Journal ArticleDOI
High-Temperature Precipitation of Impurities within the Vlasov Model for Solids
V. I. Talanin,Igor E. Talanin +1 more
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TLDR
In this paper, a qualitative model of the formation of electric centers is proposed, which directly relates their origin to the initial defect structure of silicon, and it is shown that the concepts and principles of the Vlasov physics are absolutely applicable in solid-state physics.Abstract:
It is shown that the Vlasov model for a solid describes the complexing processes when growing real crystals with allowance for the thermal growth conditions. It makes it possible (along with the classical theory of nucleation and growth of second-phase particles in solids) to calculate the defect crystal structure that was formed during the growth. It is established that the high-temperature impurity precipitation is directly related to the subsequent transformation of the defect structure when manufacturing of silicon devices. A qualitative model of the formation of electric centers is proposed, which directly relates their origin to the initial defect structure of silicon. It is shown that the concepts and principles of the Vlasov physics are absolutely applicable in solid-state physics.read more
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Complexation in germanium in accordance with Vlasov's model for solids
V.I. Talanin,I. E. Talanin +1 more
TL;DR: Using Vlasov's model for solids, the diffusion model of defect formation in germanium was verified in this paper, where the possibility of applying Vlasod's model to describe complexation in dislocation-free gernium single crystals was shown.
References
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Book
Dynamical Theory of Crystal Lattices
Max Born,Kʿun Huang +1 more
TL;DR: Born and Huang's classic work on the dynamics of crystal lattices was published over thirty years ago, and it remains the definitive treatment of the subject as mentioned in this paper. But it is not the most complete work on crystal lattice dynamics.
Book
The theory of transformations in metals and alloys
J.W. Christian,H. M. Otte +1 more
TL;DR: In this paper, the authors present a general introduction to the theory of transformation kinetics of real metals, including the formation and evolution of martensitic transformations, as well as a theory of dislocations.
Journal ArticleDOI
The mechanism of swirl defects formation in silicon
TL;DR: In this article, the first stage of defect formation is recombination and diffusion of vacancies and self-interstitials in the vicinity of the crystallization front, followed by several successive stages: diffusion of interstitials to the crystal surface, nucleation of primary interstitial clusters, cluster growth, conversion of clusters into other forms (particularly dislocation loops).
Journal ArticleDOI
Mechanism of the Formation of Donor States in Heat-Treated Silicon
TL;DR: In this article, a mechanism for the donor formation during heat treatment of silicon crystals is presented which accounts quantitatively for the complex kinetic phenomena and which is consistent with the known extra-kinetic information concerning this system.