High temperature Pt Schottky diode gas sensors on n-type GaN
TL;DR: In this article, the characteristics of Pt Schottky diodes on n-type GaN in hydrogen and propane are reported for the first time, and they are able to detect hydrogen from 200-400°C.
Abstract: The characteristics of Pt Schottky diodes on n-type GaN in hydrogen and propane are reported for the first time. This response from 200–400°C has been characterized by current–voltage measurements, revealing that the diodes are able to detect hydrogen from 200–400°C and propane from 300–400°C. The high temperature stability of Pt diodes on GaN has been investigated by long term annealing at 400°C in Ar or 20% O2 in Ar. The diodes have been held at 400°C for 500 h without degradation of their electrical characteristics or response to hydrogen-containing gases.
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Sandia National Laboratories1, University of California, Davis2, Massachusetts Institute of Technology3, Cornell University4, United States Army Research Laboratory5, Ohio State University6, University of California, Santa Barbara7, Boston University8, North Carolina State University9, Purdue University10, Georgia Institute of Technology11, Michigan State University12, Air Force Research Laboratory13, National Institute of Information and Communications Technology14, University of South Carolina15, United States Naval Research Laboratory16, Arizona State University17, University of Illinois at Urbana–Champaign18, Vanderbilt University19
TL;DR: The UWBG semiconductor materials, such as high Al‐content AlGaN, diamond and Ga2O3, advanced in maturity to the point where realizing some of their tantalizing advantages is a relatively near‐term possibility.
Abstract: J. Y. Tsao,* S. Chowdhury, M. A. Hollis,* D. Jena, N. M. Johnson, K. A. Jones, R. J. Kaplar,* S. Rajan, C. G. Van de Walle, E. Bellotti, C. L. Chua, R. Collazo, M. E. Coltrin, J. A. Cooper, K. R. Evans, S. Graham, T. A. Grotjohn, E. R. Heller, M. Higashiwaki, M. S. Islam, P. W. Juodawlkis, M. A. Khan, A. D. Koehler, J. H. Leach, U. K. Mishra, R. J. Nemanich, R. C. N. Pilawa-Podgurski, J. B. Shealy, Z. Sitar, M. J. Tadjer, A. F. Witulski, M. Wraback, and J. A. Simmons
785 citations
Cites background from "High temperature Pt Schottky diode ..."
...[304],[305] A second aspect of this technology is electronics[306] -- wireless data communication and power sources[304, 307-313] that can be co-located with the sensors....
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...These sensors might be discrete or might be integrated with other sensors for multi-component orthogonal sensing in environments that change quickly and contain a number of chemical or biological species.[304],[305] A second aspect of this technology is electronics[306] -- wireless data communication and power sources[304, 307-313] that can be co-located with the sensors....
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TL;DR: In this article, the authors discuss the latest advancements in the 2D layered inorganic materials for gas sensors and introduce various types of gas-sensing devices and describe the basic parameters and influence factors of the gas sensors to further enhance their performance.
Abstract: Two-dimensional (2D) layered inorganic nanomaterials have attracted huge attention due to their unique electronic structures, as well as extraordinary physical and chemical properties for use in electronics, optoelectronics, spintronics, catalysts, energy generation and storage, and chemical sensors Graphene and related layered inorganic analogues have shown great potential for gas-sensing applications because of their large specific surface areas and strong surface activities This review aims to discuss the latest advancements in the 2D layered inorganic materials for gas sensors We first elaborate the gas-sensing mechanisms and introduce various types of gas-sensing devices Then, we describe the basic parameters and influence factors of the gas sensors to further enhance their performance Moreover, we systematically present the current gas-sensing applications based on graphene, graphene oxide (GO), reduced graphene oxide (rGO), functionalized GO or rGO, transition metal dichalcogenides, layered II
529 citations
TL;DR: There has been significant recent interest in the use of surface-functionalized thin film and nanowire wide bandgap semiconductors, principally GaN, InN, ZnO and SiC, for sensing of gases, heavy metals, UV photons and biological molecules as mentioned in this paper.
244 citations
TL;DR: In this article, a GaN-based Schottky diodes with catalytically active platinum electrodes was used to detect hydrogen in high-temperature gas sensor devices and the results indicated an interfacial effect as the origin of the sensor response to hydrogen.
