Highly Linear Mixer for On-chip RF Test in 130 nm CMOS
01 Jan 2007-
TL;DR: The complexity of wireless communication integrated circuits is increasing day by day due to the trend of multifunction and multistandard support as mentioned in this paper. This has not only increased the production cost of...
Abstract: The complexity of wireless communication integrated circuits is increasing day by day due to the trend of multifunction and multistandard support. This has not only increased the production cost of ...
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01 Jan 2014
TL;DR: This paper illustrates up-conversion mixer with very high linearity and improved conversion gain, and CMOS Operational amplifier is used to enhance the overall conversion gain of the proposed mixer circuit.
Abstract: This paper illustrates up-conversion mixer with very high linearity and improved conversion gain. CMOS Operational amplifier is used to enhance the overall conversion gain of the proposed mixer circuit. The derivative Superposition technique is applied to improve the linearity of the proposed Up-conversion mixer circuit. The operating frequency of this circuit is 2.4 GHz and it is applicable for the Zigbee transmitter front-end. In this proposed Up-conversion mixer, passive balun circuit is used to convert unbalanced base-band signal to differential balanced signal. The proposed up- conversion mixer converts input base band signal of 100 MHz to radio frequency output signal of 2.4GHz. The local oscillator frequency is 2.3 GHz and a local oscillator power is considered at 2 dBm. The conversion gain of this mixer is 18.86 dB, IIP3 and OIP3 are 15.9708 dBm and 16.4053 dBm respectively. The circuit is simulated on cadence analog and digital design tool at 45nm CMOS technology and rail to rail power supply is ±1.2 V.
25 Mar 2008
TL;DR: In this paper, an accurate noise analysis for active mixers in 90 nm technology, based on the variations of the two parameters W/L (transistor size) and fLO (local oscillator frequency) is presented.
Abstract: In this paper an accurate noise analysis for active mixers in 90 nm technology, based on the variations of the two parameters W/L (transistor size) and fLO (local oscillator frequency) is presented. The contribution of the gate resistance noise to the gate and drain total current noises is considered, whereas this noise is usually assumed to be an independent source in the literature. It is shown that the variations of the noise generated by the switching pair in a mixer due to W/L variations in a wide range of local oscillator frequency, is less than the variations of the noise generated by the transconductor section of the mixer, which this matter shows the importance of the transconductor. Also it is shown that for the gate-source voltage values near to the threshold voltage value, the variations of the noise generated by the switching pair and the transconductor due to W/L variations, is reduced. In this middle, the reduction of the noise generated by the switching pair is more.
References
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Journal Article•
TL;DR: This expanded and thoroughly revised edition of Thomas H. Lee's acclaimed guide to the design of gigahertz RF integrated circuits features a completely new chapter on the principles of wireless systems.
Abstract: 53 ■ IEEE CIRCUITS & DEVICES MAGAZINE ■ NOVEMBER/DECEMBER 2005 THE DESIGN OF CMOS RADIOFREQUENCY INTEGRATED CIRCUITS, 2ND ED By Thomas Lee, Cambridge University Press, 2003. All-CMOS radio transceivers and system-on-a-chip are rapidly making inroads into a wireless market that, for years, was dominated by bipolar solutions. On wireless LAN and Bluethooth, RF CMOS is especially dominant, and it is becoming also in GSM cellular and GPS receivers. Hence, books that cover this widespread domain respond to a real need. The first edition of this book, published on 1998, was a pioneering textbook on the field of RF CMOS design. This second edition is a very interesting and upgraded version that includes new material and revised topics. In particular, it now includes a chapter on the fundamentals of wireless systems. The chapter on IC components is greatly expanded and now follows that on passive RLC components. The chapter on MOS devices has been updated since it includes the understanding of the model for the shorth-channel MOS and considers and discusses the scaling trends and its impact on the next several years. It has also expanded the topic of power amplifiers; indeed, it now also covers techniques for linearization and efficiency enhancement. Low-noise amplifiers, oscillators, and phase noise are now expanded and treated with more detail. Moreover, the chapter on transceiver architectures now includes much more detail, especially on direct-conversion architecture. Finally, additional commentary on practical details on simulations, floorplanning, and packaging has been added. The first edition of this book widely covered all the main arguments needed in the CMOS design context and provided a bridge between system and circuit issues. This second edition, which is upgraded and improved, is really useful, both in the industry and academia, for the new generation of RF engineers. Indeed, it is suited for students taking courses on RF design and is a valuable reference for practicing engineers. Of course, the arguments treated in the textbook lead up to low-frequency analog design IC topics. Hence, readers have to be intimately familiar with that subject. The book is divided into 20 chapters: 1) A Nonlinear History of Radio 2) Overview of Wireless Principles 3) Passive RLC Networks 4) Characteristics of Passive IC Components 5) A Review of MOS Device Physics; 6) Distributed Systems 7) The Smith Chart and S-Parameters 8) Bandwidth Estimation Techniques 9) High-Frequency Amplifier Design 10) Voltage References and Biasing 11) Noise 12) LNA Design 13) Mixers 14) Feedback Amplifiers 15) RF Power Amplifiers 16) Phase Locked Loop 17) Oscillators and Synthesizers 18) Phase Noise 19) Architectures 20) RF Circuits Through the Ages. Moreover, it contains over 100 circuit diagrams and many homework problems. Gaetano Palumbo
3,949 citations
Book•
05 Jun 2012TL;DR: In this article, the authors present an expanded and thoroughly revised edition of Tom Lee's acclaimed guide to the design of gigahertz RF integrated circuits, which is packed with physical insights and design tips, and includes a historical overview of the field in context.
Abstract: This book, first published in 2004, is an expanded and thoroughly revised edition of Tom Lee's acclaimed guide to the design of gigahertz RF integrated circuits. A new chapter on the principles of wireless systems provides a bridge between system and circuit issues. The chapters on low-noise amplifiers, oscillators and phase noise have been significantly expanded. The chapter on architectures now contains several examples of complete chip designs, including a GPS receiver and a wireless LAN transceiver, that bring together the theoretical and practical elements involved in producing a prototype chip. Every section has been revised and updated with findings in the field and the book is packed with physical insights and design tips, and includes a historical overview that sets the whole field in context. With hundreds of circuit diagrams and homework problems this is an ideal textbook for students taking courses on RF design and a valuable reference for practising engineers.
2,909 citations
Book•
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2,489 citations
"Highly Linear Mixer for On-chip RF ..." refers background in this paper
...34 Thus, it is apparent that a stronger interferer with a frequency, which is close to the actual signal frequency, will corrupt the signal due to 3 order intermodulation products because the fundamental increases in proportion to A, whereas IM3 increases in proportion to A [20]....
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...Odd order harmonics make the system nonlinear [20]....
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TL;DR: In this paper, a qualitative physical model was developed to explain the mechanisms responsible for flicker noise in mixers, and simple equations were derived to estimate the flicker and white noise at the output of a switching active mixer.
Abstract: Flicker noise in the mixer of a zero- or low-intermediate frequency (IF) wireless receiver can compromise overall receiver sensitivity. A qualitative physical model has been developed to explain the mechanisms responsible for flicker noise in mixers. The model simply explains how frequency translations take place within a mixer. Although developed to explain flicker noise, the model predicts white noise as well. Simple equations are derived to estimate the flicker and white noise at the output of a switching active mixer. Measurements and simulations validate the accuracy of the predictions, and the dependence of mixer noise on local oscillator (LO) amplitude and other circuit parameters.
674 citations