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Highly Asymmetric Optical Properties of β-Ga2O3 as Probed by Linear and Nonlinear Optical Excitation Spectroscopy

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TLDR
The β-Ga2O3 is a highly promising semiconductor for a deep ultraviolet (UV) emitter owing to its wide band gap, which significantly varies in the range of 4.49-4.74 eV due to its optical trirefring as mentioned in this paper.
Abstract
β-Ga2O3 is a highly promising semiconductor for a deep ultraviolet (UV) emitter owing to its wide band gap, which significantly varies in the range of 4.49–4.74 eV because of its optical trirefring...

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[INVITED] Three-dimensional imaging of threading dislocations in GaN crystals using two-photon excitation photoluminescence

TL;DR: In this paper, the three-dimensional imaging of threading dislocations in GaN films using two-photon excitation photoluminescence was demonstrated using dark lines.
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Structure Tuning, Strong Second Harmonic Generation Response, and High Optical Stability of the Polar Semiconductors Na1-xKxAsQ2.

TL;DR: The mixed cation compounds Na1-xKxAsSe2 and Na0.9AsS2 (x = 0.8, 0.5K0.5AsSe 2) have the highest SHG response and exhibit significantly higher laser-induced damage thresholds (LIDTs) as mentioned in this paper, which is consistent with the experimentally obtained value of deff = 16.8 pm/V.
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Properties and perspectives of ultrawide bandgap Ga2O3 in optoelectronic applications

TL;DR: In this paper, the potential, challenges and progress of Ga2O3, particularly as an emerging material for high-power and deep-ultraviolet optoelectronic devices, are also reviewed and presented.
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Effect of extended defects on photoluminescence of gallium oxide and aluminum gallium oxide epitaxial films

TL;DR: In this article , a systematic photoluminescence (PL) study on three series of gallium oxide/aluminum oxide films and bulk single crystals is performed including comparing doping, epitaxial substrates, and aluminum concentration.
References
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Journal ArticleDOI

A review of Ga2O3 materials, processing, and devices

TL;DR: The role of defects and impurities on the transport and optical properties of bulk, epitaxial, and nanostructures material, the difficulty in p-type doping, and the development of processing techniques like etching, contact formation, dielectrics for gate formation, and passivation are discussed in this article.
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Dispersion of bound electron nonlinear refraction in solids

TL;DR: In this article, a two-hand model is used to calculate the scaling and spectrum of the nonlinear absorption of semiconductors and wide-gap optical solids, and the bound electronic nonlinear refractive index n/sub 2/ is obtained using a Kramers-Kronig transformation.
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Oxygen vacancies and donor impurities in β-Ga2O3

TL;DR: In this paper, the role of oxygen vacancies and various impurities in the electrical and optical properties of the transparent conducting oxide β-Ga2O3 was investigated using hybrid functionals.
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Determination of bound-electronic and free-carrier nonlinearities in ZnSe, GaAs, CdTe, and ZnTe

TL;DR: In this article, the authors extend the application of the Z-scan experimental technique to determine free-carrier nonlinearities in the presence of bound electronic refraction and two-photon absorption.
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Dispersion and band-gap scaling of the electronic Kerr effect in solids associated with two-photon absorption.

TL;DR: By using the two-photon-absorption spectrum as predicted by a two-parabolic-band model, this work can predict the observed universal dispersion, scaling, and values of ${\mathit{n}}_{2}$ that range over 4 orders of magnitude and change sign, using a simple Kramers-Kronig analysis.
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