Abstract: Besides silicon carbide, group-III nitrides are also suitable large-band-gap semiconductor materials for high-temperature gas sensor devices. Exposing GaN-based Schottky diodes with catalytically active platinum electrodes to hydrogen, we observed a decrease of the rectifying characteristics which we attribute to a decrease in Schottky barrier height. Current–voltage and elastic recoil detection measurements were used to investigate the H-sensing behavior of such devices. Our results indicate an interfacial effect as the origin of the sensor response to hydrogen.
200 citations
TL;DR: In this paper, the piezoresistive effect in piezoelectric AlGaN layers is investigated and the dependence of the gauge factor on the Al content is attributed to the influence of strain induced piezOElectric fields.
Abstract: In the present article recent results concerning sensor applications of AlGaN layers and AlGaN/GaN heterostructures are summarized. The piezoresistive effect in piezoelectric AlGaN layers is investigated and the dependence of the piezoresistive gauge factor on the Al content is attributed to the influence of strain induced piezoelectric fields. An enhancement of this effect is observed in AlGaN/GaN heterostructures resulting in high longitudinal gauge factors.
The response of gas sensitive Pt:GaN Schottky diodes to hydrogen and hydrogen containing gases is analyzed up to temperatures of 600 °C and employed to realize gas sensitive field effect transistors which are demonstrated to operate up to 400 °C. In addition, ion sensitive field effect transistors (ISFETs) have also been fabricated on the basis of AlGaN/GaN heterostructures. The GaN surface shows a high pH sensitivity which is attributed to the presence of a thin native metal oxide layer on the surface. (© 2003 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim)
141 citations
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TL;DR: Pd/Si MIS Schottky diode hydrogen detectors have been fabricated with a response of 2-3 orders of magnitude change in current for 154 ppm of H 2 in N 2 as mentioned in this paper.
Abstract: Pd/Si MIS Schottky diode hydrogen detectors have been fabricated with a response of 2-3 orders of magnitude change in current for 154 ppm of H 2 in N 2 . Detailed evaluation of dark I-V, C-V, illuminated I-V, and internal photoemission data unambiguously ascribes the strong hydrogen sensitivity of these diodes to hydrogen-induced change in the work function of Pd, rather than to any surface-state effects. The reaction rate of the device to different gas ambients has been studied with time response measurements. A long-term degradation mechanism has been identified and traced to the poisoning of Pd by environmental sulfur. The role of oxygen and atomic hydrogen in determining the Schottky barrier height also is discussed in some detail.
152 citations
TL;DR: In this paper, the effects of deliberate hydrogenation of GaN were investigated for heteroepitaxial layers grown by metalorganic chemical vapor deposition, and the GaN layers were either Mg−doped, p−type after thermal activation, or Si−dopted, n type.
Abstract: The effects of the deliberate hydrogenation of GaN were investigated for heteroepitaxial layers grown by metalorganic chemical vapor deposition. The GaN layers were either Mg‐doped, p‐type after thermal activation, or Si‐doped, n type. Elemental depth profiles from secondary ion mass spectroscopy reveal a striking contrast after a deuteration at 600 °C: the deuterium concentration in Mg‐doped GaN is ∼1019 cm−3 while there is no detectable deuterium incorporation in the n‐type material. Variable temperature Hall effect measurements provide the most direct evidence to date for Mg–H complex formation with the decrease in the hole concentration upon hydrogenation accompanied by an increase in the hole Hall mobility.
141 citations
TL;DR: In this article, the authors used catalytic metal gate capacitors operating at about 800 degrees Celsius (C) for high temperature gas sensor devices, where hydrogen or hydrogen containing molecules were used.
Abstract: Catalytic metal gate-silicon dioxide-silicon carbide (MOSiC) capacitors operating to about 800-degrees-C are used as high temperature gas sensor devices. Hydrogen or hydrogen containing molecules, ...
123 citations
TL;DR: The properties of gas-sensitive semiconductor devices with catalytic metal gates are reviewed, with emphasis on field-effect structures sensitive to hydrogen-containing molecules like H 2, NH 3, H 2 S, alcohols, ethylene etc as mentioned in this paper.
110 citations
TL;DR: The Schottky barrier diodes proposed in this article can be used as a very sensitive detector of hydrogen gas which operates even at room temperature, and when the temperature was increased, the sensitivity of the contacts to hydrogen increased and the response time decreased.
103 citations