperature ECM have been measured up to 279degC. Thermally induced mechanical stress is reduced to an acceptable level by applying a symmetrical structure with buffering layers

51 citations

Journal ArticleDOI
TL;DR: In this article, elementary defect patterns are used to distinguish the main cause (dies or insulating materials) of observed partial discharges in IGBT modules, and a new test is proposed to detect the cause of discharges.
Abstract: Partial discharges measurements have been performed on 3.3 kV IGBT power modules. Results using both the normalized and a new proposed test are compared. The new test, allowing the detection of partial discharges in all the insulating materials, is detailed. Elementary defect patterns are used to distinguish the main cause (dies or insulating materials) of the observed partial discharges in IGBT modules

42 citations